2SK3541GP [CHENMKO]
Transistor,;
| 型号： | 2SK3541GP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, 晶体 晶体管 |
| 文件： | 总4页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
2SK3541PT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 100 mAmpere
APPLICATION
* Interfacing, switching (30V, 100mA)
FEATURE
SOT-723
* Small surface mounting type. (SOT-723)
* Low on-resistance
* Fast switching speed
* Easily designed drive circuits
* Easy to parallel
0.22
(02).4
(3)
1.2
0.8
0.4
(1)
0.32
CONSTRUCTION
0.22
0.8
Silicon N-Channel MOSFET
0.5
0.13
0.5±0.5
0.15Max.
D
3
CIRCUIT
G
1
SOT-723
Dimensions in millimeters
S 2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
2SK3541PT
Symbol
Parameter
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
30
V
VGSS
±20
V
mA
mA
mA
mA
100
400
100
400
ID
Drain Current - Continuous
- Pulsed (Note1)
Reverse Drain Current - Continuous
- Pulsed (Note1)
IDR
PD
Power Dissipation (Note2)
150
mW
TJ
Operating Temperature Range
Storage Temperature Range
150
°C
TSTG
-55 to 150
°C
Note:
2004-06
1. Pw < 10uA , Duty cycle < 1%
2. With each pin mounted on the recommended land
RATING CHARACTERISTIC CURVES ( 2SK3541PT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 10µA
30
V
Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V
1
0.5
1
µA
mA
µA
µA
TC=125°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
-1
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS = 3V, ID = 100 µA
Static Drain-Source On-Resistance VGS = 4.0 V, ID = 10 mA
VGS = 2.5 V, ID = 1.0 mA
0.8
1.5
8.0
13
V
RDS(ON)
5.0
Ω
7.0
gFS
Forward Transconductance
VDS = 3.0 V, ID = 10 mA
20
mS
DYNAMIC CHARACTERISTICS
pF
Ciss
Coss
Crss
ton
Input Capacitance
VDS = 5.0 V, VGS = 0 V,
f = 1.0 MHz
13
9
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
4
VDD = 5.0 V, RL = 500
ID = 10 mA, VGS = 5.0 V,
RGEN = 10
Ω,
15
nS
nS
tr
35
80
80
Ω
toff
tf
Turn-Off Time
VDD = 5.0 V, RL = 500
ID = 10 mA, VGS = 5.0 V,
RGEN = 10
Ω,
Ω
RATING CHARACTERISTIC CURVES ( 2SK3541PT )
Typical Electrical Characteristics
FIG. 1 TYPICAL TRANSFER CHARACTERISTICS
FIG. 2 REVERSE DRAIN CURRENT V.S
SOURCE-DRAIN VOLTAGE
200m
100m
200m
ꢀ
V
DS=3V
V
GS=0V
Pulsed
Pulsed
100m
50m
50m
20m
10m
5m
20m
Ta=125°C
10m
5m
75°C
25°C
−25°C
2m
1m
2m
1m
Ta=125°C
75°C
25°C
−25°C
0.5m
0.5m
0.2m
0.1m
0.2m
0.1m
3
0
1
2
4
0
0.5
1
1.5
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
FIG. 3 GATE THRESHOLD VOLTAGE V.S
FIG. 4 FROWARD TRANSFER ADMITTANCE V.S
CHANNEL TEMPERATURE
DRAIN CURRENT
2
1.5
1
0.5
ꢀ
ꢀ
V
DS=3V
V
DS=3V
I
D
=0.1mA
Pulsed
0.2
Pulsed
Ta=−25°C
25°C
0.1
75°C
0.05
125°C
0.02
0.01
0.005
0.5
0
0.002
0.001
0.0001 0.0002
0.0005 0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
−50 −25
0
25
50
75 100 125 150
DRAIN CURRENT : ID (A)
CHANNEL TEMPERATURE : Tch (°C)
RATING CHARACTERISTIC CURVES ( 2SK3541PT )
Typical Electrical Characteristics (continued)
FIG. 5 STATIC DRAIN-SOURCE ON-STATE
RESISTANCE V.S DRAIN CURRENT
FIG. 6 STATIC DRAIN-SOURCE ON-STATE
RESISTANCE V.S DRAIN CURRENT
50
50
V
GS=4V
V
GS=2.5V
Pulsed
Pulsed
Ta=125°C
75°C
Ta=125°C
75°C
20
10
5
20
10
5
25°C
−25°C
25°C
−25°C
2
2
1
1
0.5
0.001 0.002
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
DRAIN CURRENT : ID (A)
相关型号：
©2020 ICPDF网 联系我们和版权申明