C3M0120100J [CREE]
Silicon Carbide Power MOSFET C3M MOSFET Technology;
| 型号： | C3M0120100J |
| 厂家： | 
CREE, INC |
| 描述： | Silicon Carbide Power MOSFET C3M MOSFET Technology |
| 文件： | 总10页 (文件大小：1331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDS
ID
1000 V
22 A
@
25˚C
C3M0120100J
RDS(on)
120 mΩ
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
N-Channel Enhancement Mode
Features
Package
TAB
Drain
•ꢀ C3MTM SiC MOSFET technology
•ꢀ Low parasitic inductance with separate driver source pin
•ꢀ 7mm of creepage distance between drain and source
•ꢀ High blocking voltage with low On-resistance
•ꢀ Fast intrinsic diode with low reverse recovery (Qrr)
•ꢀ Low output capacitance (60pF)
•ꢀ Halogen free, RoHS compliant
Benefits
Drain
(TAB)
1
G
2
KS
3
S
4
S
5
S
6
S
7
S
•ꢀ Reduce switching losses and minimize gate ringing
•ꢀ Higherꢀsystemꢀefficiency
•ꢀ Reduce cooling requirements
•ꢀ Increase power density
Gate
(Pin 1)
•ꢀ Increase system switching frequency
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Applications
•ꢀ Renewable energy
•ꢀ EV battery chargers
•ꢀ High voltage DC/DC converters
•ꢀ Switch Mode Power Supplies
Marking
Part Number
Package
C3M0120100J
TO-263-7
C3M0120100J
Maximum Ratings (TCꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Drain - Source Voltage
Value
Unit
Test Conditions
Note
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
AC (f >1 Hz)
Static
1000
-8/+19
-4/+15
22
V
V
V
VDSmax
VGSmax
VGSop
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
Note: 1
Note: 2
Fig. 19
VGS = 15 V, TC =ꢀ25˚C
VGS = 15 V, TC =ꢀ100˚C
Continuous Drain Current
Pulsed Drain Current
A
A
ID
13.5
50
83
Fig. 22
Fig. 20
ID(pulse)
PD
Pulse width tP limited by Tjmax
Power Dissipation
W
˚C
˚C
TC=25˚C,ꢀT ꢀ=ꢀ150ꢀ˚C
J
-55 to
+150
Operating Junction and Storage Temperature
Solder Temperature
T , Tstg
J
260
1.6mm (0.063”) from case for 10s
TL
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
1
C3M0120100J Rev. -, 04-2017
Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Typ.
Symbol
Parameter
Min.
1000
1.8
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.1
1.6
1
3.5
VDS = VGS, ID = 3 mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 3 mA, TJ = 150ºC
VDS = 1000 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
155
μA
nA
10
120
170
7.7
6.7
VGS = 15 V, ID = 15 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
VGS = 15 V, ID = 15 A, TJ = 150ºC
VDS= 20 V, IDS= 15 A
gfs
S
Fig. 7
V
DS= 20 V, IDS= 15 A, TJ = 150ºC
Ciss
Coss
Crss
Eoss
Input Capacitance
350
40
3
Fig. 17,
18
VGS = 0 V, VDS = 600 V
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
pF
f = 1 MHz
AC
V
= 25 mV
9
μJ
μJ
Fig. 16
Fig. 26
EON
Turn-On Switching Energy (Body Diode FWD)
140
VDS = 700 V, VGS = -4 V/15 V, ID = 15A,
RG(ext) =ꢀ2.5Ω,ꢀL=ꢀ156ꢀμH,ꢀꢀTJ = 150ºC
EOFF
td(on)
tr
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
25
7
V
DD = 700 V, VGS = -4 V/15 V
Rise Time
8
ID = 15 A, RG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀ
Timing relative to VDS
Inductive load
Fig. 27,
28
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
14
8
,
RG(int)
Qgs
Qgd
Qg
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
16
Ω
f = 1 MHz VAC = 25 mV
4.8
V
DS = 700 V, VGS = -4 V/15 V
10.0
21.5
ID = 15 A
nC
Fig. 12
Per IEC60747-8-4 pg 21
(T ꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.8
V
V
VGS = -4 V, ISD = 7.5 A
VGS = -4 V, ISD = 7.5 A, T = 150 °C
Fig. 8,
9, 10
VSD
Diode Forward Voltage
4.4
J
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
16.5
50
A
VGS = -4 V
Note 1
Note 1
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
16
ns
VGS = -4 V, ISD = 15 A, VR = 700 V
Note 1
Qrr
Irrm
Reverse Recovery Charge
154
15
nC
A
dif/dt = 2400 A/µs, T = 150 °C
J
Peak Reverse Recovery Current
Thermal Characteristics
Symbol
RθJC
Parameter
Max.
