CHM6336JPT [CHENMKO]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CHM6336JPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总3页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM6336JPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts CURRENT 5.8 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
(
)
4.06 0.160
* Super high dense cell design for extremely low RDS(ON).
(
)
3.70 0.146
* High power and current handing capability.
* Lead free product is acquired.
8
(
)
.51 0.020
1
4
(0.012)
.10
(
)
5.00 0.197
CONSTRUCTION
(
)
4.69 0.185
( )BSC
1.27 0.05
* N-Channel Enhancement
5
(0.069)
1.75
(
)
.25 0.010
(
)
1.35 0.053
(0.007)
.17
(
)
.25 0.010
(0.002)
.05
(
)
6.20 0.244
D
S
D
S
D
D
G
(
)
5.80 0.228
8
1
5
4
CIRCUIT
Dimensions in millimeters
SO-8
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM6336JPT
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
60
V
VGSS
ID
±20
V
Maximum Drain Current - Continuous
A
A
5.8
24
IDM
PD
TJ
Maximum Drain Current - Pulsed
2500
mW
°C
Maximum Power Dissipation
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
50
°C/W
2007-11
RATING CHARACTERISTIC ( CHM6336JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= 250 µA
GS = 0 V
60
DSS
I
Zero Gate Voltage Drain Current
VDS = 60 V,
V
1
µ
A
GSSF
I
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
VGS(th)
1
3
41
55
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
33
V
V
GS=10V, I
D
=5.8A
=4.7A
RDS(ON)
m
Ω
Static Drain-Source On-Resistance
Forward Transconductance
GS=4.5V, I
D
41
gFS
S
11
VDS =15V, ID = 5.8.A
Dynamic Characteristics
750
Ciss
Coss
Crss
Input Capacitance
VDS = 30V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
105
65
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
22
3.0
4.5
15
4
29
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=30V, I
GS=10V
D
=5.8A
nC
nS
Qgs
gd
Q
ton
tr
Turn-On Time
Rise Time
30
15
80
15
VDD
V
= 30
,
D
I = 4.4A
GS
V
= 10 V
toff
tf
Turn-Off Time
Fall Time
37
5
Ω
GEN= 1
R
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
(Note 1)
I
5.8
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = 2A
GS
(Note 2)
VSD
1.2
V
V
= 0 V
RATING CHARACTERISTIC CURVES ( CHM6336JPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
10
20
16
GS=
V
10,8,6,3V
8
6
12
8
4
4
2
0
J=125°C
T
J=-55°C
T
J=25°C
T
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS , GATE-TO-SOURCE VOLTAGE (V)
4.0
5.0
0
1.0
2.0
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Gate Charge
10
2.2
1.9
VGS=10V
VDS=30V
ID=5.8A
ID=5.8A
8
6
1.6
1.3
1.0
4
2
0.7
0.4
0
0
4
8
12
16
20
24
-100
-50
0
50
100
150
200
Qg , TOTAL GATE CHARGE (nC)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Gate Threshold Variation with
Temperature
1.3
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
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