CEFB201-G_12 [COMCHIP]

SMD Efficient Fast Recovery Rectifiers; SMD高效快速恢复二极管


型号：	CEFB201-G_12
厂家：	COMCHIP TECHNOLOGY
描述：	SMD Efficient Fast Recovery Rectifiers SMD高效快速恢复二极管二极管快速恢复二极管
文件：	总2页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Efficient Fast Recovery Rectifiers

CEFB201-G Thru. CEFB205-G

Reverse Voltage: 50 to 600 Volts

Forward Current: 2.0 Amp

RoHS Device

Features

DO-214AA (SMB)

-Ideal for surface mount applications.

-Easy pick and place.

0.185(4.70)

0.160(4.06)

-Plastic package has Underwriters Lab.

flammability classification 94V-0.

0.155(3.94)

0.130(3.30)

0.083(2.11)

0.075(1.91)

-Super fast recovery time for high efficient.

-Built-in strain relief.

-Low forward voltage drop.

0.220(5.59)

0.200(5.08)

0.012(0.31)

0.006(0.15)

Mechanical data

-Case: JEDEC DO-214AA, molded plastic.

0.096(2.44)

0.083(2.13)

-Terminals: solderable per MIL-STD-750,

method 2026.

0.008(0.20)

0.004(0.10)

0.050(1.27)

0.030(0.76)

-Polarity: Color band denotes cathode end.

-Approx. weight: 0.093 grams

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

Parameter

Symbol CEFB201-G CEFB202-G CEFB203-G CEFB204-G CEFB205-G Units

Max. repetitive peak reverse voltage

Max. DC blocking voltage

Max. RMS voltage

VRRM

VDC

100

200

140

400

280

600

420

VRMS

Peak surge forward current, 8.3ms

single half sine-wave superimposed

on rate load (JEDEC method)

IFSM

2.0

Max. average forward current

Max. instantaneous forward voltage at

2.0A

Trr

0.875

1.1

1.25

Reverse recovery time

Max. DC reverse current at TA=25 ^OC

rated DC blocking voltage TA=100 ^OC

5.0

250

μA

RθJL

150

Max. thermal resistance (Note 1)

Max. operating junction temperature

Storage temperature

^OC/W

^OC

TSTG

-55 to +150

Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper pad area.

REV:A

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SMD Efficient Fast Recovery Rectifiers

RATING AND CHARACTERISTIC CURVES (CEFB201-G thru CEFB205-G)

Fig.1 Reverse Characteristics

Fig.2 Forward Characteristics

100

CEFB201-G~203-G

CEFB204-G

TJ=125 ^OC

CEFB205-G

0.1

0.01

TJ=75 ^O

TJ=25 ^O

0.1

TJ=25 ^O

Pulse width 300μS

4% duty cycle

0.01

0.001

0.4

0.8

1.2

1.6

2.0

100

120

140

Forward Voltage (V)

Percent of Rated Peak Reverse Voltage (%)

Fig.3 Junction Capacitance

Fig.4 Non-repetitive Forward Surge Current

200

100

TJ=25 ^O

8.3ms single half sine

wave, JEDEC method

TJ=25 ^O

f=1MHz and applied

4VDC reverse voltage

0.1

100

Reverse Voltage (V)

Number of Cycles at 60Hz

Fig.6 Current Derating Curve

Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics

2.8

2.4

2.0

1.6

1.2

0.8

0.4

trr

50Ω

10Ω

NONINDUCTIVE

+0.5A

(-)

(+)

D.U.T.

25Vdc

(approx.)

(-)

PULSE

GENERATOR

(NOTE 2)

-0.25A

(+)

Single phase

1Ω

NON-

OSCILLLISCOPE

(NOTE 1)

Half wave 60Hz

INDUCTIVE

NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.

2. Rise time=10ns max., input impedance=50Ω.

-1.0A

100

125

150

175

1cm

Ambient Temperature ( ^OC)

Set time base for

50 / 10nS / cm

REV:A

Page 2

QW-BE004

Comchip Technology CO., LTD.

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