C3M0280090D [CREE]
Silicon Carbide Power MOSFET;
| 型号： | C3M0280090D |
| 厂家： | 
CREE, INC |
| 描述： | Silicon Carbide Power MOSFET |
| 文件： | 总10页 (文件大小：1197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDS
ID
RDS(on)
900 V
@
25˚C
11.5 A
280 mΩ
C3M0280090D
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
N-Channel Enhancement Mode
Features
Package
•ꢀ New C3M SiC MOSFET technology
•ꢀ High blocking voltage with low On-resistance
•ꢀ High speed switching with low capacitances
•ꢀ Fast intrinsic diode with low reverse recovery (Qrr)
•ꢀ Halogen free, RoHS compliant
Benefits
•ꢀ Higherꢀsystemꢀefficiency
•ꢀ Reduced cooling requirements
•ꢀ Increased power density
•ꢀ Increased system switching frequency
Applications
•ꢀ Renewable energy
•ꢀ Lighting
•ꢀ High voltage DC/DC converters
•ꢀ Telecom Power Supplies
•ꢀ Induction Heating
Part Number
Package
TO-247-3
C3M0280090D
Maximum Ratings (TCꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Drain - Source Voltage
Value
Unit
Test Conditions
Note
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
900
-8/+18
-4/+15
11.5
V
V
V
VDSmax
VGSmax
VGSop
Gate - Source Voltage
Gate - Source Voltage
Absolute maximum values
Recommended operational values
Note 1
Fig. 19
VGS = 15 V, TC =ꢀ25˚C
VGS = 15 V, TC =ꢀ100˚C
Continuous Drain Current
Pulsed Drain Current
A
A
ID
7.5
22
54
Fig. 22
Fig. 20
ID(pulse)
PD
Pulse width tP limited by Tjmax
Power Dissipation
W
˚C
˚C
TC=25˚C,ꢀT ꢀ=ꢀ150ꢀ˚C
J
-55 to
+150
Operating Junction and Storage Temperature
Solder Temperature
T , Tstg
J
260
1.6mm (0.063”) from case for 10s
TL
Note (1): MOSFET can also safely operate at 0/+15 V
1
C3M0280090D Rev. - , 11-2015
Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Min.
900
1.8
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.1
1.6
1
3.5
VDS = VGS, ID = 1.2 mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 1.2 mA, TJ = 150ºC
VDS = 900 V, VGS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
360
μA
nA
10
VGS = 15 V, VDS = 0 V
280
385
3.6
3.1
VGS = 15 V, ID = 7.5 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
VGS = 15 V, ID = 7.5 A, TJ = 150ºC
VDS= 15 V, IDS= 7.5 A
gfs
S
Fig. 7
VDS= 15 V, IDS= 7.5 A, TJ = 150ºC
Ciss
Coss
Crss
Eoss
Input Capacitance
150
20
2
Fig. 17,
18
VGS = 0 V, VDS = 600 V
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
pF
f = 1 MHz
AC
V
= 25 mV
4.5
μJ
μJ
Fig. 16
Fig. 26,
29
Note(3)
EON
Turn-On Switching Energy
57
VDS = 400 V, VGS = -4 V/15 V, ID = 7.5 A,
RG(ext) =ꢀ2.5Ω,ꢀL=ꢀ220ꢀμH,ꢀꢀTJ = 150ºC
EOFF
td(on)
tr
Turn Off Switching Energy
Turn-On Delay Time
Rise Time
6
26
10
VDD = 400 V, VGS = -4 V/15 V
ID = 7.5 A, RG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀ
Timing relative to VDS
Inductive load
Fig. 27,
29
Note(3)
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
17.5
7.5
,
RG(int)
Qgs
Qgd
Qg
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
26
2.8
3.4
9.5
Ω
f = 1 MHz VAC = 25 mV
VDS = 400 V, VGS = -4 V/15 V
ID = 7.5 A
nC
Fig. 12
Per IEC60747-8-4 pg 21
(T ꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.8
V
V
VGS = -4 V, ISD = 4 A
Fig. 8,
9, 10
VSD
Diode Forward Voltage
4.4
20
VGS = -4 V, ISD = 4 A, T = 150 °C
J
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
16.5
22
A
VGS = -4 V
Note 2
Note 2
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
ns
VGS = -4 V, ISD = 4 A, VR = 400 V
Note 2
Qrr
Irrm
Reverse Recovery Charge
47
nC
A
dif/dt = 600 A/µs, T = 150 °C
J
Peak Reverse Recovery Current
3.4
Note (2): When using SiC Body Diode the maximum recommended VGS = -4V
Thermal Characteristics
Symbol
RθJC
Parameter
Max.
