IXD_602 [CLARE]

2-Ampere Dual Low-Side Ultrafast MOSFET Drivers; 2安培双低侧超快MOSFET驱动器
IXD_602
型号: IXD_602
厂家: CLARE    CLARE
描述:

2-Ampere Dual Low-Side Ultrafast MOSFET Drivers
2安培双低侧超快MOSFET驱动器

驱动器
文件: 总13页 (文件大小:1594K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IXD_602  
2-Ampere Dual Low-Side  
Ultrafast MOSFET Drivers  
Features  
Description  
2A Peak Source/Sink Drive Current  
Wide Operating Voltage Range: 4.5V to 35V  
-40°C to +125°C Extended Operating Temperature  
Range  
The IXDF602/IXDI602/IXDN602 dual high-speed gate  
drivers are especially well suited for driving the latest  
IXYS MOSFETs and IGBTs. Each of the two outputs  
can source and sink 2A of peak current while  
Logic Input Withstands Negative Swing of up to 5V  
Matched Rise and Fall Times  
Low Propagation Delay Time  
producing voltage rise and fall times of less than 10ns.  
The input of each driver is CMOS compatible, and is  
virtually immune to latch up. Proprietary circuitry  
eliminates cross conduction and current  
Low 10μA Supply Current  
Low Output Impedance  
“shoot-through.Low propagation delay and fast,  
matched rise and fall times make the IXD_602 family  
ideal for high-frequency and high-power applications.  
Applications  
Efficient Power MOSFET and IGBT Switching  
Switch Mode Power Supplies  
Motor Controls  
DC to DC Converters  
Class-D Switching Amplifiers  
Pulse Transformer Driver  
The IXDN602 is configured as a dual non-inverting  
driver, the IXDI602 is configured as a dual inverting  
driver, and the IXDF602 has one inverting and one  
non-inverting driver.  
The IXD_602 family is available in a standard 8-pin  
DIP (PI), an 8-pin SOIC (SIA), an 8-pin Power SOIC  
with an exposed metal back (SI), and an 8-pin DFN  
(D2) package.  
RoHS  
2002/95/EC  
Pb  
e3  
Ordering Information  
Logic  
Configuration  
Packing  
Method  
Part Number  
Package Type  
Quantity  
IXDF602D2TR  
IXDF602PI  
8-Pin DFN  
Tape & Reel  
Tube  
2000  
50  
8-Pin DIP  
INA  
OUTA  
OUTB  
A
B
IXDF602SI  
8-Pin Power SOIC with Exposed Metal Back  
Tube  
100  
IXDF602SITR  
IXDF602SIA  
IXDF602SIATR  
IXDI602D2TR  
IXDI602PI  
8-Pin Power SOIC with Exposed Metal Back  
Tape & Reel  
Tube  
2000  
100  
INB  
8-Pin SOIC  
8-Pin SOIC  
Tape & Reel  
Tape & Reel  
Tube  
2000  
2000  
50  
8-Pin DFN  
8-Pin DIP  
8-Pin Power SOIC with Exposed Metal Back  
8-Pin Power SOIC with Exposed Metal Back  
8-Pin SOIC  
INA  
INB  
A
B
OUTA  
OUTB  
IXDI602SI  
Tube  
100  
IXDI602SITR  
IXDI602SIA  
IXDI602SIATR  
IXDN602D2TR  
IXDN602PI  
Tape & Reel  
Tube  
2000  
100  
8-Pin SOIC  
Tape & Reel  
Tape & Reel  
Tube  
2000  
2000  
50  
8-Pin DFN  
8-Pin DIP  
INA  
INB  
OUTA  
OUTB  
A
B
IXDN602SI  
8-Pin Power SOIC with Exposed Metal Back  
8-Pin Power SOIC with Exposed Metal Back  
8-Pin SOIC  
Tube  
100  
IXDN602SITR  
IXDN602SIA  
IXDN602SIATR  
Tape & Reel  
Tube  
2000  
100  
8-Pin SOIC  
Tape & Reel  
2000  
DS-IXD_602 - R02  
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1
IXD_602  
1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
1.1 Pin Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
1.2 Pin Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
1.4 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
1.5 Electrical Characteristics: T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
A
1.6 Electrical Characteristics: T = - 40°C to +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
A
1.7 Thermal Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
2. IXD_602 Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
