CXT2222ATRPBFREE [CENTRAL]
Transistor,;
| 型号： | CXT2222ATRPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, 晶体 晶体管 |
| 文件： | 总2页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CXT2222A
Semiconductor Corp.
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT2222A
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for small signal
general purpose and switching applications.
SOT-89 CASE
MAXIMUM RATINGS (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
75
40
6.0
600
1.2
V
V
CBO
CEO
EBO
V
mA
W
I
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J stg
-65 to +150
104
°C
°C/W
Θ
JA
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
10
UNITS
nA
µA
nA
nA
V
I
I
I
I
V
V
V
V
=60V
CBO
CBO
EBO
CEV
CB
CB
EB
CE
=60V, T =125°C
A
10
=3.0V
10
=60V, V =3.0V
10
EB
BV
BV
BV
I =10µA
75
40
CBO
CEO
EBO
C
I =10mA
V
C
I =10µA
6.0
V
E
V
V
V
V
I =150mA, I =15mA
0.3
1.0
1.2
2.0
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =500mA, I =50mA
V
C
B
I =150mA, I =15mA
0.6
V
C
B
I =500mA, I =50mA
V
C
B
h
h
h
h
h
h
V
=10V, I =0.1mA
35
50
CE
CE
CE
CE
CE
CE
CE
CB
EB
C
V
V
V
V
V
V
V
V
=10V, I =1.0mA
C
FE
=10V, I =10mA
75
FE
C
=10V, I =150mA
100
50
300
FE
C
=1.0V, I =150mA
FE
C
=10V, I =500mA
40
FE
C
f
=20V, I =20mA, f=100MHz
300
MHz
pF
T
C
C
C
=10V, I =0, f=1.0MHz
8.0
25
ob
ib
E
=0.5V, I =0, f=1.0MHz
pF
C
R3 ( 19-December 2001)
TM
CXT2222A
Central
Semiconductor Corp.
SURFACE MOUNT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
TEST CONDITIONS
MIN
2.0
0.25
MAX
8.0
UNITS
kΩ
h
V
=10V, I =1.0mA, f=1.0kHz
ie
CE
C
h
V
V
V
V
V
V
V
V
V
V
V
V
V
=10V, I =10mA, f=1.0kHz
1.25
8.0
4.0
300
375
35
kΩ
ie
CE
CE
CE
CE
CE
CE
CE
CB
CE
CC
CC
CC
CC
C
-4
-4
h
h
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
x10
x10
re
re
fe
C
=10V, I =10mA, f=1.0kHz
C
=10V, I =1.0mA, f=1.0kHz
50
75
5.0
25
C
=10V, I =10mA, f=1.0kHz
fe
C
=10V, I =1.0mA, f=1.0kHz
µmhos
µmhos
ps
oe
oe
C
=10V, I =10mA, f=1.0kHz
200
150
4.0
10
C
rb’C
NF
=10V, I =20mA, f=31.8MHz
E
c
=10V, I =100µA, R =1.0kΩ, f=1.0kHz
dB
C
S
t
=30V, V =0.5, I =150mA, I =15mA
BE B1
ns
d
C
t
=30V, V =0.5, I =150mA, I =15mA
BE B1
25
ns
r
C
t
=30V, I =150mA, I =I =15mA
225
60
ns
s
C
B1 B2
t
=30V, I =150mA, I =I =15mA
B1 B2
ns
f
C
SOT-89 CASE - MECHANICAL OUTLINE
A
E
B
G
F
H
1
2
3
C
J
K
R3
L
M
BOTTOM VIEW
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
R3 ( 19-December 2001)
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