CS89MTR13PBFREE [CENTRAL]

Silicon Controlled Rectifier, 600V V(DRM),;
CS89MTR13PBFREE
型号: CS89MTR13PBFREE
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

Silicon Controlled Rectifier, 600V V(DRM),

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CS89M  
CS89N  
www.centralsemi.com  
SURFACE MOUNT  
0.8 AMP SILICON SCR  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CS89M series  
type is an Epoxy Molded Silicon Controlled Rectifier  
designed for sensing circuit applications and control  
systems.  
MARKING: FULL PART NUMBER  
SOT-89 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
SYMBOL  
CS89M  
CS89N UNITS  
C
Peak Repetitive Off-State Voltage  
V
V
600  
800  
V
A
DRM, RRM  
I
RMS On-State Current (T =60°C)  
C
0.8  
10  
T(RMS)  
Peak One Cycle Surge, t=10ms  
I2t Value for Fusing, t=10ms  
Peak Gate Power, tp=10μs  
Average Gate Power Dissipation  
Peak Gate Current, tp=10μs  
Peak Gate Voltage, tp=10μs  
Operating Junction Temperature  
Storage Temperature  
I
A
A2s  
TSM  
I2t  
0.24  
2.0  
0.1  
1.0  
8.0  
P
W
GM  
P
W
G(AV)  
I
A
GM  
V
V
GM  
T
-40 to +125  
-40 to +150  
104  
°C  
°C  
°C/W  
J
T
stg  
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
1.0  
UNITS  
μA  
I
I
I
I
I
Rated V  
Rated V  
V
R
=1KΩ  
DRM, RRM  
DRM, RRM, GK  
, V  
I
R
=1KΩ, T =125°C  
100  
200  
5.0  
μA  
DRM, RRM  
DRM RRM, GK  
C
V =12V  
20  
μA  
GT  
H
D
R
=1KΩ  
0.25  
0.61  
1.2  
mA  
V
GK  
V =12V  
V
V
0.8  
GT  
D
I
=1.0A, tp=380μs  
1.7  
V
TM  
TM  
V =2/3 V  
dv/dt  
R
=1KΩ, T =125°C  
25  
V/μs  
D
DRM, GK  
C
R1 (12-February 2010)  
CS89M  
CS89N  
SURFACE MOUNT  
0.8 AMP SILICON SCR  
600 THRU 800 VOLTS  
SOT-89 CASE - MECHANICAL OUTLINE  
(Bottom View)  
LEAD CODE:  
1) Gate  
2) Anode  
3) Cathode  
MARKING:  
FULL PART NUMBER  
R1 (12-February 2010)  
www.centralsemi.com  

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