2.1 Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
2.2 Characteristics Test Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
3. Block Diagrams & Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3.1 IXDI602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3.2 IXDF602. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3.3 IXDN602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
4. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
5. Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
5.1 Moisture Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
5.2 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
5.3 Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
5.4 Mechanical Dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
R02  
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2
IXD_602  
1 Specifications  
1.1 Pin Configurations  
1.2 Pin Definitions  
IXDF602  
Pin Name  
Description  
NC  
INA  
1
2
3
4
8
7
6
5
NC  
INA  
INB  
Channel A Logic Input  
Channel B Logic Input  
A
OUTA  
VCC  
GND  
INB  
B
OUTB  
OUTA  
OUTA  
Channel A Output - Sources or sinks current to  
turn-on or turn-off a discrete MOSFET or IGBT  
IXDI602  
OUTB  
OUTB  
Channel B Output - Sources or sinks current to  
turn on or turn off a discrete MOSFET or IGBT  
NC  
INA  
1
2
3
4
8
7
6
5
NC  
V
Supply Voltage - Provides power to the device  
CC  
A
OUTA  
VCC  
Ground - Common ground reference for the  
device  
GND  
INB  
GND  
B
OUTB  
IXDN602  
NC  
INA  
1
2
3
4
8
7
6
5
NC  
A
B
OUTA  
VCC  
GND  
INB  
OUTB  
1.3 Absolute Maximum Ratings  
Parameter  
Symbol  
Minimum  
Maximum  
Units  
V
Supply Voltage  
Input Voltage  
-0.3  
-5.0  
-
40  
V
V
CC  
V
VCC+0.3  
IN  
I
Output Current  
Junction Temperature  
Storage Temperature  
2
A
OUT  
T
°C  
-55  
-65  
+150  
+150  
J
T
°C  
STG  
Unless otherwise specified, absolute maximum electrical ratings are at 25°C  
Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device.  
Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not  
implied.  
1.4 Recommended Operating Conditions  
Parameter  
Symbol  
Minimum  
Maximum  
Units  
V
Supply Voltage  
4.5  
-40  
35  
V
CC  
T
Operating Temperature Range  
+125  
°C  
A
R02  
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3
IXD_602  
1.5 Electrical Characteristics: T = 25°C  
A
Test Conditions: 4.5V < V < 35V, one channel (unless otherwise noted).  
CC  
Parameter  
Input Voltage, High  
Conditions  
Symbol  
VIH  
Minimum  
Typical Maximum Units  
4.5V < V < 18V  
CC  
3.0  
-
-
-
0.8  
10  
-
V
4.5V < V < 18V  
CC  
Input Voltage, Low  
VIL  
-
-
0V < V < V  
IN  
Input Current  
IIN  
CC  
-
μA  
Output Voltage, High  
Output Voltage, Low  
Output Resistance, High State  
Output Resistance, Low State  
-
VOH  
VOL  
ROH  
ROL  
VCC-0.025  
-
V
-
-
-
-
-
0.025  
4
V
=18V, I =-10mA  
OUT  
CC  
2.5  
1.5  
Ω
V
=18V, I =10mA  
OUT  
CC  
3
Limited by package power  
dissipation  
Output Current, Continuous  
IDC  
-
-
1
A
V =18V, C  
CC  
=1000pF  
=1000pF  
=1000pF  
=1000pF  
Rise Time  
tr  
LOAD  
LOAD  
LOAD  
LOAD  
-
-
-
-
-
-
-
7.5  
6.5  
35  
38  
1
15  
15  
60  
60  
3
V =18V, C  
Fall Time  
tf  
CC  
ns  
V =18V, C  
On-Time Propagation Delay  
Off-Time Propagation Delay  
tondly  
toffdly  
CC  
V =18V, C  
CC  
V
=18V, V =3.5V  
IN  
mA  
CC  
V =18V, V =0V  
CC IN  
Power Supply Current  
ICC  
<1  
<1  
10  
10  
μA  
V
=18V, V =V  
IN CC  
CC  
1.6 Electrical Characteristics: T = - 40°C to +125°C  
A
Test Conditions: 4.5V < V < 35V, one channel (unless otherwise noted).  
