CXT3150LEADFREE [CENTRAL]
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3;
| 型号： | CXT3150LEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 开关 晶体管 |
| 文件： | 总2页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CXT3150
www.centralsemi.com
SURFACE MOUNT
NPN SILICON POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3150 type is
a NPN Silicon Power Transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high current, high gain,
fast switching applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
V
V
50
25
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
7.0
V
Continuous Collector Current
Continuous Base Current
Power Dissipation
I
5.0
A
C
I
1.0
A
B
P
1.2
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
104
°C
°C/W
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
V
V
=50V
1.0
1.0
µA
µA
V
CBO
EBO
CB
EB
=7.0V
BV
I =10mA
25
CEO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
V
V
V
V
I =3.0A, I =150mA
0.5
0.6
V
C
B
I =4.0A, I =200mA
V
C
B
I =3.0A, I =150mA
1.10
1.40
550
V
C
B
I =4.0A, I =200mA
V
C
B
h
h
h
V
=2.0V, I =500mA
250
150
50
BE
CE
CE
CE
CB
C
V
V
V
V
=2.0V, I =2.0A
FE
C
=2.0V, I =5.0A
FE
C
f
=6.0V, I =50mA, f=200MHz
150
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
50
ob
E
R6 (23-February 2010)
CXT3150
SURFACE MOUNT
NPN SILICON POWER TRANSISTOR
SOT-89 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
R6 (23-February 2010)
www.centralsemi.com
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