CPD80-CMDD2004-WS [CENTRAL]
Rectifier Diode,;
| 型号： | CPD80-CMDD2004-WS |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CPD80
Switch Diode
Central
Semiconductor Corp.
High Voltage Switching Diode Chip
PROCESS DETAILS
Process
Die Size
EPITAXIAL PLANAR
16 x 16 MILS
9.0 MILS
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
6.5 x 6.5 MILS
Al - 30,000Å
Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
45,050
PRINCIPAL DEVICE TYPES
CMPD2003
CMPD2004
1N3070
CMDD2003
CMDD2004
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (22-October 2003)
www.centralsemi.com
TM
PROCESS CPD80
Typical Electrical Characteristics
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (22-October 2003)
www.centralsemi.com
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