CEFM105-G [COMCHIP]
SMD Efficient Fast Recovery Rectifier; SMD高效快速恢复整流器
| 型号： | CEFM105-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Efficient Fast Recovery Rectifier |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Efficient Fast Recovery Rectifier
CEFM101-G Thru CEFM105-G (RoHS Device)
Reverse Voltage: 50 ~ 600 Volts
Forward Current: 1.0 Amp
Features:
Ideal for surface mount applications
Easy pick and place
MINI SMA
Plastic package has Underwriters Lab.
flammability classification 94V-0.
Built-in strain relief
0.161 (4.10)
0.146 (3.70)
0.012 (0.30) Typ.
0.071 (1.80)
0.055 (1.40)
Super fast recovery time for high efficient
Low forward voltage drop
0.110 (2.80)
0.094 (2.40)
Mechanical Data:
Case: Mini-SMA/SOD-123 molded plastic
Terminals: solderable per MIL-STD-750,
0.063 (1.60)
0.055 (1.40)
0.035 (0.90) Typ.
0.035 (0.90) Typ.
method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Dimensions in inches and (millimeter)
Approx. Weight: 0.04 gram
Maximum Ratings and Electrical Characterics:
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Symbol CEFM101-G CEFM102-G CEFM103-G CEFM104-G CEFM105-G
Unit
V
50
100
200
400
400
280
600
VRRM
VDC
V
50
35
100
70
200
140
600
420
VRMS
V
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
IFSM
A
30
A
V
Max. Average Forward Current
Io
1.0
Max. Instantaneous Forward Voltage
at 1.0A
VF
Trr
0.875
25
1.1
35
1.25
50
Reverse recovery time
nS
Max. DC Reverse Current at Rated DC
Ta=25oC
IR
uA
Blocking Voltage
5.0
250
Ta=100oC
R
Max. Thermal Resistance (Note1)
Max. Operating Junction Temperature
Storage Temperature
oC/W
oC
42
JL
Tj
-55 to +155
-55 to +150
oC
TSTG
Note1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
“-G” suffix designates RoHS compliant Version
Page1
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SMD Efficient Fast Recovery Rectifier
Rating and Characteristic Curves (CEFM101-G thru CEFM105-G)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
100
10
CEFM101-G-103-G
Tj=125 C
Tj=75 C
CEFM104-G
10
1.0
1.0
0.1
CEFM105-G
Tj=25 C
0.01
0.001
0.1
Tj=25 C
Pulse width 300uS
4% duty cycle
0. 01
0
15 30 45 60 75 90 105 120 135 150
0
0.2
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig. 3 - Junction Capacitance
Fig.4 - Non Repetitive Forward
Surge Curre
35
50
8.3mS Single HalfSine
Wave JEDEC methode
f=1MHz and applied
4VDC reverse voltage
30
25
20
15
10
5
40
30
Tj=25 C
CEFM101-103
Tj=25 C
20
CEFM104-105
10
0
0
0.01
0.1
1.0
10
100
1
5
10
50
1 00
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
1.4
trr
50
10
1.2
1.0
0.8
0.6
NONINDUCTIVE
NONINDUCTIVE
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|
|
|
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+0.5A
(
)
(+)
0
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
-0.25A
(
)
(+)
Single Phase
0.4
1
OSCILLISCOPE
(NOTE 1)
NON-
Half Wave 60Hz
0.2
INDUCTIVE
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
0
0
25
50
75
100 125 150 175
1cm
Ambient Temperature ( C)
SET TIME BASE FOR
50 / 10ns / cm
“-G” suffix designates RoHS compliant Version
Page2
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SCHURTER
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