CES2301 [CET]

P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管


型号：	CES2301
厂家：	CHINO-EXCEL TECHNOLOGY
描述：	P-Channel Enhancement Mode Field Effect Transistor P沟道增强型场效应晶体管晶体晶体管场效应晶体管
文件：	总4页 (文件大小：109K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CES2301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-20V, -2.8A, R_DS(ON)= 100mΩ @V_GS= -4.5V.

R_DS(ON)= 150mΩ @V_GS= -2.5V.

High dense cell design for extremely low R_DS(ON)

Rugged and reliable.

Lead free product is acquired.

SOT-23 package.

SOT-23

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

-20

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

±8

-2.8

-10

I_DM

Maximum Power Dissipation

P_D

1.25

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

100

C/W

2005.February

http://www.cetsemi.com

7 - 6

CES2301

Electrical Characteristics T_A= 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics ^c

BV_DSS

I_DSS

V_GS= 0V, I_D= -250µA

V_DS= -20V, V_GS= 0V

V_GS= 8V, V_DS= 0V

V_GS= -8V, V_DS= 0V

-20

-1

µA

I_GSSF

IGSSR

100

-100

Gate Threshold Voltage

Static Drain-Source

V_GS(th)

R_DS(on)

g_FS

V_GS= V_DS, I_D= -250µA -0.45

V_GS= -4.5V, I_D= -2.8A

V_GS= -2.5V, I_D= -2.0A

V_DS= -5V, I_D= -2.8A

110

100

150

mΩ

On-Resistance

Forward Transconductance

Dynamic Characteristics ^d

Input Capacitance

C_iss

C_oss

C_rss

880

270

175

V_DS= -6V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^d

Turn-On Delay Time

t_d(on)

t_r

t_d(off)

t_f

V_DD= -6V, I_D= -1A,

V_GS= -4.5V, R_GEN= 6Ω

Turn-On Rise Time

Turn-Off Delay Time

1.5

2.1

Turn-Off Fall Time

Total Gate Charge

Q_g

14.5

V_DS= -6V, I_D= -2.8A,

V_GS= -4.5V

Gate-Source Charge

Q_gs

Q_gd

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current ^b

Drain-Source Diode Forward Voltage ^c

I_S

-0.75

-1.2

V_SD

V_GS= 0V, I_S= -0.75A

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 5 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

7 - 7

CES2301

-V_GS=4.5,4,3,V

-V_GS=2.5V

25 C

-V_GS=2.

-V_GS=1.

-55 C

T_J=125 C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-VDS, Drain-to-Source Voltage (V)

-VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

2.2

1.9

1.6

1.3

1.0

0.7

0.4

1200

1000

800

600

400

200

I_D=-2.8A

V_GS=-4.5V

iss

oss

rss

-100

-50

100

150

200

-VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_DS=V_GS

_GS=0V

I_D=-250µA

10¹

10⁰

10^-1

-50 -25

25 50 75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

TJ, Junction Temperature( C)

-VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

7 - 8

CES2301

10²

10¹

10⁰

10^-1

10^-2

V_DS=-6V

I_D=-2.8A

R_DS(ON)Limit

1ms

10ms

100ms

T_A=25 C

T_J=150 C

Single Pulse

10^-1

10⁰

10¹

10²

Qg, Total Gate Charge (nC)

-VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge

Figure 8. Maximum Safe

Operating Area

V^DD

toff

d(off)

d(on)

OUT

V^IN

90%

10%

90%

OUT

VGS

10%

INVERTED

R^GEN

90%

50%

10%

PULSE WIDTH

Figure 10. Switching Waveforms

Figure 9. Switching Test Circuit

10⁰

D=0.5

0.2

10^-1

0.1

0.05

0.02

PDM

0.01

10^-2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

Single Pulse

10^-3

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve

7 - 9

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