CEFB104 [COMCHIP]

SMD Efficient Fast Recovery Rectifier; SMD高效快速恢复整流器


型号：	CEFB104
厂家：	COMCHIP TECHNOLOGY
描述：	SMD Efficient Fast Recovery Rectifier SMD高效快速恢复整流器
文件：	总2页 (文件大小：71K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSMMDD EEffffiicciieenntt FFaasstt RReeccoovveerryy RReeccttiiffiieerr

CCOOMMCCHHIIPP

www.comchip.com.tw

CEFB101 Thru CEFB105

Reverse Voltage: 50 - 600 Volts

Forward Current: 1.0 Amp

Features

Ideal for surface mount applications

Easy pick and place

SMB/DO-214AA

Plastic package has Underwriters Lab.

flammability classification 94V-0

0.083(2.11)

0.075(1.91)

0.155(3.94)

0.130(3.30)

Super fast recovery time for high efficient

Built-in strain relief

Low forward voltage drop

0.185(4.70)

0.160(4.06)

0.012(0.31)

0.006(0.15)

Mechanical Data

0.096(2.44)

0.083(2.13)

Case: JEDEC DO-214AA molded plastic

0.008(0.20)

0.203(0.10)

0.050(1.27)

0.030(0.76)

Terminals: solderable per MIL-STD-750,

method 2026

0.220(5.59)

0.200(5.08)

Polarity: Color band denotes cathode

end

Dimensions in inches and (millimeter)

Mounting position: Any

Approx. Weight:0.093 gram

Maximum Ratings and Electrical Characterics

CEFB

101

CEFB

102

CEFB

103

CEFB

104

CEFB

105

Unit

Symbol

VRRM

VDC

Parameter

600

420

200

140

400

280

100

Max. Repetitive PeakReverse Voltage

Max. DC BlockingVoltage

Max. RMS Voltage

VRMS

Peak Surge ForwardCurrent

8.3ms single halfsine-wave

superimposed on rateload

( JEDEC method)

IFSM

I o

1.0

Max. Average Forward Current

Max. Instantaneous ForwardCurrent

at 1.0 A

0.875

1.1

1.25

V F

Trr

Reverse recovery time

Max. DC ReverseCurrent at RatedDC

I R

5.0

Blocking Voltage

Ta=25 C

Ta=100C

250

Max. Thermal Resistance(Note 1)

Operating Junction Temperature

Storage Temperature

C/W

- 5 5 t o + 1 5 0

T j

- 5 5 t o + 1 5 0

TSTG

Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.

Page 1

MDS0208004C

SSMMDD EEffffiicciieenntt FFaasstt RReeccoovveerryy RReeccttiiffiieerr

CCOOMMCCHHIIPP

www.comchip.com.tw

Rating and Characteristic Curves (CEFB101 Thru CEFB105)

Fig. 1 - Reverse Characteristics

Fig.2 - Forward Characteristics

100

CEFB101-103

Tj=125 C

CEFB104

1.0

Tj=75 C

1.0

0.1

CEFB105

Tj=25 C

0.01

0.1

Tj=25 C

Pulse width 300uS

4% duty cycle

0. 01

0.001

15 30 45 60 75 90 105 120 135 150

0.2

0.4

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Forward Voltage (V)

Percent of RatedPeak Reverse Voltage (%)

Fig. 3 - Junction Capacitance

Fig. 4 - Non Repetitive Forward

Surge Current

8.3mS Single HalfSine

Wave JEDEC methode

f=1MHz and applied

4VDC reverse voltage

Tj=25 C

CEFB101-103

Tj=25 C

CEFB104-105

0.01

0.1

1.0

100

1 00

Reverse Voltage (V)

Number of Cyclesat 60Hz

Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics

Fig. 6 - Current Derating Curve

2.8

trr

10W

NONINDUCTIVE

2.4

2.0

1.6

1.2

NONINDUCTIVE

+0.5A

(

)

(+)

D.U.T.

25Vdc

PULSE

GENERATOR

(NOTE 2)

(approx.)

-0.25A

(

)

(+)

Single Phase

0.8

OSCILLISCOPE

(NOTE 1)

NON-

Half Wave 60Hz

INDUCTIVE

0.4

NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.

2. Rise Time= 10ns max., Source Impedance= 50 ohms.

-1.0A

100 125 150 175

1cm

Ambient Temperature ( C)

SET TIME BASE FOR

50 / 10ns / cm

Page 2

MDS0208004C

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