CHT807N1PT [CHENMKO]
PNP Muti-Chip General Purpose Amplifier; PNP穆蒂芯片通用放大器
| 型号： | CHT807N1PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | PNP Muti-Chip General Purpose Amplifier |
| 文件： | 总4页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT807N1PT
SURFACE MOUNT
PNP Muti-Chip General Purpose Amplifier
VOLTAGE 45 Volts CURRENT 0.5 Ampere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
* Surface mount package. (FBPT-923)
* High current gain.
FBPT-923
0.5±0.05
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
1.0±0.05
0.37(REF.)
0.25(REF.)
CONSTRUCTION
1.0±0.05
* PNP Silicon Transistor
* Epitaxial planner type
0.05±0.04
0.68±0.05
0.42±0.05
0.3±0.05
(3)
C
CIRCUIT
(1)
B
0.26±0.05
(2)
E
Dimensions in millimeters
FBPT-923
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
-45
UNIT
open emitter
open base
−
V
VCEO
VCES
VEBO
IC
collector-emitter voltage
collector-base voltage
emitter-base voltage
collector current (DC)
peak collector current
peak emitter current
−
-45
-5
V
V
open emitter
open collector
−
−
−5
V
−
-500
mA
mA
mA
mW
°C
ICM
−
-1000
-1000
100
IEM
−
Ptot
Tstg
Tj
total power dissipation
storage temperature
T
amb ≤ 25 °C; note 1
−
−65
−
+150
150
junction temperature
operating ambient temperature
°C
Tamb
−65
+150
°C
2006-07
Note
1. Transistor mounted on an FR4 printed-circuit board.
RATING CHARACTERISTIC ( CHT807N1PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
VALUE
UNIT
°
C/W
thermal resistance from junction to ambient
note 1
430
1. Device mounted on ceramic substrate 0.7mm ; 2.5cm2ares.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICES
PARAMETER
CONDITIONS
MIN.
MAX.
-100
UNIT
−
−
−
nA
uA
nA
collector-emitter cut-off current VCE = 45 V
VCB = 25 V; Tj = 150 O
C
-50
-100
IEBO
emitter-base cut-off current
V
EB = - 4 V
VCEsat
−
volt
=-
collector-emitter saturation
IC 500 mA ; IB = -50 mA
IC = -100 mA; VCE= -1.0V
IC = -300 mA; VCE= -1.0V
-700
600
−
mV
100
60
I
hFE
DC current gain
V
VBE
base-emitter voltage
-1.2
IC = -300 mA;
VCE= -1.0V
CCBO
fT
collector-base capacitance
VCB =10V ; f = 1 MHz
12
−
pF
transition frequency
IC = 10 mA; VCE = 5 V;
f = 50 MHz
100
−
MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600
RATING CHARACTERISTIC CURVES ( CHT807N1PT )
Total power dissipation P = f (T )
Collector cutoff current I
= f (T )
tot
S
CBO A
V
= 25V
CB
105
nA
400
mW
VCBO
104
300
250
200
150
100
50
max
103
typ
102
101
100
0
0
OC
oC
0
20
40
60
80
100 120
150
50
100
150
T
S
TA
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 3
K/W
10 3
D=0
0.005
0.01
0.02
0.05
0.1
10 2
10 2
10 1
10 0
0.2
0.5
10 1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
RATING CHARACTERISTIC CURVES ( CHT807N1PT )
Collector-emitter saturation voltage
Base-emitter saturation voltage
I = f (V
), h = 10
I = f (V
), h = 10
C
CEsat
FE
C
BEsat
FE
103
103
mA
mA
Ι C
Ι C
150 oC
25 oC
150 o
25 o
-50 o
C
C
-50 oC
102
5
102
5
C
101
5
101
5
100
5
100
5
10-1
0
10-1
0
1.0
2.0
3.0
V
4.0
0.2
0.4
0.6
V
0.8
VCEsat
VBEsat
DC current gain h = f (I )
Transition frequency f = f (I )
FE
C
T
C
V
= 5V
V
= 5V
CE
CE
103
103
MHz
5
5
100 o
25 o
C
C
f T
hFE
-50 o
C
102
5
102
5
101
5
100
101
10-1
100
101
102 mA 103
3
100
101
102
mA 10
Ι C
Ι C
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