MJU02N70CT [CITC]

700V Super Junction Power MOSFET;


型号：	MJU02N70CT
厂家：	Chip Integration Technology Corporation
描述：	700V Super Junction Power MOSFET
文件：	总7页 (文件大小：274K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MJU02N70CT

Chip Integration Technology Corporation

700V Super Junction Power MOSFET

■ Features

■ Pin Description

TO-251

• High speed power switching

• 100% UIS tested, 100% Rg tested

• Εnhanced avalanche ruggedness

• Lead free, halogen free

■ Application

• SMPS

• Ηard switching and high speed circuit

• LED lighting

• Flyback

■ Main product characteristics

V_DS

R_DS(on),max1.8Ω

I_D2A

700V

■ Absolute Maximum Ratings (T_A= 25^OC unless otherwise specified)

Symbol

PARAMETER

CONDITIONS

MJU02N70CT

UNIT

Continuous Drain Current

T_C= 25^OC

I_D

V_DS

700

Drain to Source Voltage

Gate to Source Voltage

V_GS

±30

I_DM

Pulsed Drain Current

5.8

L =4.0mH, T_C=25^OC

T_C= 25^OC

E_AS

Avalanche energy, single pulse

Power Dissipation

^OC

P_D

Operating and Storage Temperature

T_J, T_STG

-55 to 150

■ Absolute Maximum Ratings

Symbol

R_θJC

PARAMETER

Thermal Resistance Junction-case

Thermal Resistance Junction-Ambient

MJU02N70CT

UNIT

^OC/W

R_θJA

Document ID : DS-22M81

Revised Date : 2015/12/11

Revision : C

MJU02N70CT

Chip Integration Technology Corporation

700V Super Junction Power MOSFET

■ Electrical characteristics(T_J= 25^OC unless otherwise specified)

■ Static Characteristics

CONDITIONS

Symbol MIN. TYP. MAX. UNIT

V_(BR)DSS

PARAMETER

Drain to Source Breakdown Voltage

Gate Threshold Voltage

V_GS= 0V, I_D= 250µA

700

V_GS(th)

V_GS= V_DS, I_D= 250µA

V_DS= 700V, V_GS= 0V, T_J= 25°C

V_DS= 700V, V_GS= 0V, T_J= 150°C

V_GS= ±30V, V_DS= 0V

Zero Gate Voltage Drain Current

I_DSS

µA

±100

1.8

Gate to Source Leakage Current

Drain to Source On Resistance

Gate Resistance

I_GSS

R_DS(on)

R_G

Ω

V_GS= 10V, I_DS= 1.0A

1.6

2.9

V_GS= 0V, V_DSopen, f=1MHz

Ω

■ Dynamic Characteristics(note:5)

PARAMETER

CONDITIONS

Symbol MIN. TYP. MAX. UNIT

Input Capacitance

C_iss

C_oss

C_rss

236

12.7

0.8

Output Capacitance

V_DS= 100V, V_GS= 0V, F = 1MHz

Reverse Transfer Capacitance

Total Gate Charge

4.6

Q_g

V_DD= 400V, I_D= 1.0A V_GS=10V

1.0

Gate to Source Charge

Gate to Drain (Miller) Charge

Turn on Delay Time

Rise Time

Q_gs

1.4

Q_gd

t_d(on)

t_r

t_d(off)

t_f

V_DD= 400, I_D= 1.0A,V_GS=10V R_G=25Ω

Turn off Delay Time

Fall Time

■ Reverse Diode Characteristics

PARAMETER

CONDITIONS

Symbol MIN. TYP. MAX. UNIT

V_SD

t_rr

Diode Forward Voltage

I_F=1.0A, V_GS= 0V

1.2

0.9

400

0.5

Reverse Recovery Time

Reverse Recovery Charge

µC

V_R=300V, I_F=1.0A, dI_F/dt = 100A/μs

Q_rr

Document ID : DS-22M81

Revised Date : 2015/12/11

Revision : C

MJU02N70CT

Chip Integration Technology Corporation

700V Super Junction Power MOSFET

■ Rating and characteristics curve

Document ID : DS-22M81

Revised Date : 2015/12/11

Revision : C

MJU02N70CT

Chip Integration Technology Corporation

700V Super Junction Power MOSFET

■ Rating and characteristics curve

Document ID : DS-22M81

Revised Date : 2015/12/11

Revision : C

MJU02N70CT

Chip Integration Technology Corporation

700V Super Junction Power MOSFET

■ Rating and characteristics curve

Document ID : DS-22M81

Revised Date : 2015/12/11

Revision : C

MJU02N70CT

Chip Integration Technology Corporation

700V Super Junction Power MOSFET

■ Package Outline

Document ID : DS-22M81

Revised Date : 2015/12/11

Revision : C

MJU02N70CT

Chip Integration Technology Corporation

700V Super Junction Power MOSFET

■ CITC reserves the right to make changes to this document and its products and specifications at any

time without notice.

■ Customers should obtain and confirm the latest product information and specifications before final

design, purchase or use.

■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does CITC assume any liability for application assistance or customer product

design.

■ CITC does not warrant or accept any liability with products which are purchased or used for any

unintended or unauthorized application.

■ No license is granted by implication or otherwise under any intellectual property rights of CITC.

■ CITC products are not authorized for use as critical components in life support devices or systems

without express written approval of CITC.

http://www.citcorp.com.tw/

Tel:886-3-5600628

Fax:886-3-5600636

Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)

Document ID : DS-22M81

Revised Date : 2015/12/11

Revision : C

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