CSDD-12MTR13PBFREE [CENTRAL]
Silicon Controlled Rectifier, 12000mA I(T), 600V V(DRM),;
| 型号： | CSDD-12MTR13PBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Silicon Controlled Rectifier, 12000mA I(T), 600V V(DRM), 栅 栅极 |
| 文件： | 总2页 (文件大小：399K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CSDD-12M
CSDD-12N
www.centralsemi.com
SURFACE MOUNT
SILICON CONTROLLED RECTIFIER
12 AMP, 600 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSDD-12M series
type is an Epoxy Molded Silicon Controlled Rectifier
designed for sensing circuit applications and control
systems.
MARKING: FULL PART NUMBER
D2PAK CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted) SYMBOL
CSDD-12M
CSDD-12N
UNITS
V
C
Peak Repetitive Off-State Voltage
V
V
600
800
DRM, RRM
RMS On-State Current (T =90°C)
C
I
12
110
60
A
T(RMS)
Peak One Cycle Surge, t=10ms
I2t Value for Fusing, t=10ms
Peak Gate Power, tp=10μs
I
A
A2s
TSM
I2t
P
40
W
GM
Average Gate Power Dissipation
Peak Forward Gate Current, tp=10μs
Peak Forward Gate Voltage, tp=10μs
Peak Reverse Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current
Operating Junction Temperature
Storage Temperature
P
1.0
4.0
16
W
G(AV)
I
A
FGM
V
V
FGM
V
5.0
100
V
RGM
di/dt
A/μs
°C
T
-40 to +125
-40 to +150
60
J
T
°C
stg
Thermal Resistance
Θ
°C/W
°C/W
JA
JC
Thermal Resistance
Θ
2.5
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
μA
I
I
I
I
I
Rated V V
DRM, RRM
10
3.0
15
DRM RRM
,
I
Rated V
V T =125°C
DRM RRM, C
,
mA
mA
mA
V
DRM RRM
,
V =12V, R =10Ω
3.5
8.7
GT
D
L
I =100mA
20
H
T
V
V
V =12V, R =10Ω
0.64
1.21
1.50
1.60
GT
TM
D
L
I
=24A, tp=380μs
2
V
TM
dv/dt
V = / V
T =125°C
200
V/μs
3
D
DRM
C
,
R2 (17-February 2010)
CSDD-12M
CSDD-12N
SURFACE MOUNT
SILICON CONTROLLED RECTIFIER
12 AMP, 600 THRU 800 VOLTS
D2PAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
3) Gate
4) Anode
MARKING:
FULL PART NUMBER
R2 (17-February 2010)
www.centralsemi.com
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