CDBL0860 [COMCHIP]
SMD Schottky Barrier Diodes; SMD肖特基势垒二极管
| 型号： | CDBL0860 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Schottky Barrier Diodes |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSMMDD Schottky Barrier Diodes
CCOOMMCCHHIIPP
www.comchiptech.com
CDBL0820 - CDBL0860
Voltage: 20- 60 Volts
Current: 0.8 Amp
Feature
DO-213AA (Plastic Mini-Melf)
Ideal for surface mount application
Easy pick and place
Plastic package has Underwriters Lab.
flammability classifcation 94V-0
Build-in strain relief
0.015(0.4)
0.012(0.3)
0.14(3.6)
0.13(3.3)
Mechanical data
Case: DO-213AA molded plastic
0.063(1.60)
0.055(1.40)
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Indicated by cathode band
Mounting position: Any
Weight:0.036 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
Parameter
Symbol
CDBL0820
CDBL0840
CDBL0860
Unit
Max.RepetitivePeak Reverse Voltage
Max. DC BlockingVoltage
Max. RMS Voltage
VRRM
20
14
20
40
28
40
60
42
60
V
V
V
VDC
VRMS
Peak Surge ForwardCurrent
8.3ms single halfsine-wave
Sine-wave superimposed on
Rate load (JEDEC )
IFSM
10
A
Max. AverageForward Current
Max. Forward Currentat 0.8 A
I o
0.8
A
V
V F
0.50
0.70
Max. Reverse Current Tj=25 C
Tj=100C
0.5
I R
mA
10.0
Max. Thermal Resistance(Note1)
30
75
R
R
JA
C/W
JT
Operating junction temperature
T j
-55 to +125
C
Storage temperature
TSTG
-55 to +150
C
Note 1: Thermalresistance from junctionto ambient andjunction to terminal6.0mm copper padsto each terminal.
Page 1
MDS0211006A
SSMMDD SScchhoottttkkyy Barrier Diodes
CCOOMMCCHHIIPP
www.comchiptech.com
RATING AND CHARACTERISTIC CURVES (CDBL0820-0860)
Fig. 1 - Typical Reverse Characteristics
Fig. 2 - Typical Forward Characteristics
100
100
CDBL0820-0840
10
10
Tj=125 C
1.0
CDBL0860
1.0
0.1
Tj=75 C
Tj=25 C
0.1
0.01
Tj=25 C
Pulse width 300uS
1% duty cycle
0.001
0.01
0
0.2
0.4 0.6 0.8 1.0
1.2 1.4 1.6 1.8 2.0
0
2 0
40
6 0
8 0
10 0
1 2 0
14 0
Percent of RatedPeak Reverse Voltage (%)
Reverse Voltage(V)
Fig. 3 - Junction Capacitance
Fig. 4 - Current Derating Curve
1.2
1000
=1MHz and applied
CDBL0820-0840
4VDC reverse voltage
1.0
0.8
CDBL0860
100
0.6
0.4
0.2
10
0.1
1.0
10
100
0
25
50
75
100
125
150
Ambient Temperature ( C)
Reverse Voltage (V)
Fig. 5 - Non repetitive forward
surge current
10
8.3mS Single HalfSine
Wave JEDEC methode
8
6
Tj=25 C
4
2
0
1
5
10
50
1 00
Number of Cyclesat 60Hz
Page 2
MDS0211006A
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