IRF640 [COMSET]
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS; N沟道增强型功率MOS晶体管
| 型号： | IRF640 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| 文件： | 总3页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF640
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in high speed power switching, low
voltage, relay drivers and general purpose switching
applications.
DC-DC & DC-AC converters for telecom, industrial and lighting
equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VDS
Drain-Source Voltage
Continuous Drain Current TC= 37°C
200
18
V
IDS
IDM
IAR
A
Pulsed Drain Current TC= 25°C
72
18
Avalanche Current, Limited by Tjmax
Avalanche Energy, Single pulse
ID = 18 A, VDD = 50 V, Tj = 25°C
Avalanche Energy, Periodic Limited by Tjmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature TC= 25°C
Operating Temperature
EAS
280
mJ
EAR
VGS
RDS(on)
PT
tJ
tstg
13
20
0.18
125
150
V
Ω
W
°C
Storage Temperature range
-55 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
1
Unit
RthJC
RthJA
°C/W
62.5
1/3
09/11/2012
COMSET SEMICONDUCTORS
IRF640
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min
Typ Max Unit
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
VDSS
VGS(th)
ID= 250 µA, VGS= 0 V
200
-
3
-
-
V
V
ID= 250 µA, VGS= VDS
VDS= 200 V, VGS= 0 V
Tj= 25 °C
VDS= 200 V, VGS= 0 V
Tj= 125 °C
2
-
4
25
Zero Gate Voltage Drain
Current
IDSS
µA
-
-
-
250
100
Gate-Source leakage
Current
Drain-Source on Resistance ID= 10 A, VGS= 10 V
IGSS
VGS= 20 V, VDS= 0 V
-
-
nA
RDS(on)
0.15 0.18
Ω
DYNAMIC CHARACTERISTICS
Test Condition(s)
Symbol
gfs
Ratings
Min Typ Max Unit
V
DS = 2*ID*RDS(on)max
ID= 9 A
Transconductance
7
11
-
S
CISS
COSS
Input Capacitance
Output Capacitance
Reverse transfer
Capacitance
-
-
1200 1560
VGS= 0 V, VDS= 25 V
f= 1MHz
200
60
260
80
pF
CRSS
-
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
-
-
-
-
20
50
VDD= 100 V,
ID= 18 A, RGS= 25 Ω
145
145
110
300
300
230
ns
REVERSE DIODE
Test Condition(s)
TC = 25°C
Symbol
Ratings
Min Typ Max Unit
Inverse Diode Continuous
Forward Current.
Inverse diode direct current,
pulsed.
Inverse Diode Forward
voltage
IS
-
-
-
-
-
-
18
72
2
A
V
ISM
VSD
TC = 25°C
VGS = 0 V, IF = 18 A
Trr
Reverse Recovery Time
Reverse Recovery Charge
VR = 25 V, IF = 18 A
-
-
130
0.8
-
-
ns
di/dt = 100 A/µs, TC =
150°C
Qrr
µC
2/3
09/11/2012
COMSET SEMICONDUCTORS
IRF640
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
Max.
A
B
C
D
E
F
9,90
10,30
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
G
H
L
M
N
P
R
S
T
0,46
2,50
4,98
2.49
0,70
U
Pin 1 :
Pin 2 :
Pin 3 :
Gate
Drain
Source
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
09/11/2012
info@comsetsemi.com
3/3
COMSET SEMICONDUCTORS
相关型号：
IRF640-001PBF
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF640-029PBF
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
VISHAY
IRF640A
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
IRF640BJ69Z
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明