CTLDM7590_15 [CENTRAL]
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET;
| 型号： | CTLDM7590_15 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| 文件： | 总3页 (文件大小：1144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CTLDM7590
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM7590 is an
enhancement-mode P-channel MOSFET designed for
applications including high speed pulsed amplifiers and
drivers. This MOSFET has beneficially low r
low threshold voltage, and very low gate charge
characteristics.
,
DS(ON)
MARKING CODE: 2
FEATURES:
• ESD protection up to 2kV
• Power dissipation: 125mW
TLM3D6D8 CASE
APPLICATIONS:
• Load/Power Switches
• Low r
• Low threshold voltage
DS(ON)
• Boost/Buck Converters
• Battery Charging/Power Management
• Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm
TLMTM leadless surface mount package
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
UNITS
V
A
V
V
I
I
20
8.0
140
600
125
DS
GS
D
D
D
stg
V
mA
mA
mW
°C
P
T , T
-65 to +150
1000
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V, V =0
100
50
100
nA
GSSF GSSR
DSS
DSS
GS
DS
DS
GS
DS
=5.0V, V =0
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
nC
nC
nC
mS
pF
pF
pF
ns
ns
GS
=16V, V =0
GS
BV
V
=0, I =250μA
20
0.4
DSS
GS(th)
D
=V
I =250μA
=4.5V, I =100mA
1.0
5.0
7.0
10
DS GS, D
r
r
r
r
r
Q
Q
Q
4.0
5.5
8.0
11
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DD
DD
D
=2.5V, I =50mA
=1.8V, I =20mA
=1.5V, I =10mA
=1.2V, I =1.0mA
=10V, V =4.5V, I =100mA
=10V, V =4.5V, I =100mA
D
D
D
D
GS
GS
17
20
0.50
0.17
0.11
140
4.0
10
3.7
35
100
g(tot)
gs
D
D
D
=10V, V =4.5V, I =100mA
GS
gd
FS
rss
iss
oss
g
=5.0V, I =125mA
D
C
C
C
t
t
=15V, V =0, f=1.0MHz
GS
=15V, V =0, f=1.0MHz
GS
GS
=15V, V =0, f=1.0MHz
=10V, V =4.5V, I =200mA
GS D
=10V, V =4.5V, I =200mA
GS
on
off
D
R3 (21-September 2012)
CTLDM7590
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TLM3D6D8 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
(Bottom View)
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 2
R3 (21-September 2012)
www.centralsemi.com
CTLDM7590
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (21-September 2012)
www.centralsemi.com
相关型号：
CTLDM8120-M621HTR
Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1.50 X 2 MM, 0.40 MM HEIGHT, TLM621H, 6 PIN
CENTRAL
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