CPD80V-CMDD2004-WN [CENTRAL]
Rectifier Diode,;型号: | CPD80V-CMDD2004-WN |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Rectifier Diode, |
文件: | 总2页 (文件大小:395K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PROCESS CPD80V
Switching Diode
High Voltage Switching Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
16 x 16 MILS
7.1 MILS
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
6.5 x 6.5 MILS
Al - 30,000Å
Au-As - 13,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
64,704
PRINCIPAL DEVICE TYPES
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
BACKSIDE CATHODE
R3 (22-March 2010)
www.centralsemi.com
PROCESS CPD80V
Typical Electrical Characteristics
R3 (22-March 2010)
www.centralsemi.com
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