2SB1386PTPGP [CHENMKO]
Transistor,;
| 型号： | 2SB1386PTPGP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, |
| 文件： | 总3页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
2SB1386PT
SMALL FLAT
PNP Epitaxial Transistor
VOLTAGE 20 Volts CURRENT 5 Amperes
APPLICATION
* Power driver and Strobe Flash .
FEATURE
* Small flat package. (SC-62/SOT-89)
SC-62/SOT-89
* Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)
* PC= 2.0W (mounted on ceramic substrate).
* High saturation current capability.
4.6MAX.
1.7MAX.
1.6MAX.
0.4+0.05
MARKING
* hFE Classification P : P86
Q : Q86
+0.08
0.45-0.05
+0.08
+0.08
0.40-0.05
0.40-0.05
R: R86
1.50+0.1
1.50+0.1
1
2
3
1 Base
2 Collector ( Heat Sink )
3 Emitter
CIRCUIT
1
B
2
C
3
E
Dimensions in millimeters
SC-62/SOT-89
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
Open Emitter
SYMBOL
VCBO
UNITS
Volts
2SB1386PT
Collector - Base Voltage
-30
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Open Base
VCEO
VEBO
IC
-20
-6
Volts
Volts
Amps
Open Collector
-5
Peak Collector Current
Total Power Dissipation
Storage Temperature
ICM
-10
2.0
Amps
W
TA ≤ 25OC; Note 1
PTOT
TSTG
-55 to +150
oC
Junction Temperature
TJ
+150
oC
oC
Operating Ambient Temperature
TAMB
-55 to +150
2004-11
Note
1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm.
RATING CHARACTERISTIC CURVES ( 2SB1386PT )
CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
CONDITION
IC=-50uA
SYMBOL
MIN.
TYPE
-
MAX.
-
UNITS
Collector-Base breakdown voltage
BVCBO
-30
Volts
BVCEO
BVEBO
-
-
-
-
Volts
Volts
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
IC=-1mA
IE=-50uA
-20
-6
-
Collector Cut-off Current
Emitter Cut-off Current
IE=0; VCB=-200V
IC=0; VEB=-5V
ICBO
ICEO
-
-
-0.5
-0.5
uA
uA
-
VCE=-2V; Note 1
IC=-0.5A
82
-
390
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Output Capacitance
IC=-4A; IB=-0.1A
VCEsat
CC
-
-
-
-0.35
60
-1.0
Volts
pF
IE=ie=0; VCB=-20V;
f=1MHz
-
-
IE=-0.05A; VCE=-6.0V;
f=100MHz
Transition Frequency
fT
120
MHz
Note :
1. hFE(2) Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390.
RATING CHARACTERISTIC CURVES ( 2SB1386PT )
Fig.3 DC current gain vs.
collector current ( I )
Fig.1 Grounded emitter propagation
Fig.2 Grounded emitter output
characteristics
characteristics
-5
-4
-3
-2
5000
-10
-5
o
o
Ta=25 C
-50mA
-45mA
Ta=25 C
V
CE = -2V
-30mA
-25mA
-20mA
-15mA
2000
1000
500
o
-2
-1
Ta=100 C
o
25 C
o
-25 C
V
CE=-5V
-0.5
-10mA
-40mA
-35mA
-0.2
-0.1
200
100
50
-2V
-1V
-0.05
-5mA
-0.02
-0.01
-5m
20
-1
0
10
5
-1m
-2m
-1m
I
B
0mA
-0.01
-0.1
-1
-10
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
BASE TO EMITTER VOLTAGE : VBE (V)
0
-0.4
-0.8
-1.2
-1.6
-2.0
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.4 DC current gain vs.
collector current ( II )
Fig.5 DC current gain vs.
collector current ( III )
Fig.6 Collector-emitter saturation voltage
vs. collector current ( I )
5000
5000
-2
o
V
CE = -1V
VCE=-2V
Ta=25 C
2000
1000
500
2000
1000
-1
o
o
Ta=100 C
Ta=100 C
o
o
25 C
25 C
-0.5
o
o
-25 C
-25 C
500
-0.2
-0.1
200
100
50
200
100
50
-0.05
I
C/IB=50
20
20
40
-0.02
-0.01
30
10
10
5
-1m
10
5
-1m
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
-10
-2m
-0.01
-0.1
-1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I (A)
COLLECTOR CURRENT : I
C
(A)
Fig.7 Collector-emitter
saturation voltage vs.
collector current ( II )
Fig.8 Collector-emitter
saturation voltage vs.
collector current ( III )
Fig.9 Collector-emitter
saturation voltage vs.
collector current ( IV )
-2
-1
-2
-1
IC/IB=10
I
C/IB=30
IC/IB=40
-0.5
-0.5
o
Ta=100 C
o
Ta=100 C
o
o
Ta=100 C
25 C
o
25 C
o
o
-0.2
-0.1
-0.2
-0.1
25 C
-25 C
o
-25 C
o
-25 C
-0.05
-0.05
-0.02
-0.01
-0.02
-0.01
-2m
-0.01
-0.1
-1
-10
-2m
-0.01
-0.1
-1
-10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
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