CDBZ0130L-HF_15 [COMCHIP]
Low VF SMD Schottky Barrier Diode;型号: | CDBZ0130L-HF_15 |
厂家: | COMCHIP TECHNOLOGY |
描述: | Low VF SMD Schottky Barrier Diode |
文件: | 总4页 (文件大小:254K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Low VF SMD Schottky Barrier Diode
CDBZ0130L-HF
Io = 100 mA
VR = 30 Volts
RoHS Device
Halogen Free
0201/DFN0603
0.026(0.670)
0.022(0.570)
Features
- Low forward Voltage.
0.015(0.370)
0.011(0.270)
- Ultra small mold type.
Mechanical data
- Case: 0201/DFN0603 package,
molded plastic.
0.013(0.335)
0.010(0.265)
0.012(0.285)
0.008(0.215)
- Terminals: Gold plated, solderable per MIL-STD-750,
0.007(0.175)
0.004(0.105)
method 2026.
- Polarity: Color band denotes cathode end.
- Mounting position: Any
0.011(0.285)
0.008(0.215)
Circuit diagram
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25 ºC unless otherwise noted)
Symbol
Typ
Parameter
Conditions
Min
Max Unit
Reverse voltage
VR
30
V
Average rectified forward current
IO
100
mA
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Forward current,surge peak
(60Hz*1cycle)
IFSM
500
mA
O
Junction temperature
Storage temperature
TJ
+125
+125
C
O
TSTG
-40
C
Electrical Characteristics (at TA=25 ºC unless otherwise noted)
Symbol
Typ
Max Unit
Parameter
Forward voltage
Conditions
Min
-
-
IF = 10 mA
VR = 10 V
VF
0.37
V
-
-
Reverse current
IR
7
µA
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 1
QW-JB039
Comchip Technology CO., LTD.
Low VF SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBZ0130L-HF)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
100
10
10,000
1,000
125°C
100°C
125OC
100OC
100
10
1
75OC
50OC
75°C
50°C
25°C
1
0
25OC
0.1
0
100
200
300
400
500
600
0
5
10
15
20
25
30
Forward Voltage, (mV)
Reverse Voltage, (V)
Fig.3 - Capacitance Between
Fig.4 - Current Derating Curve
Terminals Characteristics
12
9
f = 1 MHz
Ta = 25°C
100
80
7
5
60
40
20
0
3
1
0
25
50
75
100
125
0
5
10
15
20
25
30
O
Reverse Voltage, (V)
Ambient Temperature, ( C)
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 2
QW-JB039
Comchip Technology CO., LTD.
Low VF SMD Schottky Barrier Diode
Reel Taping Specification
d
P0
P1
T
E
F
W
B
A
C
P
1
2
0
o
D2
D
D1
W1
Trailer
Device
.......
Leader
.......
.......
.......
.......
.......
.......
Start
End
.......
10 pitches (min)
10 pitches (min)
Direction of Feed
1
2
SYMBOL
A
C
d
D
D
D
B
0201
(mm)
0.39 +0.03/-0.02
0.36 ± 0.03
1.50 + 0.10
178 ± 1.00
54.4 ± 0.40
13.0 ± 0.20
0.72 ± 0.03
(DFN0603)
(inch)
0.015 +0.001/0.001
0.014 ± 0.001
0.059 + 0.004
7.008 ± 0.039
2.142 ± 0.016
0.512 ± 0.008
0.028 ± 0.001
0
1
1
SYMBOL
E
F
P
P
P
T
W
W
0201
(mm)
1.75 ± 0.10
3.50 ± 0.05
2.00 ± 0.05
4.00 ± 0.05
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.10
12.30 ± 0.10
(DFN0603)
(inch)
0.069 ± 0.004 0.138 ± 0.002 0.079 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.002 0.315 ± 0.008 0.484 ± 0.004
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 3
QW-JB039
Comchip Technology CO., LTD.
Low VF SMD Schottky Barrier Diode
Marking Code
Marking Code
Part Number
L
CDBZ0130L-HF
L
Suggested PAD Layout
0201(DFN0603)
SIZE
E
(mm)
0.310
0.200
(inch)
0.122
0.079
D
A
B
C
C
0.350
0.150
0.365
0.014
0.006
0.014
A
B
D
E
Standard Packaging
Qty Per Reel
Reel Size
(inch)
Case Type
(Pcs)
0201(DFN0603)
8,000
7
REV: B
Company reserves the right to improve product design , functions and reliability without notice.
Page 4
QW-JB039
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