CHT4401SGP [CHENMKO]
Transistor,;
| 型号： | CHT4401SGP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, |
| 文件： | 总4页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT4401SGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.6 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
* Small surface mounting type. (SC-88/SOT-363)
* Low current (Max.=600mA).
SC-88/SOT-363
* Suitable for high packing density.
* Low voltage (Max.=40V) .
(1)
(6)
* High saturation current capability.
* Voltage controlled small signal switch.
0.65
0.65
1.2~1.4
2.0~2.2
CONSTRUCTION
(3)
(4)
0.15~0.35
* NPN Switching Transistor
1.15~1.35
MARKING
0.08~0.15
0.8~1.1
0~0.1
* DS
0.1 Min.
6
1
4
3
2.15~2.45
CIRCUIT
SC-88/SOT-363
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO
MIN.
MAX.
60
UNIT
−
−
V
V
V
open emitter
collector-base voltage
VCEO
VEBO
open base
collector-emitter voltage
40
6
open collector
−
−
−
emitter-base voltage
collector current DC
mA
IC
600
Ptot
total po
wer dissipation
Tamb ≤ 25 °C; note1
200
mW
Tstg
Tj
storage temperature
−55
−
+150
150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−55
+150
2004-11
Note
1. Transistor mounted on an FR4 printed-circuit board.
RATING CHARACTERISTIC CURVES ( CHT4401SGP )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
°
C/W
thermal resistance from junction to ambient
200
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 60 V
MIN.
MAX.
50
UNIT
−
−
nA
nA
IC = 0; VEB = 6 V
VCE = 1 V; note 1
50
20
−
−
−
I
I
I
C = 0.1 mA
C = 1 mA
C = 10 mA
40
80
300
100
IC = 1 50 mA
VCE
2
V;note 2
mA
=
−
I
40
C = 500
VCEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 1 5 mA
IC = 500 mA; IB = 5 0 mA
400
mV
mV
−
−
750
950
1200
6.5
VBEsat
base-emitter saturation voltage IC = 150 mA; IB = 15 mA
C = 500 mA; IB = 5 0 mA
750
mV
mV
pF
−
I
Cc
Ce
collector capacitance
emitter capacitance
IE = ie = 0; VCB = 5 V; f = 1 4 0 K Hz
−
−
IC = ic = 0; VBE = 500 mV;
f = 140KHz
pF
30
fT
transition frequency
IC = 20 mA; VCE = 10 V;
f = 100 MHz
250
−
MHz
Switching times (between 10% and 90% levels);
ton
td
turn-on time
delay time
rise time
ICon = 150 mA; IBon = 15 mA;
IBoff = −1 5 mA
−
−
−
−
−
−
35
ns
ns
ns
ns
ns
ns
15
tr
20
toff
ts
turn-off time
storage time
fall time
250
200
60
tf
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( CHT4401SGP )
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
500
400
300
200
100
0
0.4
0.3
0.2
0.1
V
= 5V
CE
β = 10
125 °C
25 °C
125 °C
25 °C
- 40 °C
- 40 °C
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
β = 10
V
= 5V
1
CE
- 40 °C
25 °C
- 40 °C
0.8
0.6
0.4
25 °C
125 °C
125 °C
1
10
100
500
0.1
1
10
25
I
C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
500
100
20
16
12
8
f = 1 MHz
V
= 40V
CB
10
1
C
0.1
C
ob
4
25
50
75
100
125
150
0.1
1
10
100
TA - AMBIENT TEMPERATURE (°C)
REVERSE BIAS VOLTAGE (V)
RATING CHARACTERISTIC CURVES ( CHT4401SGP )
Turn On and Turn Off Times
Switching Times
vs Collector Current
vs Collector Current
400
320
240
160
80
400
320
240
160
80
I
I
c
c
IB1= IB2
=
IB1= IB2
=
10
10
V
= 25 V
V
= 25 V
cc
cc
t
s
t
r
t
off
t
f
t
on
t
d
0
0
10
100
1000
10
100
1000
I
- COLLECTOR CURRENT (mA)
I
- COLLECTOR CURRENT (mA)
C
C
Power Dissipation vs
Ambient Temperature
1
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
相关型号：
©2020 ICPDF网 联系我们和版权申明