EF1G [COMCHIP]

Efficient Fast Recovery Rectifier; 高效快速恢复整流器


型号：	EF1G
厂家：	COMCHIP TECHNOLOGY
描述：	Efficient Fast Recovery Rectifier 高效快速恢复整流器整流二极管
文件：	总2页 (文件大小：82K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Efficient Fast Recovery Rectifier

CCOOMMCCHHIIPP

www.comchip.com.tw

EF1A Thru EF1J

Reverse Voltage: 50 - 600 Volts

Forward Current: 1.0 Amp

DO-41

Features

Plastic package has Underwriters Lab.

flammability classification 94V-0

1.0 (25.4)

Min.

Super fast recovery time for high efficient

Built-in strain relief

0.107 (2.7)

0.080 (2.0)

Dia.

Low forward voltage drop

0.205 (5.2)

0.160 (4.1)

Mechanical Data

Case: JEDEC DO-41 molded plastic body

Terminals: solderable per MIL-STD-750,

1.0 (25.4)

Min.

method 2026

0.034 (0.86)

0.028 (0.71)

Dia.

Polarity: Color band denotes cathode end

Mounting position: Any

Weight: 0.34 g

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characterics

EF1A

EF1B

EF1 D

EF1G

EF1J

600

420

Unit

Symbol

VRRM

VDC

Parameter

200

140

400

280

100

Max. Repetitive PeakReverse Voltage

Max. DC BlockingVoltage

Max. RMS Voltage

VRMS

Peak Surge ForwardCurrent

8.3ms single halfsine-wave

superimposed on rateload

( JEDEC method)

IFSM

I o

1.0

Max. Average Forward Current

Max. Instantaneous ForwardCurrent

at 1.0 A

0.875

1.1

1.25

V F

Trr

Reverse recovery time

Max. DC ReverseCurrent at RatedDC

I R

5.0

Blocking Voltage

Ta=25 C

Ta=100C

250

Max. Thermal Resistance(Note 1)

Operating Junction Temperature

Storage Temperature

C/W

- 5 5 t o + 1 5 0

T j

- 5 5 t o + 1 5 0

TSTG

Page 1

MDS0312011A

Efficient Fast Recovery Rectifier

CCOOMMCCHHIIPP

www.comchip.com.tw

Rating and Characteristic Curves (EF1A Thru EF1J)

Fig. 1 - Reverse Characteristics

Fig.2 - Forward Characteristics

100

EF1A-EF1D

Tj=125 C

EF1G

1.0

Tj=75 C

1.0

0.1

EF1J

Tj=25 C

0.01

0.1

Tj=25 C

Pulse width 300uS

4% duty cycle

0. 01

0.001

15 30 45 60 75 90 105 120 135 150

0.2

0.4

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Forward Voltage (V)

Percent of RatedPeak Reverse Voltage (%)

Fig. 3 - Junction Capacitance

Fig. 4 - Non Repetitive Forward

Surge Current

8.3mS Single HalfSine

Wave JEDEC methode

f=1MHz and applied

4VDC reverse voltage

Tj=25 C

EF1A-EF1D

Tj=25 C

EF1G-EF1J

0.01

0.1

1.0

100

1 00

Reverse Voltage (V)

Number of Cyclesat 60Hz

Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics

Fig. 6 - Current Derating Curve

2.8

trr

10W

NONINDUCTIVE

2.4

2.0

1.6

1.2

NONINDUCTIVE

+0.5A

(

)

(+)

D.U.T.

25Vdc

PULSE

GENERATOR

(NOTE 2)

(approx.)

-0.25A

(

)

(+)

Single Phase

0.8

OSCILLISCOPE

(NOTE 1)

NON-

Half Wave 60Hz

INDUCTIVE

0.4

NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.

2. Rise Time= 10ns max., Source Impedance= 50 ohms.

-1.0A

100 125 150 175

1cm

Ambient Temperature ( C)

SET TIME BASE FOR

50 / 10ns / cm

Page 2

MDS0312011A

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