CHN11PT [CHENMKO]
SWITCHING DIODE; 开关二极管
| 型号： | CHN11PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | SWITCHING DIODE |
| 文件： | 总2页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHN11PT
SURFACE MOUNT
SWITCHING DIODE
VOLTAGE 80 Volts CURRENT 100 mAmpere
APPLICATION
* Ultra high speed switching
FEATURE
SC-74/SOT-457
* Small surface mounting type. (SC-74/SOT-457)
* Multiple diodes in one small surface mount package.
* Suitable for high packing density.
* Maximum total power disspation is 150*2 mW.
* Peak forward current is 300mA.
(1)
(3)
(6)
(4)
0.95
1.7~2.1
2.7~3.1
0.95
CONSTRUCTION
0.25~0.5
* Silicon epitaxial planar
1.4~1.8
MARKING
0.08~0.2
0.935~1.3
* D4P
0~0.15
0.3~0.6
2.6~3.0
(6)
(1)
(4)
(3)
CIRCUIT
SC-74/SOT-457
Dimensions in millimeters
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
VRRM
VRMS
VDC
CHN11PT
UNITS
Volts
Volts
Volts
mAmps
Amps
pF
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
80
56
Maximum DC Blocking Voltage
80
100
4.0
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 1uSec.
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note 2)
Maximum Operating Temperature Range
IO
IFSM
CJ
TRR
TJ
3.5
4.0
nSec
oC
+150
oC
Storage Temperature Range
TSTG
-55 to +150
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
CHN11PT
1.20
UNITS
Volts
Maximum Instantaneous Forward Voltage at IF= 100mA
Maximum Average Reverse Current at VR= 70V
VF
IR
0.1
uAmps
2003-5
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 6.0 volts.
2. Measured at applied froward current of 5mA and reverse voltage of 6.0 volts.
3. ESD sensitive product handling required.
RATING CHARACTERISTIC CURVES ( CHN11PT )
FIG. 1 - POWER DERAING CURVE
FIG. 2 - FORWARD CHARACTERISTICS
125
100
75
50
25
0
50
20
10
5
Ta=85o
C
2
1
50oC
25oC
0oC
-
30oC
0.5
0.2
0.1
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
AMBIENT TEMPERATURE, (o
C
)
FORWARD VOLTAGE, (V)
FIG. 4 - REVERSE CHARACTERISTICS
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
Ta=100o
C
1000
100
10
f=1MHz
75oC
50oC
25oC
4
2
0
0oC
1
-
25oC
0.1
0.01
0
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
REVERSE VOLTAGE, (V)
REVERSE VOLTAGE, (V)
FIG. 5 - REVERSE RECOVERY TIME
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
10
9
8
7
6
5
4
3
2
1
0
0.01µF
D.U.T.
VR=6V
5K
PULSE GENERATOR
OUTPUT 50
SAMPLING
OSCILLOSCOPE
50
0
1
2
3
4
5
6
7
8
9
10
FORWARD CURRENT, (mA)
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