CJ3134K-HF [COMCHIP]

MOSFET;
CJ3134K-HF
型号: CJ3134K-HF
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

MOSFET

文件: 总4页 (文件大小:100K)
中文:  中文翻译
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MOSFET  
Comchip  
S M D D i o d e S p e c i a l i s t  
CJ3134K-HF  
N-Channel  
RoHS Device  
Halogen Free  
V(BR)DSS  
RDS(ON)MAX  
380mΩ@4.5V  
450mΩ@2.5V  
800mΩ@1.8V  
ID  
SOT-723  
0.011(0.27)  
0.007(0.17)  
20V  
0.75A  
1
0.049(1.25) 0.031(0.80)  
0.045(1.15) Typ.  
0.015(0.37)  
0.011(0.27)  
3
2
Features  
- Lead free product is acquired  
- Surface mount package  
0.033(0.85)  
0.030(0.75)  
0.049(1.25)  
0.045(1.15)  
- N-Channel switch with low RDS(on)  
- Operated at low logic level gate drive  
0.020(0.50)  
0.017(0.43)  
0.002(0.05)  
Max.  
0.006(0.15)  
0.003(0.08)  
Mechanical data  
- Case: SOT-723, molded plastic.  
- Terminals: Solderable per MIL-STD-750,  
method 2026.  
Dimensions in inches and (millimeter)  
Marking: KF  
Circuit Diagram  
1. G : Gate  
2. S : Source  
3. D : Drain  
D
S
3
KF  
G
1
2
Maximum Rating (at Ta=25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Drain-Source voltage  
Gate-Source voltage  
VDS  
VGS  
ID  
20  
±12  
V
V
Continuous drain current (note1)  
0.75  
A
Pulsed drain current (tp=10µs)  
IDM  
PD  
1.8  
Power dissipation (note1)  
150  
mW  
°C/W  
°C  
Thermal resistance from junction to ambient (note1)  
Junction temperature range  
RΘJA  
TJ  
833  
150  
Storage temperature range  
TSTG  
TL  
-55 to +150  
260  
°C  
Lead temperature for soldering purposes (1/8” from case for 10 s)  
°C  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 1  
QW-JTR14  
Comchip Technology CO., LTD.  
MOSFET  
Comchip  
S M D D i o d e S p e c i a l i s t  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Typ  
Parameter  
Conditions  
Min  
Max  
Unit  
Static Characteristics  
Drain-source breakdown voltage  
VGS =0V , ID=250µA  
VDS =20V , VGS=0V  
VGS=±12V , VDS =0V  
VDS =VGS , ID=250µA  
VGS=4.5V , ID=0.65A  
VGS=2.5V , ID=0.55A  
VGS=1.8V , ID=0.45A  
VDS=10V , ID=0.8A  
IS=0.15A , VGS=0V  
V(BR) DSS  
20  
V
Zero gate voltage drain current  
Gate-body leakage current  
µA  
µA  
IDSS  
IGSS  
1
±50  
1
Gate-threshold voltage (note 2)  
VGS(th)  
0.35  
V
380  
450  
800  
Drain-source on-state resistance (note 2)  
RDS(on)  
mΩ  
gFS  
Forward transconductance (note 2)  
Diode forward voltage  
1.6  
S
V
VSD  
1.2  
Dynamic Characteristics (note 4)  
Input capacitance  
ciss  
Coss  
Crss  
79  
13  
9
120  
20  
Output capacitance  
pF  
nS  
VDS=16V , VGS=0V, f=1MHZ  
Reverse transfer capacitance  
Switching Characteristics (note 4)  
15  
Turn-on delay time (note 3)  
Turn-on rise time (note 3)  
Turn-off delay time (note 3)  
td(on)  
6.7  
4.8  
VGS=4.5V , VDS=10V  
ID=500mA , RGEN=10Ω  
tr  
td(off)  
17.3  
7.4  
Turn-off fall time (note 3)  
tf  
Notes:  
1. Surface mounted on FR4 board using the minimum recommended pad size.  
2. Pulse test: Pulse width=300µs, Duty cycle=2%  
3. Switching characteristics are independent of operating junction temperatures.  
4. Guaranteed by design, not subject to producting.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 2  
QW-JTR14  
Comchip Technology CO., LTD.  
MOSFET  
Comchip  
S M D D i o d e S p e c i a l i s t  
RATING AND CHARACTERISTIC CURVES (CJ3134K-HF)  
Fig.1 - Output Characteristics  
Fig.2 - Transfer Characteristics  
4
2.0  
1.6  
1.2  
0.8  
VDS=5.0V  
Pulsed  
3
2
1
0
0.4  
0
0
1
2
3
4
0
0.5  
1.0  
1.5  
2.0  
2.5  
Drain to Soruce Voltage, VDS (V)  
Gate to Source Voltage, VGS (V)  
Fig.4 - RDS(ON) — VGS  
Fig.3 - RDS(ON) — ID  
1.0  
800  
Ta=25°C  
Pulsed  
Ta=25°C  
Pulsed  
700  
600  
500  
400  
300  
200  
100  
0.8  
0.6  
ID=0.65A  
0.4  
0.2  
0
0.3  
0.6  
0.9  
1.2  
1.5  
1.8  
2.1  
1
2
3
4
5
Drain Current, ID (A)  
Gate to Source Voltage, VGS (V)  
Fig.5 - IS — VSD  
Fig.6 - Threshold Voltage  
10  
1
0.8  
0.7  
0.6  
0.5  
Ta=25°C  
Pulsed  
ID=250uA  
0.1  
0.01  
1E-3  
1E-4  
0.4  
0.3  
25  
50  
75  
100  
125  
0
0.4  
0.8  
1.2  
1.8  
2.0  
2.4  
Source to Drain Voltage, VSD (V)  
Junction Temperature, TJ (°C)  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 3  
QW-JTR14  
Comchip Technology CO., LTD.  
MOSFET  
Comchip  
S M D D i o d e S p e c i a l i s t  
Suggested PAD Layout  
SOT-723  
SIZE  
B
(mm)  
0.30  
0.42  
0.32  
(inch)  
0.012  
0.017  
0.013  
A
A
B
C
D
E
A
0.80  
1.00  
0.031  
0.039  
C
E
D
Standard Packaging  
Qty Per Reel  
Case Type  
Reel Size  
(inch)  
(Pcs)  
SOT-723  
8,000  
7
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
QW-JTR14  
Page 4  
Comchip Technology CO., LTD.  

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