BAW56DPT [CHENMKO]

FAST SWITCHING DIODE ARRAY VOLTAGE 75 Volts CURRENT 150 mAmpere; 快速开关二极管阵列电压75伏特电流150 mAmpere


型号：	BAW56DPT
厂家：	CHENMKO ENTERPRISE CO. LTD.
描述：	FAST SWITCHING DIODE ARRAY VOLTAGE 75 Volts CURRENT 150 mAmpere 快速开关二极管阵列电压75伏特电流150 mAmpere 二极管开关
文件：	总2页 (文件大小：68K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CHENMKO ENTERPRISE CO.,LTD

BAW56DPT

SURFACE MOUNT

FAST SWITCHING DIODE ARRAY

VOLTAGE 75 Volts CURRENT 150 mAmpere

APPLICATION

* Ultra high speed switching

* For general purpose switching application

SC-88/SOT-363

FEATURE

* Small surface mounting type. (SC-88/SOT-363)

* High speed. (TRR=1.5nSec Typ.)

* Suitable for high packing density.

(1)

(6)

(4)

* Maximum total power disspation is 200mW.

* Peak forward current is 300mA.

0.65

2.0~2.2

0.65

1.2~1.4

CONSTRUCTION

(3)

0.15~0.35

* Silicon epitaxial planar

1.15~1.35

MARKING

* DC

0.08~0.15

0.8~1.1

0~0.1

0.1 Min.

2.15~2.45

CIRCUIT

SC-88/SOT-363

Dimensions in millimeters

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

SYMBOL

BAW56DPT

100

UNITS

Maximum Non-Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRM

VRMS

Volts

Maximum Repetitive Peak Reverse and DC Blocking Voltage

Maximum Average Forward Rectified Current

VRRM, VDC

Volts

150

mAmps

@t=1.0uSec

Non-Repetitive Peak Forward Surge Current

@t=1.0Sec

2.0

1.0

IFSM

Amps

Typical Junction Capacitance between Terminal (Note 1)

Maximum Reverse Recovery Time (Note 2)

2.0

4.0

nSec

^oC/W

^oC

TRR

Thermal Resistance Junction to Ambient (Note 3)

Maximum Operating and Storage Temperature Range

625

TJ,TSTG

-65 to +150

ELECTRICAL CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )

CHARACTERISTICS

SYMBOL

UNITS

Volts

BAW56DPT

@IF=1.0mA

@IF=10mA

@IF=50mA

@IF=150mA

0.715

0.855

1.00

Maximum Instantaneous Forward Voltage

1.25

@VR=20V

@VR=75V

@VR=25V, TJ=150 C

2.5

nAmps

uAmps

Maximum Average Reverse Current

@VR=75V, TJ=150 C

2002-9

NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts.

2. Measured at applied froward current of 10mA and reverse current of 10mA.

3. Device mounted on FR-4 by 1 inch X 0.85 inch X 0.062 inch

4. ESD sensitive product handling required.

RATING CHARACTERISTIC CURVES ( BAW56DPT )

FIG. 1 - TYPICAL FORWARD CURRENT

DERAING CURVE

FIG. 2 - FORWARD CHARACTERISTICS

125

100

500

200

100

Ta=85^o

50^oC

25^oC

0^oC

30^oC

100

125

150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

AMBIENT TEMPERATURE, (^o

)

FORWARD VOLTAGE, (V)

FIG. 4 - REVERSE CHARACTERISTICS

FIG. 3 - TYPICAL JUNCTION CAPACITANCE

10u

f=1MHz

Ta=100^o

75^oC

50^oC

25^oC

100

0^oC

25^oC

0.1

REVERSE VOLTAGE, (V)

FIG. 5 - REVERSE RECOVERY TIME

FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT

0.01µF

D.U.T.

VR=6V

PULSE GENERATOR

OUTPUT 50

SAMPLING

OSCILLOSCOPE

FORWARD CURRENT, (mA)

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