CEU01N6 [CET]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管


型号：	CEU01N6
厂家：	CHINO-EXCEL TECHNOLOGY
描述：	N-Channel Enhancement Mode Field Effect Transistor N沟道增强型网络场效晶体管晶体晶体管
文件：	总4页 (文件大小：85K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CED01N6/CEU01N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

650V, 0.9A, R_DS(ON)= 15 Ω @V_GS= 10V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

650

Gate-Source Voltage

±30

0.9

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

3.6

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

Single Pulsed Avalanche Energy ^d

P_D

0.25

W/ C

E_AS

I_AS

Avalanche Current

0.8

Operating and Store Temperature Range

T_J,T_stg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 1. 2005.Decemcer

http://www.cetsemi.com

CED01N6/CEU01N6

Electrical Characteristics T = 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 600V, V_GS= 0V

V_GS= 30V, V_DS= 0V

V_GS= -30V, V_DS= 0V

650

µA

I_GSSF

IGSSR

-10

Gate Threshold Voltage

Static Drain-Source

V_GS(th)

R_DS(on)

V_GS= V_DS, I_D= 250µA

VGS = 10V, ID = 0.4A

Ω

On-Resistance

Dynamic Characteristics ^c

Forward Transconductance

Input Capacitance

g_FS

V_DS= 20V, I_D= 0.4A

0.5

136

C_iss

C_oss

C_rss

V_DS= 25V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^c

Turn-On Delay Time

t_d(on)

t_r

t_d(off)

t_f

V_DD= 300V, I_D= 0.4A,

V_GS= 10V, R_GEN= 4.7Ω

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

V_DS= 480V, I_D= 0.8A,

V_GS= 10V

Gate-Source Charge

Q_gs

Q_gd

1.0

4.4

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage ^b

I_S

0.8

1.6

V_SD

V_GS= 0V, I_S= 0.8A

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.L = 190mH, I = 0.8A, V = 50V, R = 25Ω, Starting T = 25 C .

CED01N6/CEU01N6

2.5

1.5

1.2

0.9

0.6

0.3

0.0

25 C

V_GS=10,9,8V

2.0

1.5

1.0

0.5

_GS=6V

_GS=5V

-55 C

T_J=125 C

0.0

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

240

200

160

120

I_D=0.4A

V_GS=10V

iss

oss

rss

-100

-50

100

150

200

VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_DS=V_GS

I_D=250µA

_GS=0V

10⁰

10^-1

10^-2

-50 -25

25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

TJ, Junction Temperature( C)

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

CED01N6/CEU01N6

V_DS=480V

I_D=0.8A

R_DS(ON)Limit

100ms

1ms

10ms

10⁰

10^-1

T_C=25 C

T_J=150 C

Single Pulse

10^-2

10⁰

10¹

10²

10³

Qg, Total Gate Charge (nC)

VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge

Figure 8. Maximum Safe

Operating Area

V^DD

toff

d(off)

d(on)

OUT

V^IN

90%

10%

90%

OUT

VGS

10%

INVERTED

R^GEN

90%

50%

10%

PULSE WIDTH

Figure 10. Switching Waveforms

Figure 9. Switching Test Circuit

10⁰

D=0.5

0.2

PDM

0.1

10^-1

0.05

0.02

0.01

1. RθJC (t)=r (t) * RθJC

2. RθJC=See Datasheet

3. TJM-TC = P* RθJC (t)

4. Duty Cycle, D=t1/t2

Single Pulse

10^-2

10^-1

10⁰

10¹

10²

10³

10⁴

Square Wave Pulse Duration (msec)

Figure 11. Normalized Thermal Transient Impedance Curve

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