RS1503 [CHENG-YI]
SINGLE-PHASE SILICON BRIDGE; 单相硅桥
| 型号： | RS1503 |
| 厂家： | 
CHENG-YI ELECTRONIC CO., LTD. |
| 描述： | SINGLE-PHASE SILICON BRIDGE |
| 文件： | 总2页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RS1501 thru RS1507
SSIINNGGLLEE--PPHHAASSEE SSIILLIICCOONN BBRRIIDDGGEE
CCHHEENNGG--YYII
ELECTRONIC
VOLTAGE RANGE
50 TO 1000 VOLTS
CURRENT
15.0 Amperes
FEATURES
Low leakage
Low forward voltage
Mounting Position: Any
Surge overload rating:250 amperes peak
Siliver-plated copper leads
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0
(At TA=25 C unless otherwise noted)
MAXIMUM RATINGS
RS1501 RS1502 RS1503 RS1504 RS1505 RS1506 RS1507
UNITS
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
100
1000
Maximum Average Forward
IO
15
A
0
Output Current at @ T =50 C
C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
IFSM
250
A
0
T
J
Operating and Storage Temperature Range
TSTG
-55 to +150
C
Maximum Forward Voltage drop per element of 7.5A DC
V
F
1.05
10
V
A
0
=25 C
T
@
@
A
Maximum Reverse Current at Rated
DC Blocking Voltage per element
IR
0
=100 C
T
A
0.2
mA
RS1501 thru RS1507
SSIINNGGLLEE PPHHAASSEE GGLLAASSSS BBRRIIDDGGEE
CCHHEENNGG--YYII
ELECTRONIC
RATING AND CHARACTERISTICS CURVES
RS1501 THRU RS1507
Fig. 1 - MAXIMUM FORWARD SURGE CURRENT
Fig. 4 - MAXIMUM NON-REPETITIVE SURGE CURRENT
250
200
15
0
T =150C
J
150
single half sine-wave
12
(JEDEC Method)
100
9
50
6
60Hz RESISTIVE OR
INDUCTIVE LOAD
10
3
25
50
75
100
125
150
1
2
5
10
20
50
100
0
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
Fig. 2 - TYPICAL FORWARD
CHARACTERISTICS
10
0
T =150C
J
Fig. 5 - TYPICAL REVERSE
1.0
CHARACTERISTICS
1000
0
T =25 C
J
0
T =150C
J
0.1
0
T =125C
J
.001
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
0
T =100C
J
10
Fig. 3 - TYPICAL JUNCTION CAPACITANCE
100
0
T =25 C
J
1.0
f=1.0MHz
0
T =25 C
J
50
.01
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
10
1
4
10
100
REVERSE VOLTAGE, VOLTS
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