CC  
Parameter  
Input Voltage, High  
Conditions  
Symbol  
VIH  
Minimum  
Maximum  
Units  
4.5V < V < 18V  
CC  
3.3  
-
-
0.65  
10  
-
V
4.5V < V < 18V  
CC  
Input Voltage, Low  
VIL  
0V < V < V  
IN  
Input Current  
IIN  
CC  
-10  
μA  
Output Voltage, High  
Output Voltage, Low  
Output Resistance, High State  
Output Resistance, Low State  
-
VOH  
VOL  
ROH  
ROL  
VCC-0.025  
V
-
-
-
-
0.025  
6
V
=18V, I =-10mA  
OUT  
CC  
Ω
V
=18V, I =10mA  
OUT  
CC  
5
Limited by package power  
dissipation  
Output Current, Continuous  
IDC  
-
1
A
V =18V, C  
CC  
=1000pF  
=1000pF  
=1000pF  
=1000pF  
Rise Time  
tr  
LOAD  
LOAD  
LOAD  
LOAD  
-
-
-
-
-
-
-
18  
18  
V =18V, C  
Fall Time  
tf  
CC  
ns  
V =18V, C  
On-Time Propagation Delay  
Off-Time Propagation Delay  
tondly  
toffdly  
CC  
75  
V =18V, C  
CC  
75  
V
=18V, V =3.5V  
IN  
3.5  
150  
150  
mA  
CC  
V =18V, V =0V  
CC IN  
Power Supply Current  
ICC  
μA  
V
=18V, V =V  
IN CC  
CC  
4
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R02  
IXD_602  
1.7 Thermal Characteristics  
Package  
Parameter  
Symbol  
Rating  
Units  
IXDD602D2 (8-Pin DFN)  
IXD_602PI (8-Pin DIP)  
35  
125  
85  
θ
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
°C/W  
°C/W  
JA  
IXD_602SI (8-Pin Power SOIC)  
IXD_602SIA (8-Pin SOIC)  
IXD_602SI (8-Pin Power SOIC)  
120  
10  
θ
JC  
2 IXD_602 Performance  
2.1 Timing Diagrams  
VIH  
VIH  
VIL  
INx  
INx  
VIL  
t
t
t
t
ondly  
ondly  
offdly  
offdly  
90%  
90%  
10%  
OUTx  
10%  
OUTx  
t
t
t
t
r
f
f
r
Non-Inverting Driver Waveforms  
Inverting Driver Waveforms  
2.2 Characteristics Test Diagram  
+
VCC  
VCC  
INA  
INB  
OUTA  
OUTB  
0.1μF 10μF  
-
Tektronix  
Current Probe  
CLOAD  
GND  
6302  
VIN  
Tektronix  
Current Probe  
6302  
CLOAD  
R02  
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5
IXD_602  
3 Block Diagrams & Truth Tables  
3.1 IXDI602  
3.3 IXDN602  
VCC  
VCC  
OUTA  
INA  
OUTA  
INA  
GND  
GND  
VCC  
VCC  
OUTB  
INB  
OUTB  
INB  
IN  
OUT  
IN  
OUT  
X
X
X
X
0
1
0
1
1
0
0
1
3.2 IXDF602  
VCC  
OUTA  
INA  
GND  
VCC  
OUTB  
INB  
INA  
OUTA  
0
1
1
0
INB  
0
OUTB  
0
1
1
6
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R02  
IXD_602  
4 Typical Performance Characteristics  
Rise & Fall Time vs.Temperature  
Rise Time vs. Supply Voltage  
(VIN=0-5V, f=10kHz,TA=25ºC)  
Fall Time vs. Supply Voltage  
(VIN=0-5V, f=10kHz,TA=25ºC)  
(VIN=0-5V, VCC=18V, CL=1nF)  
12  
11  
10  
9
120  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
t
r
CL=4.7nF  
CL=1nF  
CL=470pF  
CL=4.7nF  
CL=1nF  
CL=470pF  
8
t
f
7
6
5
4
-40 -20  
0
20 40 60 80 100 120 140  
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
Temperature (ºC)  
Supply Voltage (V)  
Supply Voltage (V)  
Fall Time vs. Load Capacitance  
Rise Time vs. Load Capacitance  
120  
120  
VCC=4.5V  
VCC=8V  
VCC=4.5V  
VCC=8V  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
VCC=12V  
VCC=18V  
VCC=12V  
VCC=18V  
V
V
V
CC=25V  
CC=30V  
CC=35V  
V
V
V
CC=25V  
CC=30V  
CC=35V  
0
1000  
2000  
3000  
4000  
5000  
0
1000  
2000  
3000  
4000  
5000  
Load Capacitance (pF)  
Load Capacitance (pF)  
Propagation Delay vs.Temperature  
Propagation Delay vs. Supply Voltage  
Propagation Delay vs. Input Voltage  
(VCC=18V, CL=1nF)  
(VIN=0-5V, CL=1nF, f=1kHz)  
(VCC=18V, CL=1nF)  
55  
50  
45  
40  
35  
30  
25  
20  
200  
150  
100  
50  
70  
60  
50  
40  
30  
20  
toffdly  
tondly  
t
offdly  
t
offdly  
t
ondly  
t
ondly  
0
-40 -20  
0
20 40 60 80 100 120 140  
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
Temperature (ºC)  
Supply Voltage (V)  
Input Voltage (V)  
Input Threshold vs.Temperature  
(VCC=18V, CL=1nF)  