1.5
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
RθJA
Thermal Resistance From Junction to Ambient
40
2
C3M0120100J Rev. -, 04-2017
Typical Performance
45
45
40
35
30
25
20
15
10
5
VGS = 15 V
Conditions:
TJ = -55 °C
Conditions:
TJ = 25 °C
tp = < 200 µs
VGS = 15 V
40
tp = < 200 µs
35
VGS = 13 V
VGS = 13 V
VGS = 11 V
30
25
20
15
10
5
VGS = 11 V
VGS = 9 V
VGS = 9 V
VGS = 7 V
VGS = 7 V
0
0
0
2
4
6
8
10
11
0
2
4
6
8
10
11
Drain-Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
Figure 2. Output Characteristics TJ = 25 ºC
45
40
35
30
25
20
15
10
5
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 15 V
Conditions:
TJ = 150 °C
tp = < 200 µs
Conditions:
IDS = 15 A
VGS = 15 V
tp < 200 µs
VGS = 13 V
VGS = 11 V
VGS = 9 V
VGS = 7 V
0
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
11
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
Figure 3. Output Characteristics TJ = 150 ºC
Figure 4. Normalized On-Resistance vs. Temperature
300
275
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
Conditions:
IDS = 15 A
tp < 200 µs
Conditions:
VGS = 15 V
tp < 200 µs
TJ = 150 °C
TJ = -55 °C
TJ = 25 °C
VGS = 11 V
VGS = 13 V
VGS = 15 V
50
50
25
25
0
0
0
5
10
15
20
25
30
35
40
45
-50
-25
0
25
50
75
100
125
150
Drain-Source Current, IDS (A)
Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
3
C3M0120100J Rev. -, 04-2017
Typical Performance
35
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
0
30
25
20
15
10
5
tp < 200 µs
-5
TJ = 150 °C
VGS = -4 V
-10
-15
-20
-25
-30
-35
-40
-45
VGS = 0 V
TJ = 25 °C
TJ = -55 °C
VGS = -2 V
Conditions:
TJ = -55°C
tp < 200 µs
0
0
2
4
6
8
10
12
14
Drain-Source Voltage VDS (V)
Gate-SourceVoltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
-5
-5
V
GS = -4 V
VGS = -4 V
-10
-15
-20
-25
-30
-35
-40
-45
-10
VGS = 0 V
VGS = 0 V
-15
-20
-25
-30
-35
-40
-45
VGS = -2 V
VGS = -2 V
Conditions:
TJ = 150°C
tp < 200 µs
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
GS = VDS
IDS = 3 mA
Conditions:
V
I
DS = 15 A
IGS = 18 mA
V
DS = 700 V
12
8
TJ = 25 °C
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
4
8
12
16
20
24
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0120100J Rev. -, 04-2017
Typical Performance
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
0
VGS = 0 V
VGS = 0 V
-10
-20
-30
-40
-10
-20
-30
-40
VGS = 5 V
VGS = 5 V
VGS = 10 V
VGS = 10 V
VGS = 15 V
VGS = 15 V
Conditions:
TJ = -55 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
25
20
15
10
5
-6
-5
-4
-3
-2
-1
0
0
VGS = 0 V
-10
-20
-30
-40
VGS = 5 V
VGS = 10 V
VGS = 15 V
Conditions:
TJ = 150 °C
tp < 200 µs
0
0
200
400
600
800
1000
1200
Drain to Source Voltage, VDS (V)
Drain-Source Voltage VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 16. Output Capacitor Stored Energy
1000
1000
100
10
Conditions:
TJ = 25 °C
Conditions:
TJ = 25 °C
Ciss
Ciss
VAC = 25 mV
V
AC = 25 mV
f = 1 MHz
f = 1 MHz
Coss
100
10
1
Coss
Crss
Crss
1
0
50
100
Drain-Source Voltage, VDS (V)
150
200
0
200
400
600
800
1000
Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
5
C3M0120100J Rev. -, 04-2017
Typical Performance
