CJM1206-G [COMCHIP]

MOSFET;


型号：	CJM1206-G
厂家：	COMCHIP TECHNOLOGY
描述：	MOSFET
文件：	总5页 (文件大小：132K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MOSFET

Comchip

S M D D i o d e S p e c i a l i s t

CJM1206-G (P-Channel )

RoHS Device

V(BR)DSS

RDS(on)MAX

45mΩ @ -4.5V

60mΩ @ -2.5V

90mΩ @ -1.8V

-12V

-6A

DFNWB2*2-6L-J

Features

- P-Channel -12V(D-S) power MOSFET

- Advanced trench MOSFET process technology

- Ultra low on-resistance with low gate charge

0.082(2.076)

0.076(1.924)

0.082(2.076)

0.076(1.924)

Mechanical data

- Case: DFNEB2*2-6L-J, molded plastic.

0.002(0.05)

0.000(0.00)

0.026(0.65)TYP.

0.035(0.90)

0.028(0.70)

0.008(0.20)

REF.

Circuit diagram

- 1. DRAIN

- 2. DRAIN

- 3. GATE

- 4. SOURCE

- 5. DRAIN

- 6. DRAIN

0.008(0.20)

0.013(0.326)

0.007(0.174)

MIN.

0.026(0.66)

0.018(0.46)

0.041(1.05)

0.033(0.85)

0.008(0.40)

0.016(0.20)

0.039(1.00)

0.031(0.80)

0.014(0.35)

0.010(0.25)

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25 °C unless otherwise noted)

Symbol

Parameter

Value

Unit

Drain-source voltage

Gate-source voltage

VDS

VGS

-12

±8

-6

Drain current-continuous

Drain current-pulsed

IDM*

-20

Power dissipation

RΘJA

2.5

°C/W

°C

Thermal resistance from junction to ambient

Junction temperature range

Storage temperature range

357

-40 to +150

-55 to +150

TSTG

°C

* Repetitive rating: Pluse width limited by junction temperature

Company reserves the right to improve product design , functions and reliability without notice.

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Page 1

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MOSFET

Comchip

S M D D i o d e S p e c i a l i s t

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Conditions

Min

Max

Unit

Static characteristics

Drain-source breakdown voltage

VGS = 0V , ID = -250µA

VDS = VGS , ID = -250µA

VDS = 0V , VGS = ±8V

V(BR) DSS

VGS(th)

-12

Gate-source threshold voltage

Gate-source leakage current

Zero gate voltage drain current

-0.5

-0.9

±100

-1

IGSS

IDSS

µA

VDS = -8V , VGS = 0V

VGS = -4.5V , ID = -3.5A

Drain-source on-resistance (note 1)

Forward transconductance (note 1)

RDS(on)

VGS = -2.5V , ID = -3A

mΩ

VGS = -1.8V , ID = -2.0A

VDS = -5V , ID = -4.1A

gfs

Dynamic characteristics

Input capacitance (note 2,3)

ciss

Coss

Crss

740

290

190

VDS = -4V , VGS = 0V

f = 1MHZ

Output capacitance (note 2,3)

Reverse transfer capacitance (note 2,3)

VDS = -4V , VGS = -4.5V,

ID = -4.1A,

7.8

Total gate charge (note2)

1.2

1.6

Ω

VDS = -4V , VGS = -2.5A

ID = -4.1A

Gate-source charge (note2)

Gate-drain charge (note2)

Gate-resistance (note2,3)

Trun-on delay time (note2,3)

Rise time (note2,3)

Qgs

Qgd

f = 1MHz

1.4

td(on)

VDD = -4V

RL = 1.2Ω , ID ≈ -3.3A

VGEN = -4.5V , Rg = 1Ω

Trun-off delay time (note2,3)

Fall time (note2,3)

td(off)

Turn-on delay time (note2,3)

Rise time (note2,3)

td(on)

VDD = -4V

RL = 1.2Ω , ID ≈ -3.3A

Turn-off delay time (note2,3)

Fall time(note2,3)

td(off)

VGEN = -8V , Rg = 1Ω

Drain-source body diode characteristics

Continuous source-drain diode current

-6

Pulse diode forward current (note1)

Body ciode voltage

Note:

IsM

-20

VSD

IF = -3.3A

-1.2

1.Pulse test; pulse width≤300µs, Duty cycle≤2%

2. Guaranteed by design, not subject to production testing.

3. These parameters have no way to verify.

Company reserves the right to improve product design , functions and reliability without notice.

