BT151 [COMSET]
THYRISTORS; 晶闸管
| 型号： | BT151 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | THYRISTORS |
| 文件： | 总3页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BT151 Series
THYRISTORS
FEATURE
Glass passivated thyristors in a plastic TO220 package.
They are intended for use in applications requiring high
bidirectional blocking voltage capability and high thermal
cycling performance.
Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
VDRM
Ratings
Unit
BT151-500R BT151-650R BT151-800R
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
500
500
650
800
800
V
VRRM
IT(RMS)
IT(AV)
650
12
RMS on-state current
A
A
Average
current
on-state
7.5
Non-repetitive peak on-
state current
ITSM
100
A
PGM
Peak gate power
5
W
W
PG(AV)
Average gate power
0.5
Storage
range
Operating
temperature
temperature
Tstg
Tj
-45 to +150
110
°C
°C
junction
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
R∂j-mb
R∂JA
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
≤ 1.3
≤ 60
°C/W
26/09/2012
COMSET SEMICONDUCTORS
1 | 3
BT151 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VDRM
Ratings
Test Condition(s)
Min Typ Max Unit
BT151-500R
BT151-650R
BT151-800R
BT151-500R
BT151-650R
BT151-800R
500
650
800
500
650
800
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Repetitive peak
off-state voltage
V
Repetitive peak reverse
voltage
VRRM
-
IGT
VGT
IL
Gate trigger current
Gate trigger voltage
Latching current
Holding current
VD = 12 V; IT = 100 mA
15
1.5
40
20
mA
V
VD = 12 V; IT = 100 mA
VD = 12 V; IGT = 100 mA
VD = 12 V; IGT = 100 mA
-
-
-
mA
mA
IH
ID
Off-state current
VD = VDRM max; Tj = 125°C
-
-
0.5
mA
IR
Reverse current
On-state voltage
VR = VRRM max; Tj = 125°C
IT = 23 A
-
-
-
-
0.5
mA
V
VT
1.75
DYNAMIC CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
dVD/dt
Ratings
Test Condition(s)
Min Typ Max Unit
V
DM = 67% VDRMmax; Tj = 125°C
Exponential waveform; gate
open circuit
VDM = 67% VDRMmax; Tj = 125°C
Exponential waveform
GK = 100 Ω
ITM = 40 A; VD = VDRMmax
IG = 0.1 A; dIG/dt = 5 A/µs
VDM = 67% VDRMmax; Tj = 125°C
TM = 20 A; VR = 25 V
50
130
-
V/µs
Critical rate of rise of
off-state voltage
200 1000
-
-
V/µs
µs
R
Gate controlled
turn-on time
tgt
tq
-
-
2
I
R
Circuit commutated
Turn-off time
70
-
µs
GK = 100 Ω
dITM/dt = 30 A/µs
dVD/dt = 50 V/µS
26/09/2012
COMSET SEMICONDUCTORS
2 | 3
BT151 Series
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
26/09/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
相关型号：
©2020 ICPDF网 联系我们和版权申明