CFRL105 [COMCHIP]
SMD Fast Recovery Rectifier; 贴片快恢复整流二极管
| 型号： | CFRL105 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Fast Recovery Rectifier |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSMMDD FFaasstt RReeccoovveerryy RReeccttiiffiieerr
CCOOMMCCHHIIPP
www.comchiptech.com
CFRL101 Thru CFRL107
Reverse Voltage: 50 - 1000 Volts
Forward Current: 1.0 Amp
Features
DO-213AB (Plastic Melf)
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Fast recovery time: 150 - 500 nS
0.205(5.2)
0.195(4.8)
0.022(0.55)
Max.
Low leakage current
Mechanical data
Case: DO-213AB molded plastic
0.105(2.67)
0.095(2.40)
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight: 0.116 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
CFRL
101
CFRL
102
CFRL
103
CFRL
104
CFRL
105
CFRL
106
CFRL
107
Unit
Symbol
VRRM
VDC
Parameter
200
200
140
400
400
280
600
600
420
50
50
35
800
800
560
1000
1000
700
Max. Repetitive PeakReverse Voltage
Max. DC BlockingVoltage
Max. RMS Voltage
100
100
70
V
V
V
VRMS
Peak Surge ForwardCurrent
8.3ms single halfsine-wave
superimposed on rateload
( JEDEC method)
IFSM
A
30
I o
1.0
Max. Average Forward Current
A
Max. Instantaneous ForwardCurrent
at 1.0 A
1.3
V F
V
Trr
Reverse recovery time
100
nS
250
500
Max. DC ReverseCurrent at RatedDC
I R
5.0
50
Blocking Voltage
Ta=25 C
Ta=100C
uA
42
R
JA
Max. Thermal Resistance(Note 1)
Operating Junction Temperature
Storage Temperature
C/W
- 5 5 t o + 1 5 0
T j
C
- 5 5 t o + 1 5 0
TSTG
C
Note 1: Thermal resistance from junction to ambient.
Page 1
MDS0210005B
SSMMDD FFaasstt RReeccoovveerryy RReeccttiiffiieerr
CCOOMMCCHHIIPP
www.comchiptech.com
Rating and Characteristic Curves (CFRL101 Thru CFRL107)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
1000
100
Tj=125 C
10
100
10
1
Tj=25 C
0.1
1.0
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
0
0.01
20
40
60
80 100 120 140
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage (V)
Percent of RatedPeak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward
Surge Current
35
30
25
20
50
8.3mS Single HalfSine
Wave JEDEC methode
=1MHz and applied
4VDC reverse voltage
40
30
Tj=25 C
15
20
10
10
5
0
0
0.01
0.1
1.0
10
100
1
5
10
50
1 00
Reverse Voltage (V)
Number of Cyclesat 60Hz
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
1.4
trr
50
W
10W
NONINDUCTIVE
1.2
1.0
0.8
0.6
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
(
)
(+)
0
D.U.T.
25Vdc
PULSE
GENERATOR
(NOTE 2)
(approx.)
-0.25A
(
)
(+)
Single Phase
0.4
1W
OSCILLISCOPE
(NOTE 1)
NON-
Half Wave 60Hz
INDUCTIVE
0.2
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
0
0
25
50
75
100 125 150 175
1cm
Ambient Temperature ( C)
SET TIME BASE FOR
50 / 10ns / cm
Page 2
MDS0210005B
相关型号：
©2020 ICPDF网 联系我们和版权申明