2N1671 [COMSET]

PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS; PN BAR型硅单结晶体管


型号：	2N1671
厂家：	COMSET SEMICONDUCTOR
描述：	PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS PN BAR型硅单结晶体管晶体晶体管单结晶体管开关
文件：	总2页 (文件大小：281K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N1671 – 2N1671A – 2N1671B

PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS

They are designed for medium-power switching, oscillator and pulse timing circuits.

Package outline is similar to TO-5 except

•

Highly Stable Negative Resistance and Firing Voltage

Low Firing Current

High Pulse Curent Capabilities

Simplified Circuit Design

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

2N1671

Base 1 – Emitter Reverse Voltage

Base 2 – Emitter Reverse Voltage

Interbase Voltage

2N1671A

2N1671B

2N1671

V_B1E

V_B2E

V_B1B2

I_FRMS

I_EM

2N1671A

2N1671B

2N1671

2N1671A

2N1671B

2N1671

RMS Emitter Current

2N1671A

2N1671B

2N1671

Emitter Peak Current

2N1671A

2N1671B

2N1671

450

Total Power Dissipation

Maximum Junction

2N1671A

2N1671B

2N1671

P_TOT

T_J

2N1671A

2N1671B

2N1671

150

°C

Storage Temperature Range

2N1671A

2N1671B

T_STG

-55 to +150

This data guaranteed in addition to JEDEC registered data

COMSET SEMICONDUCTORS

1/2

2N1671 – 2N1671A – 2N1671B

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Test Condition(s)

Symbol

Ratings

Min Typ Mx Unit

2N1671

-12

-0.2

_B2E=30 V, I_B1= 0

Emitter Reverse Current

2N1671A

2N1671B

2N1671

I_EB2O

µA

_B2B1= 10 V, I_E= 50 mA

_B2B1= 3 V, , I_E= 0

_B2B1= 10 V

Emitter saturation Voltage

Interbase Resistance

Intrinsic stand-off ratio

Valley Current

2N1671A

2N1671B

2N1671

V_EB1(sat)

R_BBO

4.7

9.1

0.62

2N1671A 4.7

2N1671B 4.7

2N1671 0.47

2N1671A 0.47

2N1671B 0.47

I_V

I_P

2N1671

_B2B1= 10 V, R_B2= 100

_B2B1= 25 V

2N1671A

2N1671B

2N1671

µA

Peak Current

2N1671A

2N1671B

MECHANICAL DATA CASE TO-5

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

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COMSET SEMICONDUCTORS

2/2

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