CDBA140 [COMCHIP]
SMD Schottky Barrier Rectifier; SMD肖特基整流器
| 型号： | CDBA140 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Schottky Barrier Rectifier |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSMMDD SScchhoottttkky Barrier Rectifier
CCOOMMCCHHIIPP
www.comchip.com.tw
CDBA120 Thru CDBA1100
Reverse Voltage: 20 - 100 Volts
Forward Current: 1.0 Amp
Features
DO-214AC (SMA)
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
0.067(1.70)
0.110(2.79)
0.086(2.18)
flammability classification 94V-0
0.051(1.29)
Built-in strain relief
0.180(4.57)
0.160(4.06)
Low forward voltage drop
0.012(0.31)
0.006(0.15)
Mechanical data
0.091(2.31)
0.067(1.70)
Case: JEDEC DO-214AC molded plastic
0.008(0.20)
0.004(0.10)
0.059(1.50)
Terminals: solderable per MIL-STD-750,
0.035(0.89)
0.209(5.31)
0.185(4.70)
method 2026
Polarity: Color band denotes cathode
end
Dimensions in inches and (millimeters)
Mounting position: Any
Approx. weight:0.064 gram
Maximum Ratings and Electrical Characterics
CDBA120
CDBA140
CDBA180
CDBA1100
Symbol
CDBA160
Parameter
Unit
VRRM
Max. Repetitive PeakReverse Voltage
Max. DC BlockingVoltage
Max. RMS Voltage
20
20
14
40
40
28
80
80
56
100
100
70
V
V
V
60
60
42
VDC
VRMS
Peak Surge ForwardCurrent
8.3ms single halfsine-wave
superimposed on rateload
( JEDEC method)
IFSM
A
35
I o
V F
I R
1.0
Max. Average Forward Current
A
Max. Instantaneous ForwardCurrent
at 1.0 A
0.50
0.70
0.85
V
Max. DC ReverseCurrent at RatedDC
Blocking Voltage
Ta=25
C
0.5
.
mA
10
5
C
Ta=100
88
20
R
JA
Max. Thermal Resistance(Note 1)
C/W
R
JL
- 5 0 t o + 1 2 5
T j
Operating Junction Temperature
C
C
TSTG
Storage Temperature
- 6 5 t o + 1 5 0
Note 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2copper pad areas
Page 1
MDS0208007B
SSMMDD SScchhoottttkky Barrier Rectifier
CCOOMMCCHHIIPP
www.comchip.com.tw
Rating and Characteristic Curves (CDBA120 Thru CDBA1100)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
100
100
CDBA120-140
CDBA160
10
10
CDBA180-1100
1
1
Tj=75 C
0.1
0.1
Tj=25 C
Pulse width 300uS
4% duty cycle
Tj=25 C
0.01
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
1.9 2.1
0
20
40
60
80
100
120
140
160
180
200
Forward Voltage (V)
Percent of RatedPeak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Current Derating Curve
350
300
250
200
150
100
=1MHz and applied
4VDC reverse voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
50
0
160
0.01
0.1
1.0
10
100
20
40
60
80
100
120
140
Ambient Temperature ( C)
Reverse Voltage (V)
Fig. 5 - Non repetitive forward
surge current
50
40
30
20
10
8.3mS Single HalfSine
Wave JEDEC methode
Tj=25 C
0
1
5
10
50
1 00
Number of Cyclesat 60Hz
Page 2
MDS0208007B
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