CDBA140GS [COMCHIP]

SMD Schottky Barrier Rectifier; SMD肖特基整流器


型号：	CDBA140GS
厂家：	COMCHIP TECHNOLOGY
描述：	SMD Schottky Barrier Rectifier SMD肖特基整流器整流二极管
文件：	总2页 (文件大小：79K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSMMDD SScchhoottttkkyy Barrier Rectifier

CCOOMMCCHHIIPP

www.comchip.com.tw

CDBA120 Thru CDBA1100GS

Reverse Voltage: 20 - 100 Volts

Forward Current: 1.0 Amp

Features

DO-214AC (SMA)

Ideal for surface mount applications

Easy pick and place

Plastic package has Underwriters Lab.

flammability classification 94V-0

0.067(1.70)

0.051(1.29)

0.110(2.79)

0.086(2.18)

Built-in strain relief

0.180(4.57)

Low forward voltage drop

0.160(4.06)

0.012(0.31)

0.006(0.15)

Mechanical data

0.090(2.29)

0.067(1.70)

Case: JEDEC DO-214AC molded plastic

0.008(0.20)

0.004(0.10)

0.059(1.50)

0.035(0.89)

Terminals: solderable per MIL-STD-750,

method 2026

0.209(5.31)

0.185(4.70)

Polarity: Color band denotes cathode

end

Dimensions in inches and (millimeters)

Mounting position: Any

Approx. weight:0.064 gram

Maximum Ratings and Electrical Characterics

CDBA120GS

CDBA1100GS

CDBA140GS

CDBA180GS

Symbol

CDBA160GS

Parameter

Unit

VRRM

Max. Repetitive PeakReverse Voltage

Max. DC BlockingVoltage

Max. RMS Voltage

100

VDC

VRMS

Peak Surge ForwardCurrent

8.3ms single halfsine-wave

superimposed on rateload

( JEDEC method)

IFSM

I o

V F

I R

1.0

Max. Average Forward Current

Max. Instantaneous ForwardCurrent

at 1.0 A

0.50

0.70

0.85

Max. DC ReverseCurrent at RatedDC

Blocking Voltage

Ta=25

0.5

Ta=100

Max. Thermal Resistance(Note 1)

C/W

- 5 0 t o + 1 2 5

T j

Operating Junction Temperature

TSTG

Storage Temperature

- 6 5 t o + 1 5 0

Note 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2copper pad areas

Page 1

MDS0208007C

SSMMDD SScchhoottttkkyy Barrier Rectifier

CCOOMMCCHHIIPP

www.comchip.com.tw

Rating and Characteristic Curves (CDBA120GS Thru CDBA1100GS)

Fig.2 - Forward Characteristics

Fig. 1 - Reverse Characteristics

100

CDBA120-140GS

CDBA160GS

CDBA180-1100GS

Tj=75 C

0.1

Tj=25 C

Pulse width 300uS

4% duty cycle

Tj=25 C

0.01

0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7

1.9 2.1

100

120

140

160

180

200

Forward Voltage (V)

Percent of RatedPeak Reverse Voltage (%)

Fig. 3 - Junction Capacitance

Fig. 4 - Current Derating Curve

350

300

250

200

150

100

=1MHz and applied

4VDC reverse voltage

1.2

1.0

0.8

0.6

0.4

0.2

140

160

0.01

0.1

1.0

100

120

140

Ambient Temperature ( C)

Reverse Voltage (V)

Fig. 5 - Non repetitive forward

surge current

8.3mS Single HalfSine

Wave JEDEC methode

Tj=25 C

1 00

Number of Cyclesat 60Hz

Page 2

MDS0208007C

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