CZT7120BKPBFREE 概述
Transistor, 其他晶体管
CZT7120BKPBFREE 规格参数
是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 3 A | 配置: | Single |
最小直流电流增益 (hFE): | 100 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
标称过渡频率 (fT): | 8 MHz | Base Number Matches: | 1 |
CZT7120BKPBFREE 数据手册
通过下载CZT7120BKPBFREE数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载CZT7120
www.centralsemi.com
SURFACE MOUNT
PNP SILICON SWITCHING
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT7120 PNP
Switching Power Transistor, manufactured by the
epitaxial planar process, combines both power and
high speed switching characteristics in a SOT-223
Surface Mount Package. Typical applications include
drivers, DC-DC converters, and general fast switching
applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
V
V
120
70
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
7.0
V
Continuous Collector Current
Power Dissipation
I
3.0
A
C
P
2.0
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
°C
°C/W
J, stg
Θ
JA
62.5
ELECTRICAL CHARACTERISTICS: (T =25°C)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
µA
µA
V
I
I
V
V
=80V
1.0
1.0
CBO
CB
EB
=5.0V
EBO
BV
BV
BV
I =50µA
120
70
156
118
24
CBO
CEO
EBO
CE(SAT)
BE(ON)
FE
C
I =10mA
V
C
I =50µA
7.0
V
E
V
V
I =2.0A, I =200mA
295
0.93
210
162
65
500
1.1
mV
V
C
B
I =2.0A, V =1.0V
C
CE
h
h
h
V
=5.0V, I =10mA
100
100
40
CE
CE
CE
CE
C
V
V
V
=5.0V, I =500mA
300
FE
C
=5.0V, I =3.0A
FE
C
f
=10V, I =500mA, f=1.0MHz
8.0
MHz
T
C
R3 (1-March 2010)
CZT7120
SURFACE MOUNT
PNP SILICON SWITCHING
POWER TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R3 (1-March 2010)
www.centralsemi.com
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