2.3
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
°C/W
Fig. 21
RθJA
40
2
C3M0280090D Rev. - , 11-2015
Typical Performance
20
20
18
16
14
12
10
8
VGS = 15 V
Conditions:
TJ = -55 °C
Conditions:
TJ = 25 °C
tp = < 200 µs
VGS = 15 V
18
VGS = 13 V
tp = < 200 µs
16
VGS = 13 V
14
12
10
8
VGS = 11 V
VGS = 9 V
VGS = 11 V
VGS = 9 V
6
6
VGS = 7 V
VGS = 7 V
4
4
2
2
0
0
0
2
4
6
8
10
0
2
4
6
8
10
Drain-Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
Figure 2. Output Characteristics TJ = 25 ºC
20
18
16
14
12
10
8
2.5
2.0
1.5
1.0
0.5
0.0
Conditions:
TJ = 150 °C
tp = < 200 µs
Conditions:
IDS = 7 A
VGS = 15 V
tp < 200 µs
VGS = 15 V
VGS = 13 V
VGS = 11 V
VGS = 9 V
6
VGS = 7 V
4
2
0
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
Figure 3. Output Characteristics TJ = 150 ºC
Figure 4. Normalized On-Resistance vs. Temperature
600
550
500
450
400
350
300
250
200
150
100
50
600
500
400
300
200
100
0
Conditions:
IDS = 7 A
tp < 200 µs
Conditions:
VGS = 15 V
tp < 200 µs
VGS = 11 V
VGS = 13 V
TJ = 150 °C
TJ = -55 °C
TJ = 25 °C
VGS = 15 V
0
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
Drain-Source Current, IDS (A)
Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
3
C3M0280090D Rev. - , 11-2015
Typical Performance
15
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
tp < 200 µs
0
TJ = 150 °C
VGS = -4 V
-5
10
TJ = 25 °C
VGS = 0 V
TJ = -55 °C
VGS = -2 V
-10
-15
-20
5
0
Conditions:
TJ = -55°C
tp < 200 µs
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
Drain-Source Voltage VDS (V)
Gate-SourceVoltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
VGS = -4 V
VGS = -4 V
-5
VGS = 0 V
-5
VGS = 0 V
VGS = -2 V
VGS = -2 V
-10
-15
-20
-10
-15
-20
Conditions:
TJ = 150°C
tp < 200 µs
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
GS = VDS
IDS = 1.2 mA
Conditions:
V
I
I
DS = 7.5 A
GS = 10 mA
12
8
VDS = 400 V
TJ = 25 °C
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0280090D Rev. - , 11-2015
Typical Performance
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
0
VGS = 0 V
VGS = 0 V
-5
-5
VGS = 5 V
VGS = 5 V
VGS = 10 V
VGS = 10 V
-10
-15
-20
-10
-15
-20
VGS = 15 V
VGS = 15 V
Conditions:
TJ = -55 °C
tp < 200 µs
Conditions:
TJ = 25 °C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
10
8
-6
-5
-4
-3
-2
-1
0
0
VGS = 0 V
-5
6
VGS = 5 V
VGS = 10 V
VGS = 15 V
-10
-15
-20
4
2
Conditions:
TJ = 150 °C
tp < 200 µs
0
0
100
200
300
400
500
600
700
800
900 1000
Drain to Source Voltage, VDS (V)
Drain-Source Voltage VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 16. Output Capacitor Stored Energy
1000
1000
100
10
Conditions:
TJ = 25 °C
Conditions:
TJ = 25 °C
VAC = 25 mV
VAC = 25 mV
f = 1 MHz
f = 1 MHz
Ciss
Ciss
100
10
1
Coss
Coss
Crss
Crss
1
0
50
100
Drain-Source Voltage, VDS (V)
150
200
0
100
200
300
400
500
600
700
800
900
Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 900V)
5
C3M0280090D Rev. - , 11-2015
Typical Performance
12
60
50
40
30
20
10
0
Conditions:
TJ ≤ 150 °C
Conditions:
TJ ≤ 150 °C
10
8
6
4
2
0
-55
-30
-5
20
45
70
95
120
145
-55
-30
-5
20
45
70
95
120
145
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
10 µs
0.5
0.3
10.00
Limited by RDS On
1
100 µs
