C460MB290-S0100-PLUS [CREE]
Visible LED;
| 型号： | C460MB290-S0100-PLUS |
| 厂家： | 
CREE, INC |
| 描述： | Visible LED 光电 |
| 文件： | 总4页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
•
G SiC Technology
MegaBright® Plus LEDs
CxxxMB290-S0100-Plus
Features
Applications
• MegaBright® Plus Performance
• Outdoor LED Video Displays
• Automotive Dashboard Lighting
• White LEDs
– 12.0mW min Blue
• Single Wire Bond Structure
• Class II ESD Rating
• Backlighting
Description
Cree's MB Plus series of MegaBright® Plus LEDs combine highly efficient InGaN materials with
Cree's proprietary G•SiC® substrate to deliver superior price/performance for high intensity blue LEDs.
These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction
efficiency, and require only a single wire bond connection. Sorted Die Kits provide die sheets
conveniently sorted into wavelength and radiant flux bins. Cree's MB series chips are tested for
conformity to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs
are useful in a broad range of applications such as outdoor full motion LED video signs, automotive
lighting and white LEDs, yet can also be used in high volume applications such as LCD backlighting.
Cree's MB series chips are compatible with most radial and SMT LED assembly processes.
CxxxMB290-S0100-Plus Chip Diagram
Topside View
Bottom View
Die Cross Section
G • SiC® LED Chip
300 x 300 µm
Anode (+)
InGaN
Mesa (junction)
240 x 240 µm
SiC Substrate
Backside
Metallization
Gold Bond Pad
115 µm Diameter
Cathode (-)
CPR3BS Rev. A
© 2003-2004 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
MegaBright® Plus LEDs
CxxxMB290-S0100-Plus
Maximum Ratings at TA = 25°C Notes 1&3
DC Forward Current
CxxxMB290-S0100-Plus
30mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
100mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
-40°C to +100°C
-40°C to +100°C
1000 V
Storage Temperature Range
Electrostatic Discharge Threshold (HBM) Note 2
Electrostatic Discharge Classification (MIL-STD-883E) Note 2
Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA Note 3
Forward Voltage
(Vf, V)
Reverse Current
[I(Vr=5V), µA]
Peak Wavelength
Full Width Half Max
Part Number
(λp, nm)
(λD, nm)
Min Typ Max
Max
Typ
Typ
C460MB290-S0100-Plus
C470 MB290-S0100-Plus
3.0
3.0
3.5
3.5
3.8
3.8
10
10
458
468
21
22
Mechanical Specifications
Description
CxxxMB290-S0100-Plus
Dimension
240 x 240
300 x 300
200 x 200
250
Tolerance
± 25
P-N Junction Area (µm)
Top Area (µm)
± 25
Bottom Area (µm)
± 25
Chip Thickness (µm)
Au Bond Pad Diameter (µm)
Au Bond Pad Thickness (µm)
± 25
115
± 20
1.2
± 0.5
± 10
Back Contact Metal Width (µm)
20
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for
characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED
junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be
characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2) Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD
classification of Class II is based on sample testing according to MIL-STD 883E.
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages
(with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
4) Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80µm.
5) Specifications are subject to change without notice.
CPR3BS Rev. A
© 2003-2004 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
MegaBright® Plus LEDs
CxxxMB290-S0100-Plus
Standard Bins for Cxxx-MB290-S0100-Plus:
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only
one bin. Sorted die kit (CxxxMB290-S0100-Plus) orders may be filled with any or all bins (CxxxMB290-01xx) contained in
the kit.
C460MB290-S0100-Plus
C460MB290-0105
C460MB290-0106
12.0mW
455nm
460nm
Dominant Wavelength
465nm
C470MB290-S0100-Plus
C470MB290-0107
C470MB290-0108
C470MB290-0109
12.0mW
465nm
470nm
472nm
475nm
Dominant Wavelength
CPR3BS Rev. A
© 2003-2004 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
MegaBright® Plus LEDs
CxxxMB290-S0100-Plus
Characteristic Curves:
These are representative measurements for blue MegaBright products. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Forward Current vs Forward Voltage
Wavelength Shift vs Forward Current
30
25
20
15
10
5
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-2.0
-4.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5
10
15
20
25
30
Vf (V)
If (mA)
Relative Intensity vs Peak Wavelength
Relative Intensity vs Forward Current
100
80
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
60
40
20
0
5
10
15
If (mA)
20
25
30
500
400
600
Wavelength (nm)
CPR3BS Rev. A
© 2003-2004 Cree, Inc. All Rights Reserved.
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