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MOSFET

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S M D D i o d e S p e c i a l i s t

RATING AND CHARACTERISTIC CURVES (CJM1206-G)

Fig.1 - Output Characteristics

Fig.2 - Transfer Characteristics

-16

-12

-8

-5

-4

-3

-2

-1

-0

VDS = -3V

VGS = -4.5V, -4V, -3.5V, -3V, -2.5V

VGS = -2V

Ta=100°C

Pulsed

Ta=25°C

Pulsed

VGS = -1.5V

-4

-0

-1

-2

-3

-4

-0

-0.5

-1.0

-1.5

-2.0

Drain to Soruce Voltage, VDS (V)

Gate to Source Voltage, VGS (V)

Fig.4 - RDS(ON) — VGS

Fig.3 - RDS(ON) — I

200

180

Ta=25°C

Pulsed

150

120

100

ID = -3.3A

VGS = -1.8V

Ta=100°C

Pulsed

VGS = -2.5V

Ta=25°C

Pulsed

VGS = -4.5V

-0

-2

-4

-6

-0

-2

-4

-6

-8

-10

-12

Drain Current, ID (A)

Gate to Source Voltage, VGS (V)

Fig.6 - Threshold Voltage

Fig.5 - I

— VSD

-10

-1.0

-0.8

ID = -250uA

-0.6

-0.4

-1

Ta=100°C

Pulsed

Ta=25°C

Pulsed

-0.2

-0.1

-0

-0.2 -0.4

-0.8

-1.2

-1.6

-2.0

100

125

Source to Drain Voltage, VSD (V)

Ambient Temperature, Ta (°C)

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

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Comchip Technology CO., LTD.

MOSFET

Comchip

S M D D i o d e S p e c i a l i s t

Reel Taping Specification

Trailer Tape

Leader Tape

100± Empty pockets

Components

100± Empty pockets

SYMBOL

180.00 + 0.00

- 3.00

(mm)

2.30 ± 0.05

1.10 ± 0.05

1.50 ± 0.10

60.00 ± 0.50

13.00 ± 0.20

DFNWB2X2-6L-J

7.087 + 0.000

- 0.118

(inch)

0.091 ± 0.002

0.043 ± 0.002

0.059 ± 0.004

2.362 ± 0.002

0.512 ± 0.008

SYMBOL

8.00 + 0.30

- 0.10

(mm)

1.75 ± 0.10

3.50 ± 0.10

4.00 ± 0.10

2.00 ± 0.10

13.10 ± 1.30

0.315 + 0.012

- 0.004

(inch)

0.069 ± 0.004

0.138 ± 0.004

0.157 ± 0.004

0.079 ± 0.004

0.518 ± 0.051

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 4

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Comchip Technology CO., LTD.

MOSFET

Comchip

S M D D i o d e S p e c i a l i s t

Marking Code

Pin 1

Marking Code

1206

Part Number

1206

CJM1206-G

Pin 1

Suggested PAD Layout

DFNWB2X2-6L-J

SIZE

(mm)

(inch)

PKG.

2.30

0.091

1.40

1.05

0.055

0.041

1.00

0.40

0.66

0.45

0.039

0.016

0.026

0.018

B C

0.40

0.65

0.016

0.026

Standard Packaging

Qty Per Reel

Reel Size

(inch)

Case Type

(Pcs)

DFNWB2X2-6L-J

8,000

Company reserves the right to improve product design , functions and reliability without notice.

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