BD142 [COMSET]
NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS; NPN硅晶体管功率LINERAR和交换应用
| 型号： | BD142 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD142
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING
APPLICATIONS
LF Large Signal Power Amplification
Low Saturation Voltage
High Dissipation Rating
Intended for a wide variety of intermediate-power applications.
It is especially suited for use in audio and inverter circuits at 12 volts.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
45
50
7
Unit
V
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
VCEO
VCBO
VEBO
VCEX
IC
V
V
VBE=-1.5 V
50
15
V
A
Base Current
7
IB
A
Power Dissipation
@ TC = 25°
PT
TJ
117
Watts
Junction Temperature
-65 to +200
°C
Storage Temperature
TS
COMSET SEMICONDUCTORS
1/3
BD142
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
Thermal Resistance, Junction to Case
RthJ-C
1.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
VCEO(BR)
VCEX(BR)
VCE(SAT)
ICEX
Ratings
Min Typ Mx Unit
Collector-Emitter
Breakdown Voltage (*)
IC=200 mA, IB=0
45
50
-
V
V
Collector-Emitter
Breakdown Voltage (*)
IC=100 mA, VBE=-1.5 V
IC=4 A, IB=0.4 A
Collector-Emitter Saturation
Voltage (*)
-
-
-
-
1.1
2
V
Collector-Emitter Cutoff
Current
VCE= 40 V
VBE=-1.5 V
-
mA
mA
V
Emitter-Base Cutoff Current
Base-Emitter Voltage (*)
VEB=7 V
-
1
IEBO
IC=4.0 A, VCE=4.0V
-
1.5
VBE
COMSET SEMICONDUCTORS
2/3
BD142
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
Second Breakdown
collector current
t=1s, VCE=39 V
3
-
-
A
IS/B
VCE=4.0 V, IC=4.0 A
VCE=4.0 V, IC=0.5 A
12.5
20
-
-
160
-
Static Forward Current
Transfer Ratio (*)
-
hFE
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
A
B
C
D
E
G
H
L
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
M
N
P
0,77
0,04
0,16
4,06
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
COMSET SEMICONDUCTORS
3/3
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