CPD06-1N5408-CG [CENTRAL]
Rectifier Diode,;
| 型号： | CPD06-1N5408-CG |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CPD06
Central
General Purpose Rectifier
3 Amp Glass Passivated Rectifier Chip
Semiconductor Corp.
PROCESS DETAILS
Process
GLASS PASSIVATED MESA
Die Size
Die Thickness
87 x 87 MILS
10.4 MILS
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
69.5 x 69.5 MILS
Au - 5,000Å
Au - 2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,490
PRINCIPAL DEVICE TYPES
1N5400 thru 1N5408
1N5550 thru 1N5554
1N5624 thru 1N5627
CMR3-02 Series
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (16- September 2003)
www.centralsemi.com
TM
PROCESS CPD06
Typical Electrical Characteristics
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (16-September 2003)
www.centralsemi.com
相关型号：
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