CLT132W [CLAIREX]
NPN Silicon Phototransistors; NPN硅光电晶体管
| 型号： | CLT132W |
| 厂家： | 
CLAIREX TECHNOLOGIES, INC |
| 描述： | NPN Silicon Phototransistors |
| 文件： | 总1页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
Clairex
CLT130W, CLT131W, CLT132W
Technologies, Inc.
The CLT130W, CLT131W and CLT132W are
NPN Silicon Phototransistors
exact replacements for obsolete part numbers
CLT2020, CLT2030 and CLT2035.
July, 2001
0.500 (12.7) min
0.210 (5.33)
0.190 (4.83)
0.215 (5.46)
0.205 (5.21)
0.190 (4.83)
0.176 (4.47)
COLLECTOR
BASE
0.160 (4.06)
0.150 (3.81)
EMITTER
0.100 (2.54) dia
0.025 (0.64)
max
0.147 (3.73)
0.137 (3.48)
0.010 (0.25)
max
0.019 (0.48)
0.016 (0.41)
Collector electrically
connected to case.
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
features
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature ...................................................................... -65°C to +200°C
operating temperature.................................................................... -65°C to +150°C
lead soldering temperature(1) ......................................................................... 260°C
collector-emitter voltage.....................................................................................30V
continuous collector current(2) ......................................................................... 50mA
continuous power dissipation(3).................................................................... 250mW
• high sensitivity
• ± 35° acceptance angle
• TO-18 hermetically sealed package
• transistor base is bonded
• RoHS compliant
description
notes:
The CLT130W, CLT131W and
CLT132W are silicon NPN planar
epitaxial phototransistors mounted in
TO-18 flat window packages. The
wide acceptance angle provided by
the flat window enables even
reception over a relatively large area.
For additional information, call
1. 0.06” (1.5mm) from the header for 5 seconds maximum.
2. 200mA when pulsed at 1.0ms, 10% duty cycle.
3. Derate linearly 1.6mW/°C from 25°C free air temperature to TA = +150°C.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
parameter
min
typ
max
units
test conditions
Light current(4)
V
CE=5V, Ee=5.0mW/cm2
VCE=5V, Ee=5.0mW/cm2
VCE=5V, Ee=5.0mW/cm2
0.4
1.0
2.5
-
-
-
-
-
-
mA
mA
mA
CLT130W
CLT131W
CLT132W
IL
ICEO
Collector dark current
-
30
5.0
5.0
-
25
nA
VCE=10V, Ee=0
V(BR)CEO
V(BR)CBO
V(BR)ECO
VCE(sat)
tr, tf
Collector-emitter breakdown
Collector-base breakdown
Emitter-collector breakdown
Collector-emitter saturation voltage
Output rise and fall time(5)
-
-
-
-
-
-
V
V
V
V
µs
deg.
IC=100µA, Ee=0
IC=100µA, Ee=0
IE=100µA, Ee=0
IC=0.4mA, Ee=5.0mW/cm2
-
0.30
-
-
-
-
3.0
70
VCC=5V, RL=1KΩ
Total angle at half sensitivity points
θ
HP
notes: 4. Radiation source for all light current testing is a 850nm IRED.
5. The radiation source is a pulsed gallium arsenide IRED with rise and fall times of ≤0.3µs.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/22/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
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