HPL28CTPT [CHENMKO]

HIGH EFFICIENCY SILICON RECTIFIER; 高效硅整流


型号：	HPL28CTPT
厂家：	CHENMKO ENTERPRISE CO. LTD.
描述：	HIGH EFFICIENCY SILICON RECTIFIER 高效硅整流功效
文件：	总2页 (文件大小：169K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HPL21CTPT

CHENMKO ENTERPRISE CO.,LTD

THRU

SURFACE MOUNT GLASS PASSIVATED

HIGH EFFICIENCY SILICON RECTIFIER

VOLTAGE RANGE 50 - 1000 Volts CURRENT 2.0 Ampere

HPL28CTPT

PROVISIONAL SPEC.

FEATURE

*Small Surface Mounting Type. (SMP)

* Low forward voltage, high current capability

* Low leakage current

* Glass passivated junction

* High temperature soldering guaranteed :

SMP

260^oC/10 seconds at terminals

0.081 (2.05)

0.077 (1.95)

0.170 (4.31)

0.163 (4.15)

(3)

(1)

(2)

0.019 (0.50 Min.)

0.077 (1.95)

0.073 (1.85)

0.045 (1.16)

0.042 (1.07)

0.005 (0.15 Min.)

0.019 (0.50 Min.)

0.264 (6.70)

0.254 (6.46)

0.212 (5.38)

0.208 (5.29)

(2)

(1)

CIRCUIT

0.055 (1.40)

0.051 (1.30)

(3)

SMP

Dimensions in inches and (millimeters)

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

HPL21CTPT

HPL23CTPT

200

HPL25CTPT HPL26CTPT HPL27CTPT HPL28CTPT

HPL22CTPT

100

HPL24CTPT

300

SYMBOL

VRRM

UNITS

Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

400

280

400

600

420

600

800

560

800

1000

700

VRMS

140

210

Maximum DC Blocking Voltage

VDC

100

200

300

1000

Maximum Average Forward Rectified Current TL = 110^oC

2.0

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

IFSM

Typical Junction Capacitance (Note 1)

HPL23CTPT

^oC

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

ELECTRICAL CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )

HPL21CTPT

HPL26CTPT HPL27CTPT HPL28CTPT

HPL22CTPT

HPL24CTPT HPL25CTPT

CHARACTERISTICS

SYMBOL

UNITS

Volts

Maximum Instantaneous Forward Voltage at 1.0 A DC

1.0

1.3

1.5

1.7

Maximum DC Reverse Current

5.0

uAmps

at Rated DC Blocking Voltage at TA = 25^oC

Maximum Full Load Reverse Current Average,

Full Cycle at TA = 55^oC

100

Maximum Reverse Recovery Time (Note 2)

trr

nSec

2004-7

NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts

2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A

RATING CHARACTERISTIC CURVES ( HPL21CTPT THRU HPL28CTPT )

FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

FIG. 2 - TYPICAL FORWARD

CURRENT DERATING CURVE

trr

NONINDUCTIVE

+0.5A

3.0

( - )

PULSE

GENERATOR

(NOTE 2)

D.U.T

2.0

1.0

( + )

25 Vdc

(approx)

( - )

-0.25A

Single Phase

Half Wave 60Hz

Resistive or

OSCILLOSCOPE

(NOTE 1)

( + )

NON-

INDUCTIVE

Inductive Load

-1.0A

1cm

25 50 75 100 125 150 175

LEAD TEMPERATURE ( ^OC )

NOTES: 1. Rise Time = 7 ns max. Input Impedance =

1 megohm. 22 pF.

SET TIME BASE FOR

10/20 nS/cm

2. Rise Time = 10 ns max. Source Impedlance=

50 ohms.

FIG. 3 - TYPICAL REVERSE CHARACTERISTICS

FIG. 4 - TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

100

Pulse Width = 300uS

1% Duty Cycle

=125^oC

=100^oC

1.0

0.1

1.0

=25^oC

.01

.001

.01

100

120

140

1.0

1.2

1.4

1.6

1.8

PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )

INSTANTANEOUS FORWARD VOLTAGE, ( V )

FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

200

100

8.3ms Single Half Sine-Wave

(JEDEC Method)

=25^oC

100

1.0

20 40

100

NUMBER OF CYCLES AT 60 Hz

REVERSE VOLTAGE, ( V )

相关型号：