Input Threshold vs. Supply Voltage  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
Min VIH  
Max VIL  
Min VIH  
Max VIL  
0
5
10  
15  
20  
25  
30  
35  
40  
-40 -20  
0
20 40 60 80 100 120 140  
Supply Voltage (V)  
Temperature (ºC)  
R02  
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7
IXD_602  
Supply Current vs. Load Capacitance  
Both Outputs Active  
(VCC=8V)  
Supply Current vs. Load Capacitance  
Both Outputs Active  
(VCC=12V)  
Supply Current vs. Load Capacitance  
Both Outputs Active  
(VCC=18V)  
300  
250  
200  
150  
100  
50  
200  
150  
100  
50  
200  
150  
100  
50  
f=2MHz  
f=1MHz  
f=2MHz  
f=1MHz  
f=2MHz  
f=1MHz  
f=500kHz  
f=100kHz  
f=50kHz  
f=10kHz  
f=1kHz  
f=500kHz  
f=100kHz  
f=50kHz  
f=10kHz  
f=1kHz  
f=500kHz  
f=100kHz  
f=50kHz  
f=10kHz  
f=1kHz  
0
100  
0
100  
0
100  
1000  
10000  
1000  
10000  
1000  
10000  
Load Capacitance (pF)  
Load Capacitance (pF)  
Load Capacitance (pF)  
Supply Current vs. Frequency  
Both Outputs Active  
(VCC=12V)  
Supply Current vs. Frequency  
Both Outputs Active  
(VCC=8V)  
Supply Current vs. Load Capacitance  
Both Outputs Active  
(VCC=35V)  
1000  
100  
10  
1000  
100  
10  
400  
350  
300  
250  
200  
150  
100  
50  
CL=4.7nF  
CL=1nF  
CL=470pF  
CL=4.7nF  
CL=1nF  
CL=470pF  
f=2MHz  
f=1MHz  
f=500kHz  
f=100kHz  
f=50kHz  
f=10kHz  
f=1kHz  
1
1
0.1  
0.01  
0.1  
0.01  
0
100  
0.1  
1
10  
100  
1000  
10000  
0.1  
1
10  
100  
1000  
10000  
1000  
10000  
Frequency (kHz)  
Frequency (kHz)  
Load Capacitance (pF)  
Supply Current vs. Frequency  
Both Outputs Active  
(VCC=18V)  
Quiescent Supply Current  
vs.Temperature  
(VCC=18V)  
Supply Current vs. Frequency  
Both Outputs Active  
(VCC=35V)  
1000  
100  
10  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1000  
100  
10  
CL=4.7nF  
CL=1nF  
CL=470pF  
CL=4.7nF  
CL=1nF  
CL=470pF  
VIN=3.5V  
VIN=5V  
VIN=10V  
1
1
0.1  
0.01  
0.1  
0.01  
VIN=0V & 18V  
0.1  
1
10  
100  
1000  
10000  
-40 -20  
0
20 40 60 80 100 120 140  
0.1  
1
10  
100  
1000  
10000  
Frequency (kHz)  
Temperature (ºC)  
Frequency (kHz)  
Output Source Current  
vs. Supply Voltage  
(CL=27nF)  
Output Sink Current  
vs. Supply Voltage  
(CL=27nF)  
Dynamic Supply Current  
vs.Temperature  
(VIN=0-5V, VCC=18V, CL=1nF, f=1kHz)  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
8
7
6
5
4
3
2
1
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
-40 -20  
0
20 40 60 80 100 120 140  
Supply Voltage (V)  
Supply Voltage (V)  
Temperature (ºC)  
8
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R02  
IXD_602  
Output Source Current  
vs.Temperature  
(VCC=18V, CL=27nF)  
Output Sink Current vs.Temperature  
(VCC=18V, CL=27nF)  
-5.0  
-4.5  
-4.0  
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
-40 -20  
0
20 40 60 80 100 120 140  
-40 -20  
0
20 40 60 80 100 120 140  
Temperature (ºC)  
Temperature (ºC)  
Low State Output Resistance  
vs. Supply Voltage  
High-State Output Resistance  
vs. Supply Voltage  
(IOUT= +10mA)  
(IOUT= -10mA)  
10  
8
10  
8
6
6
4
4
2
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
Supply Voltage (V)  
Supply Voltage (V)  
R02  
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9
IXD_602  
5 Manufacturing Information  
5.1 Moisture Sensitivity  
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. Clare classified  
all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint  
industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our  
products to the maximum conditions set forth in the standard, and guarantee proper operation of our  
devices when handled according to the limitations and information in that standard as well as to any limitations set  
forth in the information or standards referenced below.  
