HPL24CTPT [CHENMKO]
HIGH EFFICIENCY SILICON RECTIFIER; 高效硅整流
| 型号： | HPL24CTPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | HIGH EFFICIENCY SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HPL21CTPT
CHENMKO ENTERPRISE CO.,LTD
THRU
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 2.0 Ampere
HPL28CTPT
PROVISIONAL SPEC.
FEATURE
*Small Surface Mounting Type. (SMP)
* Low forward voltage, high current capability
* Low leakage current
* Glass passivated junction
* High temperature soldering guaranteed :
SMP
260oC/10 seconds at terminals
0.081 (2.05)
0.077 (1.95)
0.170 (4.31)
0.163 (4.15)
(3)
(1)
(2)
0.019 (0.50 Min.)
0.077 (1.95)
0.073 (1.85)
0.045 (1.16)
0.042 (1.07)
0.005 (0.15 Min.)
0.019 (0.50 Min.)
0.264 (6.70)
0.254 (6.46)
0.212 (5.38)
0.208 (5.29)
(2)
(1)
CIRCUIT
0.055 (1.40)
0.051 (1.30)
(3)
SMP
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
HPL21CTPT
50
HPL23CTPT
200
HPL25CTPT HPL26CTPT HPL27CTPT HPL28CTPT
HPL22CTPT
100
HPL24CTPT
300
SYMBOL
VRRM
UNITS
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
400
280
400
600
420
600
800
560
800
1000
700
VRMS
35
70
140
210
Maximum DC Blocking Voltage
VDC
50
100
200
300
1000
Maximum Average Forward Rectified Current TL = 110oC
IO
2.0
Amps
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
Typical Junction Capacitance (Note 1)
CJ
15
HPL23CTPT
50
12
pF
oC
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
HPL21CTPT
HPL26CTPT HPL27CTPT HPL28CTPT
HPL22CTPT
HPL24CTPT HPL25CTPT
CHARACTERISTICS
SYMBOL
UNITS
Volts
Maximum Instantaneous Forward Voltage at 1.0 A DC
VF
1.0
1.3
1.5
1.7
Maximum DC Reverse Current
5.0
uAmps
uAmps
at Rated DC Blocking Voltage at TA = 25oC
IR
Maximum Full Load Reverse Current Average,
Full Cycle at TA = 55oC
100
Maximum Reverse Recovery Time (Note 2)
trr
70
nSec
2004-7
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A
RATING CHARACTERISTIC CURVES ( HPL21CTPT THRU HPL28CTPT )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
3.0
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
0
2.0
1.0
0
( + )
25 Vdc
(approx)
( - )
-0.25A
Single Phase
Half Wave 60Hz
Resistive or
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
Inductive Load
-1.0A
1cm
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( OC )
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
SET TIME BASE FOR
10/20 nS/cm
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
100
10
Pulse Width = 300uS
1% Duty Cycle
T
J
J
=125oC
=100oC
1.0
0.1
T
1.0
.1
TJ
=25oC
TJ
=25oC
.01
.001
.01
0
20
40
60
80
100
120
140
0
.2
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
INSTANTANEOUS FORWARD VOLTAGE, ( V )
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
30
8.3ms Single Half Sine-Wave
(JEDEC Method)
60
40
25
20
15
20
10
6
4
10
TJ
=25oC
5
0
2
1
1
2
5
10
20
50
100
.1
.2
.4
1.0
2
4
10
20 40
100
NUMBER OF CYCLES AT 60 Hz
REVERSE VOLTAGE, ( V )
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