25
90
80
70
60
50
40
30
20
10
0
Conditions:
TJ ≤ 150 °C
Conditions:
TJ ≤ 150 °C
20
15
10
5
0
-55
-30
-5
20
45
70
95
120
145
-55
-30
-5
20
45
70
95
120
145
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
1
10 µs
0.5
0.3
Limited by RDS On
100 µs
10.00
1 ms
100 ms
0.1
1.00
0.10
0.01
0.05
100E-3
0.02
Conditions:
TC = 25 °C
D = 0,
SinglePulse
0.01
Parameter: tp
10E-3
1E-6
0.1
1
10
100
1000
10E-6
100E-6
1E-3
10E-3
100E-3
1
Drain-Source Voltage, VDS (V)
Time, t (s)
p
Figure 21. Transient Thermal Impedance
(Junction - Case)
Figure 22. Safe Operating Area
150
125
100
75
250
Conditions:
TJ = 25 °C
VDD = 500 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0120100J
L = 156 μH
Conditions:
TJ = 25 °C
VDD = 700 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0120100J
L = 156 μH
200
150
100
50
ETotal
ETotal
EOn
EOn
50
25
EOff
EOff
0
0
0
5
10
15
20
25
0
5
10
15
20
25
Drain to Source Current, IDS (A)
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 500V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 700V)
6
C3M0120100J Rev. -, 04-2017
Typical Performance
300
250
200
150
100
50
Conditions:
IDS = 20 A
VDD = 700 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0120100J
L = 156 μH
Conditions:
TJ = 25 °C
VDD = 700 V
IDS = 15 A
VGS = -4V/+15 V
FWD = C3M0120100J
L = 156 μH
250
ETotal
200
150
100
50
ETotal
EOn
EOn
EOff
EOff
0
0
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
35
Conditions:
TJ = 25 °C
VDD = 700 V
IDS = 15 A
VGS = -4V/+15 V
FWD = C3M0120100J
L = 156 μH
30
25
20
15
10
5
td(off)
td(on)
tr
tf
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
7
C3M0120100J Rev. -, 04-2017
Test Circuit Schematic
RG
Q1
L
VGS= - 4 V
KS
VDC
CDC
Q2
RG
D.U.T
KS
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
8
C3M0120100J Rev. -, 04-2017
Package Dimensions
Package 7L D2PAK
All Dimensions in Millimeters
Dim
Min
4.300
0.00
typ
4.435
0.125
0.600
0.800
0.490
1.285
9.075
4.800
10.180
7.550
7.223
1.27
Max
4.570
0.25
A
A1
b
0.500
0.600
0.330
1.170
9.025
4.700
10.130
6.500
6.778
0.700
1.000
0.650
1.400
9.125
4.900
10.230
8.600
7.665
b2
c
C2
D
D1
E
E1
E2
e
H
15.043
2.324
0.968
0˚
16.178
2.512
1.418
4˚
17.313
2.700
1.868
8˚
L
L1
Ø
Ø1
4.5˚
5˚
5.5˚
9
C3M0120100J Rev. -, 04-2017
Notes
•ꢀ RoHSꢀCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
•ꢀ REAChꢀCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
toꢀequipmentꢀusedꢀinꢀtheꢀoperationꢀofꢀnuclearꢀfacilities,ꢀlife-supportꢀmachines,ꢀcardiacꢀdefibrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀ
equipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀsystems,ꢀairꢀtrafficꢀcontrolꢀsystems.
Related Links
•ꢀ SPICE Models: http://wolfspeed.com/power/tools-and-support
•ꢀ SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
•ꢀ SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2016 - 2017 Cree, Inc. All rights reserved.
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.wolfspeed.com/power
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
C3M0120100J Rev. -, 04-2017
10
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