2N3019 [COMSET]

SILICON PLANAR EPITAXIAL TRANSISTORS; 硅平面外延晶体管


型号：	2N3019
厂家：	COMSET SEMICONDUCTOR
描述：	SILICON PLANAR EPITAXIAL TRANSISTORS 硅平面外延晶体管晶体晶体管开关局域网
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NPN 2N3019 – 2N3020

SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case .

They are intended for high-current, high-frequency amplifier applications.

They feature high gain and low saturation voltages.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

2N3019

2N3020

2N3019

2N3020

2N3019

Collector-Emitter Voltage

Collector-Base Voltage

V_CEO

V_CBO

140

Emitter-Base Voltage

Collector Current

V_EBO

I_C

2N3020

2N3019

2N3020

2N3019

2N3020

2N3019

2N3020

2N3019

Total Power Dissipation

Junction Temperature

@ T_amb= 25°

@ T_case= 25°

P_D

T_J

0.8

Watts

200

°C

2N3020

2N3019

2N3020

Storage Temperature range

T_Stg

-65 to +200

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to ambient in

free air

2N3019

2N3020

2N3019

2N3020

R_thJ-a

R_thJ-c

°C/W

Thermal Resistance, Junction to case

219

°C/W

COMSET SEMICONDUCTORS

1/3

NPN 2N3019 – 2N3020

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Test Condition(s)

Symbol

Ratings

Min Typ Mx Unit

2N3019

V_CB=950 V, I_E=0

V_CB=90 V, I_E=0, T_j=150°C

V_EB=5 V, I_C=0

µA

2N3020

2N3019

2N3020

2N3019

2N3020

2N3019

2N3020

2N3019

2N3020

2N3019

2N3020

2N3019

2N3020

2N3019

2N3020

2N3019

2N3020

2N3019

2N3020

2N3019

2N3020

Collector Cutoff Current

I_CBO

Emitter Cutoff Current

I_EBO

Collector Emitter Breakdown

Voltage

Collector Base Breakdown

Voltage

Emitter Base Breakdown

Voltage

I_C=10 mA, I_B=0

140

V_CEO

V_CBO

V_EBO

I_C=100 µA, I_E=0

I_E=100 µA, I_C=0

I_C=0.1 mA, V_CE=10 V

100

120

300

120

I_C=10 mA, V_CE=10 V

I_C=150 mA, V_CE=10 V

I_C=500 mA, V_CE=10 V

I_C=1 A, V_CE=10 V

DC Current Gain

h_FE(1)

100

I_C=150 mA, V_CE=10 V

2N3019

_amb= -55°C

2N3019

2N3020

2N3019

2N3020

I_C=150 mA, I_B=15 mA

I_C=500 mA, I_B=50 mA

I_C=150 mA, I_B=15 mA

0.2

0.5

1.1

Collector-Emitter saturation

Voltage

V_CE(SAT)(1)

Base-Emitter saturation

Voltage

2N3019

V_BE(SAT)(1)

2N3019

2N3020

2N3019

2N3020

100

I_C=50 mA, V_CE=10 V

f = 20 MHz

Transition frequency

MHz

f_T

400

200

I_C=1 mA, V_CE=5 V

f = 1 kHz

Small Signal Current Gain

Noise Figure

h_fe

I_C=-100 µA, V_CE=10 V

f = 1 kHz, R_g= 1kΩ

I_E= 0 ,V_CB=10 V

f = 1 MHz

2N3019

2N3020

2N3019

2N3020

2N3019

2N3020

Collector-Base capacitance

Emitter-Base capacitance

Feedback Time Constant

C_CBO

C_EBO

r_bb’C_b’c

I_C= 0 ,V_EB=0.5 V

f = 1 MHz

I_C=10 mA, V_CE=10 V

f = 4 MHz

400

(1) Pulse conditions : tp < 300 µs, δ =2%

COMSET SEMICONDUCTORS

2/3

NPN 2N3019 – 2N3020

MECHANICAL DATA CASE TO-39

DIMENSIONS (mm)

min typ max

12.7

0.49

6.6

8.5

9.4

5.08

1.2

0.9

45°

Pin 1 :

Pin 2 :

Case :

Emitter

Base

Collector

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

COMSET SEMICONDUCTORS

3/3

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