CS55D [CENTRAL]

SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS; 可控硅整流0.8 AMPS , 200和400伏
CS55D
型号: CS55D
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS
可控硅整流0.8 AMPS , 200和400伏

栅极 触发装置 可控硅整流器
文件: 总2页 (文件大小:126K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
CS55B  
CS55D  
SILICON CONTROLLED RECTIFIER  
0.8 AMPS, 200 AND 400 VOLTS  
TO-92 CASE  
DESCRIPTION  
The CENTRAL SEMICONDUCTOR CS55B series type are epoxy molded silicon controlled rectifiers designed  
for applications requiring a low gate sensitivity.  
MAXIMUM RATINGS (T =25°C unless otherwise noted)  
A
SYMBOL  
CS55B  
200  
CS55D  
400  
UNITS  
Peak Repetitive Off-State Voltage  
V
,V  
V
DRM RRM  
o
RMS On-State Current (T =60 C)  
C
I
0.8  
10  
A
A
T(RMS)  
Peak One Cycle Surge (t=10ms)  
I
TSM  
2
2
2
I t Value for Fusing (t=10ms)  
I t  
0.24  
2.0  
A s  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Storage Temperature  
P
W
GM  
P
0.1  
1.0  
W
G(AV)  
I
A
GM  
V
8.0  
V
GM  
T
T
-40 to +125  
-40 to +125  
200  
°C  
stg  
J
Junction Temperature  
°C  
Thermal Resistance  
Θ
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
100  
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
100  
MAX  
1.00  
UNITS  
I
I
I
I
,I  
Rated V  
Rated V  
,V  
, R =1KΩ  
DRM RRM GK  
µA  
DRM RRM  
DRM RRM GK  
,I  
,V , R =1K, T =125°C  
µA  
DRM RRM  
C
V =12V  
200  
5.00  
0.8  
µA  
mA  
V
GT  
H
D
R
=1KΩ  
GK  
V
V
V =12V  
GT  
D
I
=1.0A  
1.70  
V
TM  
TM  
dv/dt  
V =.67 x V  
, R =1K, T =125°C  
DRM GK  
25  
V/µs  
D
C
(SEE REVERSE SIDE)  
R1  
CS55B / CS55D  
SILICON CONTROLLED RECTIFIER  
RMS ON-STATE CURRENT vs. CASE  
TEMPERATURE  
MAXIMUM ON-STATE  
CHARACTERISTICS  
1
0.8  
0.6  
0.4  
0.2  
0
2
1.5  
1
TC=125°C  
0.5  
0
TC=25°C  
0
25  
50  
75  
100  
125  
150  
0
0.5  
1
1.5  
2
2.5  
TC, CASE TEMPERATURE (°C)  
VTM, ON-STATE VOLTAGE (V)  
TO-92 PACKAGE - MECHANICAL OUTLINE  
A
DIMENSIONS  
INCHES  
B
MILLIMETERS  
1 2 3  
SYMBOL MIN  
MAX  
MIN  
MAX  
5.21  
5.33  
-
A (DIA)  
0.175 0.205 4.45  
0.170 0.210 4.32  
B
C
D
E
F
G
H
I
0.500  
-
12.70  
0.016 0.022 0.41  
0.100  
0.56  
2.54  
C
0.050  
1.27  
0.125 0.165 3.18  
0.080 0.105 2.03  
0.015  
4.19  
2.67  
0.38  
D
TO-92 (REV: R1)  
E
F
Lead Code:  
1) Anode  
2) Gate  
3) Cathode  
G
H
I
R1  

相关型号:

CS55DLEADFREE

Silicon Controlled Rectifier, 0.8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-92, 3 PIN
CENTRAL

CS55DPBFREE

Silicon Controlled Rectifier,
CENTRAL

CS55DTIN/LEAD

Silicon Controlled Rectifier,
CENTRAL

CS55DZ

SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS
CENTRAL

CS55DZTIN/LEAD

Silicon Controlled Rectifier,
CENTRAL

CS56-24

Fast Recovery High Voltage Silicon Rectifiers
FUJI

CS56-B2GA221KANKA

Ceramic Capacitor, Ceramic
TDK

CS5651

High Performance Dual Channel Current Mode Controller with ENABLE
CHERRY

CS5651/D

High Performance Dual Channel Current Mode Controller with ENABLE
ETC

CS5651GDW16

High Performance Dual Channel Current Mode Controller with ENABLE
CHERRY

CS5651GDWR16

High Performance Dual Channel Current Mode Controller with ENABLE
CHERRY

CS5651GN16

High Performance Dual Channel Current Mode Controller with ENABLE
CHERRY