CPD05-1N5399-CG [CENTRAL]
Rectifier Diode,;型号: | CPD05-1N5399-CG |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Rectifier Diode, |
文件: | 总2页 (文件大小:214K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TM
PROCESS CPD05
Central
General Purpose Rectifier
1 Amp Glass Passivated Rectifier Chip
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
GLASS PASSIVATED MESA
50 x 50 MILS
Die Thickness
9.5 MILS
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
34 x 34 MILS
Au - 5,000Å
Au - 2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
4,520
PRINCIPAL DEVICE TYPES
1N3611 thru 1N3614
1N4001 thru 1N4007
1N4245 thru 1N4249
1N5059 thru 1N5062
1N5391 thru 1N5399
1N5614 thru 1N5622
CMR1-02 Series
CMR1-02M Series
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (16-September 2003)
www.centralsemi.com
TM
PROCESS CPD05
Typical Electrical Characteristics
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (16-September 2003)
www.centralsemi.com
相关型号:
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