1 ms
0.1
100 ms
1.00
0.10
0.01
0.05
100E-3
0.02
Conditions:
TC = 25 °C
D = 0,
0.01
SinglePulse
Parameter: tp
10E-3
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
Drain-Source Voltage, VDS (V)
Figure 21. Transient Thermal Impedance
(Junction - Case)
Figure 22. Safe Operating Area
300
250
200
150
100
50
180
Conditions:
TJ = 25 °C
Conditions:
TJ = 25 °C
160
140
120
100
80
V
R
V
DD = 600 V
G(ext) = 2.5 Ω
GS = -4V/+15 V
V
R
V
DD = 400 V
G(ext) = 2.5 Ω
GS = -4V/+15 V
FWD = C3M0280090D
L = 220 μH
FWD = C3M0280090D
L = 220 μH
ETotal
ETotal
EOn
EOn
60
40
EOff
20
EOff
12
0
0
0
2
4
6
8
10
14
16
0
2
4
6
8
10
12
14
16
Drain to Source Current,IDS (A)
Drain to Source Current,IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 400V)
6
C3M0280090D Rev. - , 11-2015
Typical Performance
100
100
80
60
40
20
0
Conditions:
TJ = 25 °C
Conditions:
DS = 7.5 A
I
V
I
V
DD = 400 V
DS = 7.5 A
GS = -4V/+15 V
V
R
V
DD = 400 V
G(ext) = 2.5 Ω
GS = -4V/+15 V
80
60
40
20
0
ETotal
FWD = C3M0280090D
L = 220 μH
FWD = C3M0280090D
L = 220 μH
ETotal
EOn
EOn
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
45
Conditions:
TJ = 25 °C
40
35
30
25
20
15
10
5
V
I
V
DD = 400 V
DS = 7.5 A
GS = -4V/+15 V
FWD = C3M0280090D
L = 220 μH
td(on)
td(off)
tr
tf
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
7
C3M0280090D Rev. - , 11-2015
Test Circuit Schematic
Q1
RG
C3M0280090D
VGS= - 4V
VDC
Q2
RG
C3M0280090D
D.U.T
Figure 29. Clamped Inductive Switching Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
8
C3M0280090D Rev. - , 11-2015
Package Dimensions
Inches
Millimeters
Min
POS
Package TO-247-3
Min
.190
.090
.075
.042
.075
.075
.113
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
Max
.205
.100
.085
.052
.095
.085
.133
.123
.027
.831
.695
.049
.635
.557
.201
.075
.529
Max
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
A
A1
A2
b
4.83
2.29
1.91
1.07
1.91
1.91
2.87
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
1.00
12.38
b1
b2
b3
b4
c
D
D1
D2
E
E1
E2
E3
E4
e
.214 BSC
3
5.44 BSC
N
3
L
.780
.800
.173
.144
.236
.248
11˚
11˚
8˚
19.81
4.10
3.51
5.49
6.04
9˚
20.32
4.40
3.65
6.00
6.30
11˚
11˚
8˚
Pinout Information:
T
U
L1
ØP
Q
.161
.138
.216
.238
9˚
•ꢀ Pin 1 = Gate
•ꢀ Pin 2, 4 = Drain
•ꢀ Pin 3 = Source
S
V
W
T
U
9˚
9˚
V
2˚
2˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
TO-247-3
9
C3M0280090D Rev. - , 11-2015
Notes
•ꢀ RoHSꢀCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
•ꢀ REAChꢀCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
toꢀequipmentꢀusedꢀinꢀtheꢀoperationꢀofꢀnuclearꢀfacilities,ꢀlife-supportꢀmachines,ꢀcardiacꢀdefibrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀ
equipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀsystems,ꢀairꢀtrafficꢀcontrolꢀsystems.
Related Links
•ꢀ C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support
•ꢀ SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
•ꢀ SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2015 Cree, Inc. All rights reserved.
USA Tel: +1.919.313.5300
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Fax: +1.919.313.5451
www.cree.com/power
C3M0280090D Rev. -, 11-2015
10
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