CDBMH230-HF [COMCHIP]
SMD Schottky Barrier Rectifiers; SMD肖特基势垒整流器
| 型号： | CDBMH230-HF |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Schottky Barrier Rectifiers |
| 文件： | 总4页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Schottky Barrier Diode
CDBQR40-HF
Io = 200 mA
VR = 40 Volts
RoHS Device
Halogen Free
0402/SOD-923F
Features
-Low reverse current.
0.041(1.05)
0.037(0.95)
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.026(0.65)
0.022(0.55)
Mechanical data
0.022(0.55)
0.018(0.45)
-Case: 0402/SOD-923F standard package,
0.012(0.30) Typ.
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BC
-Mounting position: Any.
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
-Weight: 0.001 gram(approx.).
O
Maximum Rating (at TA=25 C unless otherwise noted)
Symbol
Parameter
Peak reverse voltage
Reverse voltage
Conditions
Min Typ Max Unit
VRM
VR
40
40
V
V
RMS reverse voltage
VR(RMS)
IO
28
V
Average forward rectified current
200
mA
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Forward current,surge peak
IFSM
0.6
A
Power dissipation
PD
TSTG
Tj
125
mW
O
Storage temperature
Junction temperature
-65
+125
+125
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Typ
Symbol
Parameter
Conditions
Min
Max Unit
IF = 1mA
IF = 40mA
0.38
1
Forward voltage
VF
V
Reverse current
VR = 30V
IR
0.2
5
uA
pF
Capacitance between terminals
Reverse recovery time
f = 1 MHz, and 0 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
CT
Trr
5
nS
REV:B
Page 1
QW-G1100
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBQR40-HF)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
100u
10u
1000
100
10
125OC
75OC
1u
100n
25OC
1
10n
1n
C
O
O
C
O
C
5
5
5
2
7
2
-
-25OC
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between
Fig.4 - Current derating curve
terminals characteristics
120
4
3
Mounting on glass epoxy PCBs
f=1MHz
TA=25OC
100
80
60
40
20
0
2
1
0
0
10
20
30
40
0
25
50
75
100
125 150
O
Reverse voltage (V)
Ambient temperature ( C)
REV:B
Page 2
QW-G1100
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
d
P0
P1
T
E
F
Index hole
W
B
Polarity
C
P
A
1
2
0
o
D2
D
D1
W1
Trailer
Device
Leader
.......
.......
.......
.......
.......
.......
.......
.......
Start
End
10 pitches (min)
10 pitches (min)
Direction of Feed
1
2
SYMBOL
A
B
C
d
D
D
D
0402
(mm)
0.75 ± 0.10
1.15 ± 0.10
0.60 ± 0.10
1.55 + 0.10
178 ± 1
60.0 MIN.
13.0 ± 0.20
(SOD-923F)
(inch)
0.026 ± 0.004
0.045 ± 0.004
0.024 ± 0.004
0.061 + 0.004
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
0
1
1
SYMBOL
E
F
P
P
P
T
W
W
0402
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
0.22 ± 0.05
8.00 ± 0.20
13.5 MAX.
(SOD-923F)
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:B
Page 3
QW-G1100
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Marking Code
Marking Code
BC
Park Number
CDBQR40-HF
BC
Suggested PAD Layout
0402/SOD-923F
SIZE
D
A
(mm)
(inch)
A
B
0.750
0.030
E
0.500
0.700
0.020
0.028
C
C
D
E
B
1.250
0.250
0.049
0.010
Standard Package
Qty per Reel
Reel Size
(inch)
Case Type
(Pcs)
0402/SOD-923F
5000
7
REV:B
Page 4
QW-G1100
Comchip Technology CO., LTD.
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