CTLDM8002A-M621HTRLEADFREE [CENTRAL]
Transistor;
| 型号： | CTLDM8002A-M621HTRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：421K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CTLDM8002A-M621H
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM8002A-
M621H is a very low profile (0.4mm) P-Channel
enhancement-mode MOSFET in a small, thermal
efficient, 1.5mm x 2mm TLM™ package.
MARKING CODE: CNC
FEATURES:
• Low r
• Low V
TLM621H CASE
DS(on)
DS(on)
• Low Threshold Voltage
• Fast Switching
APPLICATIONS:
• Load/Power Switches
• Logic Level Compatible
• Small, Very Low Profile, TLM™
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Drain-Source Voltage
V
50
50
DS
DG
GS
Drain-Gate Voltage
V
V
V
Gate-Source Voltage
20
V
Continuous Drain Current
I
280
mA
mA
A
D
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
I
280
S
I
1.5
DM
I
1.5
A
SM
P
1.6
W
D
T
T
-65 to +150
75
°C
J, stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
1.0
UNITS
nA
μA
μA
mA
V
I
I
I
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
=20V, V =0
GSSF GSSR
GS
DS
DS
GS
GS
DS
=50V, V =0
GS
DSS
=50V, V =0, T =125°C
500
DSS
GS
J
=10V, V =10V
500
50
D(ON)
DS
BV
=0, I =10μA
D
DSS
GS(th)
DS(ON)
DS(ON)
SD
V
V
V
V
=V
I =250μA
1.0
2.5
1.5
0.15
1.3
2.5
4.0
3.0
5.0
V
DS GS, D
=10V, I =500mA
V
GS
GS
GS
GS
GS
GS
GS
D
=5.0V, I =50mA
V
D
=0, I =115mA
V
S
r
r
r
r
=10V, I =500mA
Ω
DS(ON)
DS(ON)
DS(ON)
DS(ON)
D
=10V, I =500mA, T =125°C
Ω
D
J
=5.0V, I =50mA
Ω
D
=5.0V, I =50mA, T =125°C
Ω
D
J
R3 (17-February 2010)
CTLDM8002A-M621H
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
mS
pF
g
V
V
V
V
V
=10V, I =200mA
200
FS
DS
DS
DS
DS
DD
D
C
C
C
=25V, V =0, f=1.0MHz
7.0
70
15
rss
iss
GS
=25V, V =0, f=1.0MHz
GS
pF
=25V, V =0, f=1.0MHz
pF
oss
GS
t
, t
on off
=30V, V =10V, I =200mA,
GS
D
R =25Ω, R =150Ω
20
ns
G
L
TLM621H CASE - MECHANICAL OUTLINE
OPTIONAL MOUNTING PADS
(Dimensions in mm)
PIN CONFIGURATION
For standard mounting refer
to TLM621H Package Details
LEAD CODE:
1) Source
2) Drain
3) Drain
4) Drain
5) Drain
6) Gate
MARKING CODE: CNC
*Exposed pad P internally connected
to pins 2, 3, 4, and 5.
R3 (17-February 2010)
www.centralsemi.com
相关型号：
CTLDM8120-M621HTR
Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1.50 X 2 MM, 0.40 MM HEIGHT, TLM621H, 6 PIN
CENTRAL
CTLDM8120-M832DBK
Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE TLM832D, 8 PIN
CENTRAL
CTLDM8120-M832DS
Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TLM832DS, 8 PIN
CENTRAL
CTLDM8120-M832DTR
Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE TLM832D, 8 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明