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced  
product performance, reduction of operable life, and/or reduction of overall reliability.  
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to  
the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.  
Device  
Moisture Sensitivity Level (MSL) Rating  
IXD_602SI / IXD_602SIA / IXD_602PI  
IXD_602D2  
MSL 1  
MSL 3  
5.2 ESD Sensitivity  
This product is ESD Sensitive, and should be handled according to the industry standard  
JESD-625.  
5.3 Reflow Profile  
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020  
must be observed.  
Device  
Maximum Temperature x Time  
IXD_602SI / IXD_602SIA / IXD_602D2  
IXD_602PI  
260°C for 30 seconds  
250°C for 30 seconds  
RoHS  
2002/95/EC  
Pb  
e3  
10  
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R02  
IXD_602  
5.4 Mechanical Dimensions  
5.4.1 SIA (8-Pin SOIC)  
0.10 / 0.25  
(0.004 / 0.010)  
1.27  
(0.050)  
0.40 / 1.27  
(0.016 / 0.050)  
3.80 / 4.00  
(0.150 / 0.157)  
5.40  
(0.213)  
5.80 / 6.20  
(0.228 / 0.244)  
1.55  
(0.061)  
PIN 1  
0.25 / 0.50 x45º  
(0.010 / 0.020 x45º)  
0.60  
0.31 / 0.51  
(0.012 / 0.020)  
1.27 BSC  
(0.05 BSC)  
(0.024)  
0º / 8º  
Recommended PCB Land Pattern  
4.80 / 5.00  
(0.190 / 0.197)  
Dimensions  
mm MIN / mm MAX  
(inches MIN / inches MAX)  
0.10 / 0.25  
(0.004 / 0.010)  
1.30 / 1.75  
(0.051 / 0.069)  
NOTE: Molded package conforms to JEDEC standard configuration  
MS-012 variation AA.  
5.4.2 SI (8-Pin Power SOIC with Exposed Metal Back)  
3.80  
(0.150)  
0.10 / 0.25  
(0.004 / 0.010)  
1.55  
(0.061)  
0.40 / 1.27  
(0.016 / 0.050)  
3.80 / 4.00  
5.80 / 6.20  
(0.228 / 0.244)  
5.40  
(0.209) (0.108)  
2.75  
(0.150 / 0.157)  
PIN 1  
0.25 / 0.50 x45º  
(0.010 / 0.020 x45º)  
0.60  
(0.024)  
1.27  
(0.050)  
0.31 / 0.51  
(0.012 / 0.020)  
1.27 BSC  
(0.05 BSC)  
0º / 8º  
4.80 / 5.00  
(0.190 / 0.197)  
Recommended PCB Land Pattern  
0.03 / 0.10  
(0.001 / 0.004)  
1.30 / 1.75  
(0.051 / 0.069)  
Dimensions  
mm MIN / mm MAX  
(inches MIN / inches MAX)  
NOTES:  
2.29 / 2.79  
1. Molded package conforms to JEDEC standard configuration  
MS-012 variation BA.  
(0.090 / 0.110)  
2. The exposed metal pad on the back of the SI package may be  
left floating or connected to GND. It is not suitable for carrying  
current.  
3.30 / 3.81  
(0.130 / 0.150)  
R02  
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11  
IXD_602  
5.4.3 Tape & Reel Information for SI and SIA Packages  
1.55 0.05  
330.2 DIA.  
4.00 0.10 See Note #2  
(13.00 DIA.)  
0.30 0.05  
R0.50 TYP  
1.75 0.10  
2.00 0.10  
B
Top Cover  
Tape Thickness  
0.102 MAX.  
(0.004 MAX.)  
