CZTA96 [CENTRAL]
SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR; 表面安装PNP硅EXTREMELY高压晶体管
| 型号： | CZTA96 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CZTA96
Central
Semiconductor Corp.
SURFACE MOUNT
PNP SILICON
EXTREMELY HIGH VOLTAGE
TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA96 type
is a surface mount epoxy molded PNP silicon
planar epitaxial transistors designed for
extremely high voltage applications.
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
450
450
6.0
500
2.0
V
V
CBO
CEO
EBO
V
V
V
mA
W
I
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
T ,T
stg
-65 to +150
62.5
°C
°C/W
J
Thermal Resistance
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
CBO
EBO
TEST CONDITIONS
CB
MIN
TYP
MAX
UNITS
I
I
V
V
=400V
=4.0V
100
nA
100
nA
V
V
V
V
V
V
V
BE
B
B
B
V
V
V
V
h
h
h
h
I =100µA
450
450
6.0
500
490
9.7
VCBO
VCEO
VEBO
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
FE
C
I =1.0mA
C
I =10µA
E
I =1.0mA, I =0.1mA
0.20
0.30
0.50
1.0
C
C
B
B
B
B
I =10mA, I =1.0mA
I =50mA, I =5.0mA
0.15
C
I =10mA, I =1.0mA
C
V
=10V, I =1.0mA
40
50
45
25
20
CE
CE
CE
CE
CE
CB
EB
C
V
V
V
V
V
V
=10V, I =10mA
120
35
200
FE
FE
FE
C
C
=10V, I =50mA
=10V, I =100mA
C
f
=10V, I =10mA, f=10MHz
MHz
pF
pF
T
C
C
C
=20V, I =0, f=1.0MHz
7.0
130
ob
ib
E
=0.5V, I =0, f=1.0MHz
C
R1 ( 14-June 2001)
TM
CZTA96
Central
Semiconductor Corp.
SURFACE MOUNT
PNP SILICON
EXTREMELY HIGH VOLTAGE TRANSISTOR
SOT-223 - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
R1 ( 14-June 2001)
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