CEFB101-G [COMCHIP]

SMD Efficient Fast Recovery Rectifier; SMD高效快速恢复整流器


型号：	CEFB101-G
厂家：	COMCHIP TECHNOLOGY
描述：	SMD Efficient Fast Recovery Rectifier SMD高效快速恢复整流器
文件：	总2页 (文件大小：127K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Efficient Fast Recovery Rectifier

CEFB101-G Thru CEFB105-G (RoHS Device)

Reverse Voltage: 50 ~ 600 Volts

Forward Current: 1.0 Amp

Features:

Ideal for surface mount applications

Easy pick and place

SMB / DO-214AA

Plastic package has Underwriters Lab.

flammability classification 94V-0.

0.083(2.11)

0.075(1.91)

0.155(3.94)

0.130(3.30)

Super fast recovery time for high efficient

Built-in strain relief

0.185(4.70)

0.160(4.06)

Low forward voltage drop

0.012(0.31)

0.006(0.15)

Mechanical Data:

0.096(2.44)

0.083(2.13)

Case: JEDEC DO-214AA molded plastic

Terminals: solderable per MIL-STD-750,

method 2026

Polarity: Color band denotes cathode end

Approx. Weight: 0.063 gram

0.008(0.20)

0.203(0.10)

0.050(1.27)

0.030(0.76)

0.220(5.59)

0.200(5.08)

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characterics:

Parameter

Max. Repetitive Peak Reverse Voltage

Max. DC Blocking Voltage

Max. RMS Voltage

Symbol CEFB101-G CEFB102-G CEFB103-G CEFB104-G CEFB105-G

Unit

100

200

400

280

600

V_RRM

V_DC

100

200

140

600

420

V_RMS

Peak Surge Forward Current

8.3ms single half sine-wave

superimposed on rate load

(JEDEC method)

I_FSM

Max. Average Forward Current

I_o

1.0

Max. Instantaneous Forward Voltage

at 1.0A

V_F

T_rr

0.875

1.1

1.25

Reverse recovery time

Max. DC Reverse Current at Rated DC

Ta=25^oC

I_R

Blocking Voltage

5.0

200

Ta=100^oC

Max. Thermal Resistance (Note1)

Max. Operating Junction Temperature

Storage Temperature

^oC/W

^oC

150

T_j

^oC

T_STG

-55 to +150

Note1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm²copper pad areas.

“-G” suffix designates RoHS compliant Version

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SMD Efficient Fast Recovery Rectifier

Rating and Characteristic Curves (CEFB101-G Thru CEFB105-G)

Fig.2 - Forward Characteristics

Fig.1- Reverse Characteristics

100

1.0

0.1

CEFB101-G ~ 103-G

CEFB104-G

1.0

CEFB105-G

0.1

0.01

Pulse width 300uS

4% duty cycle

0.01

0.001

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

15 30 45 60 75 90 105 120 135 150

Forward Voltage (V)

Percent of Rated Peak Reverse Voltage (%)

Fig. 3 - Junction Capacitance

Fig.4 - Non Repetitive Forward

Surge Curre

f=1MHz and applied

4VDC reverse voltage

CEFB104-G ~ 105-G

0.01

0.1

1.0

100

Number of Cycles at 60Hz

Fig. 6 - Current Derating Curve

Fig.5 - Test Circuit Diagram and Reverse Recovery Time Characteristics

trr

NONINDUCTIVE

D.U.T.

Single Phase

OSCILLISCOPE

Half Wave 60Hz

50 75

100 125 150 175

1cm

Ambient Temperature

SET TIME BASE FOR

50 / 10ns / cm

NOTES: 1. Rise Times = 7ns max., Input Impedance = 1 megohm.22pF.

2. Rise Time = 10ns max., Source Impedance = 50 ohms.

“-G” suffix designates RoHS compliant Version

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