5.50 0.10  
(3.40)  
B0=5.20 0.10  
12.00 0.30  
A
A
Embossed Carrier  
1.80 0.10  
K0=2.30 0.10  
1.50 (MIN)  
B
8.00 0.10  
SECTION B-B  
A0=6.40 0.10  
Embossment  
(4.70)  
(1.20)  
(70º)  
NOTES:  
1. A0 & B0 measured at 0.3mm above base of pocket.  
2. 10 pitches cumulative tol. 0.2mm  
3. ( ) Reference dimensions only.  
SECTION A-A  
4. Unless otherwise specified, all dimensions in millimeters.  
5.4.4 PI (8-Pin DIP)  
8-0.900 DIA.  
(8-0.035 DIA.)  
2.540  
(0.100)  
9.02 / 10.16  
(0.355 / 0.400)  
0.20 / 0.38  
(0.008 / 0.015)  
7.50  
(0.295)  
1.40  
(0.055)  
6.10 / 6.86  
(0.240 / 0.270)  
7.62 BSC  
(0.300 BSC)  
2.540 BSC  
(0.100 BSC)  
7.37 / 8.26  
(0.290 / 0.325)  
7.62 / 10.92  
(0.300 / 0.430)  
PC Board Pattern  
3.05 / 3.81  
(0.120 / 0.150)  
3.43 / 4.70  
(0.135 / 0.185)  
0.38 / 1.02  
(0.015 / 0.040)  
Dimensions  
mm MIN / mm MAX  
(inches MIN / inches MAX)  
1.14 / 1.65  
3.18 / 3.81  
(0.125 / 0.150)  
(0.045 / 0.065)  
0.38 / 0.58  
(0.015 / 0.023)  
NOTE: Molded package conforms to JEDEC standard configuration  
MS-001 variation BA.  
12  
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R02  
IXD_602  
5.4.5 D2 (8-Pin DFN)  
5.00 BSC  
(0.197 BSC)  
0.35 x 45º  
(0.014 x 45º)  
0.80 / 1.00  
(0.031 / 0.039)  
0.20 REF  
(0.008 REF)  
0.95  
(0.037)  
4.50  
(0.177)  
Pin 1  
4.00 BSC  
(0.158 BSC)  
3.05  
(0.120)  
0.45  
(0.018)  
0.00 / 0.05  
(0.000 / 0.002)  
2.55  
(0.100)  
1.20  
(0.047)  
0.76 / 0.81  
(0.030 / 0.032)  
Recommended PCB Land Pattern  
3.04 / 3.09  
(0.120 / 0.122)  
Dimensions  
mm MIN / mm MAX  
(inches MIN / inches MAX)  
0.30 / 0.45  
(0.012 / 0.018)  
0.95 BSC  
(0.037 BSC)  
Pin 1  
Pin 8  
2.54 / 2.59  
(0.100 / 0.102)  
NOTE:  
0.35 / 0.45 x 45º  
(0.014 / 0.018 x 45º)  
The exposed metal pad on the back of the D2 package may be  
left floating or connected to ground. It is not suitable for carrying current.  
5.4.6 Tape & Reel Information for D2 Package  
1.55 0.05  
330.2 DIA.  
(13.00 DIA.)  
4.00 0.10 See Note #2  
2.00 0.05  
1.75 0.10  
R0.75 TYP  
Top Cover  
Tape Thickness  
0.102 MAX.  
(0.004 MAX.)  
(0.05)  
5º MAX  
5.50 0.05  
(0.05)  
B0=5.40 0.10  
12.00 0.30  
Embossed Carrier  
K0=1.90 0.10  
1.50 (MIN)  
8.00 0.10  
NOTES:  
5º MAX  
1. A0 & B0 measured at 0.3mm above base of pocket.  
2. 10 pitches cumulative tol. 0.2mm  
3. ( ) Reference dimensions only.  
A0=4.25 0.10  
Embossment  
4. Unless otherwise specified, all dimensions in millimeters.  
0.30 0.05  
For additional information please visit our website at: www.clare.com  
Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and  
product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’s Standard Terms and Conditions of Sale,  
Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for  
a particular purpose, or infringement of any intellectual property right.  
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other  
applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental  
damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice.  
Specification: DS-IXD_602-R02  
©Copyright 2011, Clare, Inc.  
All rights reserved. Printed in USA.  
2/3/2011  
R02  
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13  

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