MP1001 [COMCHIP]
Silicon Bridge Rectifiers; 硅桥式整流器
| 型号： | MP1001 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Silicon Bridge Rectifiers |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Bridge Rectifiers
CCOOMMCCHHIIPP
www.comchiptech.com
MP1000 Thru 1010
Reverse Voltage: 50 - 1000 Volts
Forward Current: 10 Amp
Features
- Diffused Junction
- High Current Capability
- High Case Dielectric Strength
- High Surge Current Capability
- Ideal for Printed Circuit Board Application
- Plastic Material has Underwriters
Laboratory Flammability Classification
94V-O
MP-10
H
J
MP-10
Min
+
~
-
G
Dim
A
Max
15.75
6.90
-
14.73
5.80
A
B
E
C
19.00
~
D
1.00 Ø Typical
5.11 6.14
Hole for # 6 screw
Mechanical Data
- Case: Molded Plastic
E
E
G
- Terminals: Plated Leads Solderable per MIL
STD-202, Method 208
D
3.60
4.00
C
B
H
J
10.30
11.30
2.38 x 45oC Typical
- Weight: 5.4 grams (approx.)
- Mounting Position: Through Hole for #6
Screw
All Dimensions in mm
Metal Heat Sink
- Mounting Torque: 5.0 Inch-pounds Maximum
Maximum Ratings and Electrical Characterics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MP
MP
MP
MP
MP
MP
MP
CHARACTERISTICS
Peak Repetitive Reverse Voltage
Symbol
UNIT
1000 1001 1002 1004 1006 1008 1010
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800 1000
560 700
V
Working Peak Reverse Voltage
DC Blocking Voltage
VR(RMS)
IO
RMS Reverse Voltage
280
10
V
A
Average Rectified Output Current (Note1) @ TA = 50°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
200
A
Forward Voltage (per element) @IF = 5.0A
VFM
IR
1.1
10
1.0
V
Peak Reverse Current
@TC = 25°C
uA
mA
A2s
pF
At Rated DC Blocking Voltage @TC = 100°C
I2t Rating for Fusing (t < 8.3ms) (Note2)
Typical Junction Capacitance (Note3)
I2t
Cj
64
110
7.5
R
Typical Thermal Resistance (Note4)
K/W
°C
JC
Tj, TSTG
-65 to +150
Operating and Storage Temperature Range
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.
2. Thermal resistance junction to ambient mounted on PC board with 13.0 x 13.0 x 0.03mm thick land areas.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
4. Thermal resistance junction to case per element.
Page 1
MDS0309003A
Silicon Bridge Rectifiers
CCOOMMCCHHIIPP
www.comchiptech.com
Rating and Characteristic Curves (MP1000 thru 1010)
10
10
8
Resistive or
Inductive load
1.0
6
4
0.1
oo
Tj = 25 C
PPuullssee wwiiddtthh == 330000uuSS
2
0
0.01
25
50
75
100
125
0
0.4
0.8
1.2
1.6
TA, Ambient Temperature (oC)
VF, Instantaneous Forward Voltage (V)
240
200
160
10
o
Tc = 50
C
Single half sine-wave
JEDEC method
Tj =100o
C
1.0
120
80
0.1
40
0
o
Tj =25
C
0.01
1.0
10
100
00
4400
8800
112200
Number of Cycles at 60Hz
Percent of Rated Peak Reverse Voltage (%)
Page 2
MDS0309003A
©2020 ICPDF网 联系我们和版权申明